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Semiconductors Transistors FET and MOSFET transistors

P-channel transistor, 3.4A, 3.4A, 250V - SFS9634

P-channel transistor, 3.4A, 3.4A, 250V - SFS9634
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Quantity excl. VAT VAT incl.
1 - 4 3.20$ 3.46$
5 - 9 3.04$ 3.29$
10 - 24 2.88$ 3.11$
25 - 49 2.72$ 2.94$
50 - 99 2.66$ 2.88$
100 - 236 2.59$ 2.80$
Quantity U.P
1 - 4 3.20$ 3.46$
5 - 9 3.04$ 3.29$
10 - 24 2.88$ 3.11$
25 - 49 2.72$ 2.94$
50 - 99 2.66$ 2.88$
100 - 236 2.59$ 2.80$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 236
Set of 1

P-channel transistor, 3.4A, 3.4A, 250V - SFS9634. P-channel transistor, 3.4A, 3.4A, 250V. ID (T=25°C): 3.4A. Idss (max): 3.4A. Voltage Vds(max): 250V. Channel type: P. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 2.6A. Pd (Power Dissipation, Max): 33W. On-resistance Rds On: 1.3 Ohms. Technology: V-MOS TO220F. Quantity per case: 1. Note: On 13ns, Off 40ns. Quantity in stock updated on 29/04/2025, 12:25.

Technical documentation

Equivalent products :

Quantity in stock : 16
IRFI9634G

IRFI9634G

P-channel transistor, 4.1A, 4.1A, TO-220FP, TO-220F, 250V. ID (T=25°C): 4.1A. Idss (max): 4.1A. Hou...
IRFI9634G
P-channel transistor, 4.1A, 4.1A, TO-220FP, TO-220F, 250V. ID (T=25°C): 4.1A. Idss (max): 4.1A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 250V. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. ID (T=100°C): 2.6A. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 1 Ohm. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Function: td(on) 12ns, td(off) 34ns
IRFI9634G
P-channel transistor, 4.1A, 4.1A, TO-220FP, TO-220F, 250V. ID (T=25°C): 4.1A. Idss (max): 4.1A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 250V. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. ID (T=100°C): 2.6A. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 1 Ohm. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Function: td(on) 12ns, td(off) 34ns
Set of 1
4.89$ VAT incl.
(4.52$ excl. VAT)
4.89$
Quantity in stock : 5
2SJ449

2SJ449

P-channel transistor, 6A, 100uA, TO-220FP, TO-220FP, 250V. ID (T=25°C): 6A. Idss (max): 100uA. Hous...
2SJ449
P-channel transistor, 6A, 100uA, TO-220FP, TO-220FP, 250V. ID (T=25°C): 6A. Idss (max): 100uA. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 250V. C(in): 1040pF. Cost): 360pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: SWITCHING, POWER MOS FET. Id(imp): 24A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.55 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 24 ns. Technology: P-CHANNEL POWER MOS FET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 4 v. Drain-source protection : yes. G-S Protection: no
2SJ449
P-channel transistor, 6A, 100uA, TO-220FP, TO-220FP, 250V. ID (T=25°C): 6A. Idss (max): 100uA. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 250V. C(in): 1040pF. Cost): 360pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: SWITCHING, POWER MOS FET. Id(imp): 24A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.55 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 24 ns. Technology: P-CHANNEL POWER MOS FET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 4 v. Drain-source protection : yes. G-S Protection: no
Set of 1
3.82$ VAT incl.
(3.53$ excl. VAT)
3.82$

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