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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 2.8A, 4.5A, 4.5A, 1.6 Ohms, 600V - BUZ90

N-channel transistor, 2.8A, 4.5A, 4.5A, 1.6 Ohms, 600V - BUZ90
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.65$ 2.86$
5 - 9 2.52$ 2.72$
10 - 24 2.39$ 2.58$
25 - 28 2.26$ 2.44$
Quantity U.P
1 - 4 2.65$ 2.86$
5 - 9 2.52$ 2.72$
10 - 24 2.39$ 2.58$
25 - 28 2.26$ 2.44$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 28
Set of 1

N-channel transistor, 2.8A, 4.5A, 4.5A, 1.6 Ohms, 600V - BUZ90. N-channel transistor, 2.8A, 4.5A, 4.5A, 1.6 Ohms, 600V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 4.5A. On-resistance Rds On: 1.6 Ohms. Voltage Vds(max): 600V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 75W. Technology: V-MOS. Quantity per case: 1. Quantity in stock updated on 28/04/2025, 01:25.

Equivalent products :

Quantity in stock : 50
IRFBC40

IRFBC40

N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (...
IRFBC40
N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 25A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
IRFBC40
N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 25A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
2.96$ VAT incl.
(2.74$ excl. VAT)
2.96$
Quantity in stock : 59
BUZ90A

BUZ90A

N-channel transistor, 2.8A, 4A, 4A, 2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.8A. ID (T=25°C...
BUZ90A
N-channel transistor, 2.8A, 4A, 4A, 2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.8A. ID (T=25°C): 4A. Idss (max): 4A. On-resistance Rds On: 2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Number of terminals: 3. Quantity per case: 1
BUZ90A
N-channel transistor, 2.8A, 4A, 4A, 2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.8A. ID (T=25°C): 4A. Idss (max): 4A. On-resistance Rds On: 2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Number of terminals: 3. Quantity per case: 1
Set of 1
2.89$ VAT incl.
(2.67$ excl. VAT)
2.89$

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Quantity in stock : 28
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2SB1240

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IRFBC40

IRFBC40

N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (...
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BUZ90AF

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BTA40-600B

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IRFPC50

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