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Semiconductors Diodes Standard and Rectifier Diodes

BYV32E-200

BYV32E-200
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 3.05$ 3.30$
5 - 9 2.90$ 3.13$
10 - 24 2.81$ 3.04$
25 - 49 2.75$ 2.97$
50 - 99 2.68$ 2.90$
100 - 148 2.40$ 2.59$
Quantity U.P
1 - 4 3.05$ 3.30$
5 - 9 2.90$ 3.13$
10 - 24 2.81$ 3.04$
25 - 49 2.75$ 2.97$
50 - 99 2.68$ 2.90$
100 - 148 2.40$ 2.59$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 148
Set of 1

BYV32E-200. VRRM: 200V. Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: ULTRA FAST. Note: common cathode. Marking on the case: BYV32-200. Equivalents: BYV32-200G, BYV32-200-E3/45. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100A t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.01V. Forward voltage Vf (min): 0.74V. Original product from manufacturer Ween Semiconductors. Quantity in stock updated on 01/08/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 45
MUR1620CT

MUR1620CT

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR1620CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 250uA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V
MUR1620CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 250uA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V
Set of 1
3.29$ VAT incl.
(3.04$ excl. VAT)
3.29$
Quantity in stock : 40
MUR1660CT

MUR1660CT

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR1660CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Note: common cathode. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V
MUR1660CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Note: common cathode. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V
Set of 1
3.08$ VAT incl.
(2.85$ excl. VAT)
3.08$
Quantity in stock : 148
BYV32E-200

BYV32E-200

VRRM: 200V. Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet)...
BYV32E-200
VRRM: 200V. Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: ULTRA FAST. Note: common cathode. Marking on the case: BYV32-200. Equivalents: BYV32-200G, BYV32-200-E3/45. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100A t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.01V. Forward voltage Vf (min): 0.74V
BYV32E-200
VRRM: 200V. Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: ULTRA FAST. Note: common cathode. Marking on the case: BYV32-200. Equivalents: BYV32-200G, BYV32-200-E3/45. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100A t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.01V. Forward voltage Vf (min): 0.74V
Set of 1
3.30$ VAT incl.
(3.05$ excl. VAT)
3.30$

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