Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.24$ | 1.34$ |
5 - 9 | 1.18$ | 1.28$ |
10 - 24 | 1.12$ | 1.21$ |
25 - 32 | 1.06$ | 1.15$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.24$ | 1.34$ |
5 - 9 | 1.18$ | 1.28$ |
10 - 24 | 1.12$ | 1.21$ |
25 - 32 | 1.06$ | 1.15$ |
RG2Y. Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): D2A ( 4.0x7.2mm ). VRRM: 70V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Ultra Fast Recovery Rectifier Diode. Note: SAMSUNG. MRI (max): 2.5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Weight: 0.6g. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V. Spec info: IFMS 50Ap. Quantity in stock updated on 28/04/2025, 20:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.