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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 8A, 8A, 100uA, 0.75 Ohms, TO-220FP, TO-220F, 500V - 2SK3561

N-channel transistor, 8A, 8A, 100uA, 0.75 Ohms, TO-220FP, TO-220F, 500V - 2SK3561
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Quantity excl. VAT VAT incl.
1 - 4 3.79$ 4.10$
5 - 9 3.60$ 3.89$
10 - 24 3.41$ 3.69$
25 - 37 3.22$ 3.48$
Quantity U.P
1 - 4 3.79$ 4.10$
5 - 9 3.60$ 3.89$
10 - 24 3.41$ 3.69$
25 - 37 3.22$ 3.48$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 37
Set of 1

N-channel transistor, 8A, 8A, 100uA, 0.75 Ohms, TO-220FP, TO-220F, 500V - 2SK3561. N-channel transistor, 8A, 8A, 100uA, 0.75 Ohms, TO-220FP, TO-220F, 500V. ID (T=100°C): 8A. ID (T=25°C): 8A. Idss (max): 100uA. On-resistance Rds On: 0.75 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. C(in): 1050pF. Cost): 110pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 32A. Marking on the case: K3561. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 26 ns. Technology: Field Effect (TT-MOSVI). Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: yes. Quantity in stock updated on 28/04/2025, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 63
IRFI840G

IRFI840G

N-channel transistor, 0.85 Ohm 40W, TO-220-F, 2.9A, 4.6A, 250uA, 0.85 Ohms, TO-220FP, TO-220F, 500V,...
IRFI840G
N-channel transistor, 0.85 Ohm 40W, TO-220-F, 2.9A, 4.6A, 250uA, 0.85 Ohms, TO-220FP, TO-220F, 500V, 500V. On-resistance Rds On: 0.85 Ohm 40W. Housing: TO-220-F. ID (T=100°C): 2.9A. ID (T=25°C): 4.6A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. Drain-source voltage (Vds): 500V. Channel type: N. Type of transistor: MOSFET power transistor. Max drain current: 4.6A. Type of transistor: MOSFET. G-S Protection: diode. Id(imp): 18A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFI840G
N-channel transistor, 0.85 Ohm 40W, TO-220-F, 2.9A, 4.6A, 250uA, 0.85 Ohms, TO-220FP, TO-220F, 500V, 500V. On-resistance Rds On: 0.85 Ohm 40W. Housing: TO-220-F. ID (T=100°C): 2.9A. ID (T=25°C): 4.6A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. Drain-source voltage (Vds): 500V. Channel type: N. Type of transistor: MOSFET power transistor. Max drain current: 4.6A. Type of transistor: MOSFET. G-S Protection: diode. Id(imp): 18A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
3.32$ VAT incl.
(3.07$ excl. VAT)
3.32$
Quantity in stock : 75
IRF840A

IRF840A

N-channel transistor, 5.1A, 8A, 250uA, 0.85 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 5.1A. ID (T...
IRF840A
N-channel transistor, 5.1A, 8A, 250uA, 0.85 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1018pF. Cost): 155pF. Channel type: N. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. Id(imp): 32A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
IRF840A
N-channel transistor, 5.1A, 8A, 250uA, 0.85 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1018pF. Cost): 155pF. Channel type: N. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. Id(imp): 32A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
3.04$ VAT incl.
(2.81$ excl. VAT)
3.04$

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IRF840

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CFR1-4W-18K

CFR1-4W-18K

Resistance: 18k Ohms. Power: 0.25W. Resistor type: carbon layer. Note: CFR1/4W E12. Note: 2.5x6.8mm....
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IRF710

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2N2222A

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LM358P

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TK20J50D

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