Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.66$ | 0.71$ |
5 - 9 | 0.63$ | 0.68$ |
10 - 24 | 0.60$ | 0.65$ |
25 - 49 | 0.50$ | 0.54$ |
50 - 99 | 0.47$ | 0.51$ |
100 - 149 | 0.44$ | 0.48$ |
150 - 431 | 0.41$ | 0.44$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 4 | 0.66$ | 0.71$ |
5 - 9 | 0.63$ | 0.68$ |
10 - 24 | 0.60$ | 0.65$ |
25 - 49 | 0.50$ | 0.54$ |
50 - 99 | 0.47$ | 0.51$ |
100 - 149 | 0.44$ | 0.48$ |
150 - 431 | 0.41$ | 0.44$ |
BAS16. Forward current (AV): 215mA. IFSM: 1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 100V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed switching diode. MRI (max): 0.5uA. MRI (min): 30nA. Marking on the case: A6W. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 715mV. Spec info: IFSM--1A (T=1ms), 4A (T=1us). Quantity in stock updated on 27/04/2025, 08:25.
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