Zener diodes

Zener voltage: 15V. Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Quantity per case: 1. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5245B, BZX79C15, ZPD15. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 16V. Conditioning: roll. Conditioning unit: 10000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5246B, BZX79C16, ZPD16. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 18V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Forward current (AV): 250mA. Equivalents: 1N5248B, BZX55C15, ZPD18. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%. Operating temperature: -65...+200°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.9V

Zener voltage: 20V. Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Equivalents: 1N968BRL, 1N5250B, BZX79C20, ZPD20. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 22V. Conditioning unit: 10000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. MRI (max): 2uA. MRI (min): 0.1uA. Equivalents: 1N5251B, BZX79C22, ZPD22. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 24V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Equivalents: 1N5252B, BZX55C24, ZPD24. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 27V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: 'Glass Silicon Zener Diode'. MRI (max): 0.1uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 2.4V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Equivalents: 1N5221B, BZX79C2V4, ZPD2.4. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 2.7V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 30 v. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5256B, BZX55C30, ZPD30. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Zener voltage: 33V. Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5257B, BZX79C33, ZPD33. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 36V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: BZX79-C36, ZPD36, BZX55C36. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 3V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 3.3V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5226B, BZX79C3V3, ZPD3.3. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 3.6V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5227B, BZX79C3V6, ZPD3.6. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 3.9V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5228B, BZX79C3V9, ZPD3.9. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Zener voltage: 43V. Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 47V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 4.3V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5229B, BZX79C4V3, ZPD4.3. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Zener voltage: 4.7V. Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5230B, BZX79C4V7, ZPD4.7. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 51V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 5.1V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. MRI (max): 0.1uA. Equivalents: 1N5231B, BZX79C5V1, ZPD5.1. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 5.6V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5232B, BZX79C5V6, ZPD5.6. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 62V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 6.2V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. MRI (max): 0.1uA. Equivalents: 1N5234B, BZX79C6V2, ZPD6.2. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V