Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.06$ | 1.15$ |
5 - 9 | 1.01$ | 1.09$ |
10 - 24 | 0.96$ | 1.04$ |
25 - 49 | 0.85$ | 0.92$ |
50 - 99 | 0.82$ | 0.89$ |
100 - 149 | 0.77$ | 0.83$ |
150 - 165 | 0.74$ | 0.80$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 4 | 1.06$ | 1.15$ |
5 - 9 | 1.01$ | 1.09$ |
10 - 24 | 0.96$ | 1.04$ |
25 - 49 | 0.85$ | 0.92$ |
50 - 99 | 0.82$ | 0.89$ |
100 - 149 | 0.77$ | 0.83$ |
150 - 165 | 0.74$ | 0.80$ |
BAS85. Forward current (AV): 0.2A. IFSM: 4A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. VRRM: 30 v. Cj: 10pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Glass Fast Switching Schottky Barrier Diodes. MRI (max): 2uA. Number of terminals: 2. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Spec info: IFSM--4A t=10ms. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V. Original product from manufacturer Taiwan Semicon. Quantity in stock updated on 15/06/2025, 16:25.
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