Electronic components and equipment, for businesses and individuals

GBI10G

GBI10G
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.09$ 2.26$
5 - 9 1.98$ 2.14$
10 - 22 1.88$ 2.03$
Quantity U.P
1 - 4 2.09$ 2.26$
5 - 9 1.98$ 2.14$
10 - 22 1.88$ 2.03$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 22
Set of 1

GBI10G. VRRM: 400V. Forward current (AV): 10A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. IFSM: 160A. Marking on the case: +~~-. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Quantity in stock updated on 27/04/2025, 18:25.

Equivalent products :

Quantity in stock : 78
GBI10J

GBI10J

VRRM: 600V. Forward current (AV): 10A. Quantity per case: 4. Dielectric structure: Diode bridge. Sem...
GBI10J
VRRM: 600V. Forward current (AV): 10A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 160A. MRI (max): 5uA. Marking on the case: +~~-. Equivalents: KBJ10J. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
GBI10J
VRRM: 600V. Forward current (AV): 10A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 160A. MRI (max): 5uA. Marking on the case: +~~-. Equivalents: KBJ10J. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
Set of 1
2.29$ VAT incl.
(2.12$ excl. VAT)
2.29$

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N-channel transistor, 8A, 8A, 100uA, 0.75 Ohms, TO-220FP, TO-220F, 500V. ID (T=100°C): 8A. ID (T=25...
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B250C2300A

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VRRM: 500V. Forward current (AV): 2.5A. Dielectric structure: Diode bridge. IFSM: 50A. MRI (min): 10...
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B250C2300-1500

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Vrms: 250V. VRRM: 600V. Forward current (AV): 2.3A. Dielectric structure: Diode bridge. Semiconducto...
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KBPC3510

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VRRM: 1000V. Forward current (AV): 35A. IFSM: 400A. MRI (max): 1mA. MRI (min): 10uA. Dimensions of c...
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B80C1500B

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VRRM: 160V. Forward current (AV): 1.5A. Cj: 1300pF. Dielectric structure: Diode bridge. Trr Diode (M...
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GBI20G

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VRRM: 400V. Forward current (AV): 20A. Quantity per case: 4. Dielectric structure: Diode bridge. Sem...
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STRF6653

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B380C2300-1500

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VRRM: 380V. Forward current (AV): 2.3A. Quantity per case: 4. Dielectric structure: Diode bridge. Se...
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COIL3U3-17A

COIL3U3-17A

Direction of terminals: radial connections. Dimensions: ferrit 6x29mm...
COIL3U3-17A
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KBPC1006

KBPC1006

VRRM: 600V. Forward current (AV): 10A. Cj: 21pF. Quantity per case: 4. Dielectric structure: Diode b...
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