PNP bipolar transistors

NPN-Transistor, PCB soldering, TO-3, TO-204AA, 120V, 15A. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: high voltage PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ15016G. Cutoff frequency ft [MHz]: 18 MHz. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3, 200V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 200V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Pd (Power Dissipation, Max): 250W. Spec info: complementary transistor (pair) MJ15022. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 350V

NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3, 200V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 200V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ15022. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 350V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3, 250V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 280pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ15024. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN-Transistor, 250V, 16A, -250V, -16A. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 16A. Collector-Emitter Voltage VCEO: -250V. Collector current: -16A. Number of terminals: 3. Manufacturer's marking: MJ15025G. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Type of transistor: Power Transistor. Polarity: PNP. Power: 250W. Max frequency: 4 MHz

NPN-Transistor, PCB soldering, TO-3, TO-204AA, 250V, 16A. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 16A. RoHS: yes. Component family: high voltage PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ21193G. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3 ( TO-204AA ), 250V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204AA ). Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 4pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ21196. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V

NPN-Transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 70V. BE diode: no. Cost): 4pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Switching and Amplifier Applications. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 2. Pd (Power Dissipation, Max): 115W. Spec info: complementary transistor (pair) 2N3055. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Vebo: 7V

NPN-Transistor, PCB soldering, TO-3, TO-204AA, 60V, 15A. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ2955G. Cutoff frequency ft [MHz]: 2.5 MHz. Maximum dissipation Ptot [W]: 115W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN-Transistor, -100V, -6A, I-PAK. Collector-Emitter Voltage VCEO: -100V. Collector current: -6A. Housing: I-PAK. Type of transistor: Power Transistor. Polarity: PNP. Power: 20W. Max frequency: 3MHz

NPN-Transistor, PCB soldering (SMD), D-PAK, TO-252, 80V, 8A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J45H11. Cutoff frequency ft [MHz]: 90 MHz. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 8A, TO-220, TO-220, 150V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) MJE15031. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 8A, TO-220, TO-220AB, 150V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 150V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) MJE15030G. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Resistor B: Power Transistor. BE resistor: -150V. C(in): -8A. Cost): 50W

NPN-Transistor, -250V, -8A, TO-220. Collector-Emitter Voltage VCEO: -250V. Collector current: -8A. Housing: TO-220. Type of transistor: Power Transistor. Polarity: PNP. Power: 50W. Max frequency: 30MHz

NPN-Transistor, TO-220, 8A, TO-220AB, 250V. Housing: TO-220. Collector current: 8A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 250V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): TO-220. Cost): 2pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 50. Minimum hFE gain: 10. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) MJE15032. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 4A, TO-220, TO-220AB, 350V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 350V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 100. Minimum hFE gain: 10. Ic(pulse): 8A. Note: complementary transistor (pair) MJE15034G. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: hFE=100 (Min) @ IC=0.5Adc. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V. Collector current: 5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 120pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Pd (Power Dissipation, Max): 15W. Spec info: complementary transistor (pair) MJE200. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Vebo: 8V

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-225, 100V, -100V, -4A, TO-126. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Housing: TO-126. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Spec info: complementary transistor (pair) MJE243. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Type of transistor: Power Transistor. Polarity: PNP. Power: 15W. Max frequency: 40 MHz

NPN-Transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. RoHS: yes. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. Spec info: complementary transistor (pair) MJE3055T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Vebo: 5V. Resistor B: Power Transistor. BE resistor: -70V. C(in): -10A. Cost): 90W

NPN-Transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: for Hi-fi audio amplifiers and switching regulators. Max hFE gain: 100. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: complementary transistor (pair) MJE3055T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-220, TO-220, 60V, 10A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 10A. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE2955TG. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, 300V, 500mA, TO-126 (TO-225, SOT-32), TO-126, 300V, -300V, -0.5A, TO-126. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Collector-Emitter Voltage VCEO: -300V. Collector current: -0.5A. Housing: TO-126. Number of terminals: 3. Manufacturer's marking: MJE350. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Spec info: complementary transistor (pair) MJE340. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Vebo: 3V. Type of transistor: Power Transistor. Polarity: PNP. Power: 20.8W

NPN-Transistor, 0.5A, TO-126 (TO-225, SOT-32), TO-225, 300V. Collector current: 0.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. BE diode: no. C(in): 7pF. Cost): 110pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE340. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vebo: 3V

NPN-Transistor, 0.5A, TO-126F, TO-225, 300V. Collector current: 0.5A. Housing: TO-126F. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 30. Note: plastic housing. Number of terminals: 3. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE340. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 3V

NPN-Transistor, 300V, 500mA, -300V, -0.5A, TO-126. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Collector-Emitter Voltage VCEO: -300V. Collector current: -0.5A. Housing: TO-126. Manufacturer's marking: MJE350G. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Type of transistor: Power Transistor. Polarity: PNP. Power: 20W. Max frequency: 10MHz