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Semiconductors Diodes Standard and Rectifier Diodes

BAS85-GS08

BAS85-GS08
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Quantity (Set of 5) excl. VAT VAT incl.
1 - 2 0.59$ 0.64$
3 - 4 0.56$ 0.61$
5 - 9 0.53$ 0.57$
10 - 19 0.52$ 0.56$
20 - 49 0.50$ 0.54$
50 - 99 0.48$ 0.52$
100 - 789 0.46$ 0.50$
Quantity (Set of 5) U.P
1 - 2 0.59$ 0.64$
3 - 4 0.56$ 0.61$
5 - 9 0.53$ 0.57$
10 - 19 0.52$ 0.56$
20 - 49 0.50$ 0.54$
50 - 99 0.48$ 0.52$
100 - 789 0.46$ 0.50$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 3941
Set of 5

BAS85-GS08. VRRM: 30V. Average Rectified Current per Diode: 0.2A. Housing: 10pF. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. VRRM: 30 v. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.80V / 0.1A. Mounting Type: SMD. Reverse Leakage Current: 2uA / 25V. Series: BAS. Reverse Recovery Time (Max): 2uA. Information: 0.2uA. MSL: 200mW. RoHS: yes. Spec info: IFSM 0.6A t=1s. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V. Original product from manufacturer Vishay. Quantity in stock updated on 01/08/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 1618
BAS85

BAS85

Forward current (AV): 0.2A. IFSM: 4A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80...
BAS85
Forward current (AV): 0.2A. IFSM: 4A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. VRRM: 30 v. Cj: 10pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Glass Fast Switching Schottky Barrier Diodes. MRI (max): 2uA. Number of terminals: 2. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Spec info: IFSM--4A t=10ms. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V
BAS85
Forward current (AV): 0.2A. IFSM: 4A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. VRRM: 30 v. Cj: 10pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Glass Fast Switching Schottky Barrier Diodes. MRI (max): 2uA. Number of terminals: 2. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Spec info: IFSM--4A t=10ms. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V
Set of 10
1.15$ VAT incl.
(1.06$ excl. VAT)
1.15$

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RSF1WS-0R15

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