S1M, DO-214, DO-214AC, 1000V, 1A, 1A, 1A, 30A, SMA DO214AC. Housing: DO-214. Housing (JEDEC standard): DO-214AC. VRRM: 1000V. Average Rectified Current per Diode: 1A. Forward current (AV): 1A. Forward current [A]: 1A. IFSM: 30A. Housing (according to data sheet): SMA DO214AC. Assembly/installation: surface-mounted component (SMD). Cj: 12pF. Close voltage (repetitive) Vrrm [V]: 1 kV. Component family: Surface mounted rectifier diode (SMD). Conduction voltage (threshold voltage): 1.1V. Configuration: surface-mounted component (SMD). Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: rectifier diode. Driving current: 6A. Forward Voltage (Max): <1.1V / 1A. Forward voltage Vf (min): 1.1V. Function: general purpose rectifier diodes. Ifsm [A]: 32A. Information: -. Leakage current on closing Ir [A]: 5uA..50uA. Leakage current: 5uA. MSL: -. Marking on the case: 1M. Max reverse voltage: 1kV. Max temperature: +150°C.. Mounting Type: SMD. Note: housing 4.6x2.7mm. Number of terminals: 2. Number of terminals: 2. Operating temperature: -55...+155°C. Pulse current max.: 30A. Quantity per case: 1. Reaction time: 1.5us. Reverse Leakage Current: <50uA / 1000V. Reverse Recovery Time (Max): 1500ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Series: S1. Spec info: IFSM--30Ap t=10mS. Switching speed (regeneration time) tr [sec.]: -. Threshold voltage Vf (max): 1.1V. Trr Diode (Min.): 1.8us. [V]: 1.1V @ 1A. Original product from manufacturer: Taiwan Semiconductor. Minimum quantity: 10. Quantity in stock updated on 12/11/2025, 22:14