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Semiconductors Diodes Standard and Rectifier Diodes

BYV32E-200

BYV32E-200
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.77$ 1.91$
5 - 9 1.68$ 1.82$
10 - 24 1.59$ 1.72$
25 - 49 1.50$ 1.62$
50 - 99 1.47$ 1.59$
100 - 249 1.65$ 1.78$
250 - 2018 1.84$ 1.99$
Quantity U.P
1 - 4 1.77$ 1.91$
5 - 9 1.68$ 1.82$
10 - 24 1.59$ 1.72$
25 - 49 1.50$ 1.62$
50 - 99 1.47$ 1.59$
100 - 249 1.65$ 1.78$
250 - 2018 1.84$ 1.99$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2018
Set of 1

BYV32E-200. Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). VRRM: 200V. Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 125A t=10ms. Quantity in stock updated on 28/04/2025, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 70
MUR1620CT

MUR1620CT

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR1620CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 250uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. Quantity per case: 2. Number of terminals: 3. Spec info: Ifsm 100Ap
MUR1620CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 250uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. Quantity per case: 2. Number of terminals: 3. Spec info: Ifsm 100Ap
Set of 1
3.29$ VAT incl.
(3.04$ excl. VAT)
3.29$
Quantity in stock : 40
MUR1660CT

MUR1660CT

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR1660CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 100Ap
MUR1660CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 100Ap
Set of 1
3.08$ VAT incl.
(2.85$ excl. VAT)
3.08$
Quantity in stock : 2018
BYV32E-200

BYV32E-200

Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO...
BYV32E-200
Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). VRRM: 200V. Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 125A t=10ms
BYV32E-200
Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). VRRM: 200V. Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 125A t=10ms
Set of 1
1.91$ VAT incl.
(1.77$ excl. VAT)
1.91$

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