Zener diodes

Housing: PCB soldering. Housing: DO-41. Housing (JEDEC standard): DO-204AC. Zener breakdown voltage Uz [V], nom.: 56V. Maximum dissipation Ptot [W]: 2W. RoHS: yes. Component family: Zener diode, power 2W (25°C), 5%, ZY series. Configuration: PCB through-hole mounting. Number of terminals: 2. Leakage current on closing Ir [A] @ Ur [V]: 1uA @ 28V. Zener Impedance Zzt[Ohm] @ Iz[A]: 25 Ohms @ 10mA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Housing: DO-41. Zener voltage: 6.2V. Pd (Power Dissipation, Max): 2W. Housing (according to data sheet): DO-41 ( 2.6x5.1mm ). RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Number of terminals: 2. Spec info: 60W t<10ms TA=25°C peak power dissipation. Assembly/installation: PCB through-hole mounting. Technology: Silicon-Power-Z-Diode (non-planar technology). Tolerance: 5%. Operating temperature: -50...+150°C

Pd (Power Dissipation, Max): 2W. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.6x5.1mm ). Zener voltage: 6.2V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Spec info: 60W t<10ms TA=25°C peak power dissipation. Assembly/installation: PCB through-hole mounting. Technology: Silicon-Power-Z-Diode (non-planar technology). Tolerance: 5%. Operating temperature: -50...+150°C. VRRM: 6.2V

Housing: DO-41. Zener voltage: 8.2V. Pd (Power Dissipation, Max): 2W. Housing (according to data sheet): DO-41 ( 2.6x5.1mm ). VRRM: 8.2V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Spec info: 60W t<10ms TA=25°C peak power dissipation. Assembly/installation: PCB through-hole mounting. Technology: Silicon-Power-Z-Diode (non-planar technology). Tolerance: 5%. Operating temperature: -50...+150°C

Pd (Power Dissipation, Max): 2W. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.6x5.1mm ). Zener voltage: 9.1V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Spec info: 60W t<10ms TA=25°C peak power dissipation. Assembly/installation: PCB through-hole mounting. Technology: Silicon-Power-Z-Diode (non-planar technology). Tolerance: 5%. Operating temperature: -50...+150°C. VRRM: 9.1V