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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 7A, 11A, 100uA, 0.48 Ohms, TO-220FP, TO-220FP, 500V - FQPF11N50CF

N-channel transistor, 7A, 11A, 100uA, 0.48 Ohms, TO-220FP, TO-220FP, 500V - FQPF11N50CF
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 5.18$ 5.60$
5 - 9 4.92$ 5.32$
10 - 24 4.77$ 5.16$
25 - 49 4.66$ 5.04$
50 - 53 4.56$ 4.93$
Quantity U.P
1 - 4 5.18$ 5.60$
5 - 9 4.92$ 5.32$
10 - 24 4.77$ 5.16$
25 - 49 4.66$ 5.04$
50 - 53 4.56$ 4.93$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 53
Set of 1

N-channel transistor, 7A, 11A, 100uA, 0.48 Ohms, TO-220FP, TO-220FP, 500V - FQPF11N50CF. N-channel transistor, 7A, 11A, 100uA, 0.48 Ohms, TO-220FP, TO-220FP, 500V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.48 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 500V. C(in): 1515pF. Cost): 185pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 43nC, Low Crss 20pF. G-S Protection: no. Id(imp): 44A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 48W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 24 ns. Technology: QFET ® FRFET ® MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Fairchild. Quantity in stock updated on 17/06/2025, 19:25.

Equivalent products :

Quantity in stock : 316
SPA11N80C3

SPA11N80C3

N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A...
SPA11N80C3
N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. G-S Protection: no. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Number of terminals: 3. Pd (Power Dissipation, Max): 41W. Spec info: Fully isolated package (2500VAC /1 minute). Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
SPA11N80C3
N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. G-S Protection: no. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Number of terminals: 3. Pd (Power Dissipation, Max): 41W. Spec info: Fully isolated package (2500VAC /1 minute). Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
6.73$ VAT incl.
(6.23$ excl. VAT)
6.73$
Out of stock
FQPF12N60C

FQPF12N60C

N-channel transistor, 7.4A, 12A, 10uA, 0.53 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 7.4A. ID ...
FQPF12N60C
N-channel transistor, 7.4A, 12A, 10uA, 0.53 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 7.4A. ID (T=25°C): 12A. Idss (max): 10uA. On-resistance Rds On: 0.53 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1760pF. Cost): 182pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 48A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 51W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
FQPF12N60C
N-channel transistor, 7.4A, 12A, 10uA, 0.53 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 7.4A. ID (T=25°C): 12A. Idss (max): 10uA. On-resistance Rds On: 0.53 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1760pF. Cost): 182pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 48A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 51W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
6.55$ VAT incl.
(6.06$ excl. VAT)
6.55$

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IRFB4019

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FQP12N60C

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