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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 43A, 42A, 250uA, 11m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRLR2905Z

N-channel transistor, 43A, 42A, 250uA, 11m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRLR2905Z
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Quantity excl. VAT VAT incl.
1 - 4 2.69$ 2.91$
5 - 9 2.55$ 2.76$
10 - 24 2.42$ 2.62$
25 - 49 2.28$ 2.46$
50 - 99 2.23$ 2.41$
100 - 249 2.18$ 2.36$
250 - 449 1.91$ 2.06$
Quantity U.P
1 - 4 2.69$ 2.91$
5 - 9 2.55$ 2.76$
10 - 24 2.42$ 2.62$
25 - 49 2.28$ 2.46$
50 - 99 2.23$ 2.41$
100 - 249 2.18$ 2.36$
250 - 449 1.91$ 2.06$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 449
Set of 1

N-channel transistor, 43A, 42A, 250uA, 11m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRLR2905Z. N-channel transistor, 43A, 42A, 250uA, 11m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 43A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 11m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 1570pF. Cost): 230pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 22ms. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 240A. IDss (min): 20uA. Equivalents: IRLR2905ZTRPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Spec info: AUTOMOTIVE MOSFET. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 28/04/2025, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 134
IRLR3705ZPBF

IRLR3705ZPBF

N-channel transistor, 63A, 89A, 250uA, 6.5m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55...
IRLR3705ZPBF
N-channel transistor, 63A, 89A, 250uA, 6.5m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 63A. ID (T=25°C): 89A. Idss (max): 250uA. On-resistance Rds On: 6.5m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 2900pF. Cost): 420pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 21ms. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 360A. IDss (min): 20uA. Number of terminals: 2. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 33 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Spec info: AUTOMOTIVE MOSFET. G-S Protection: no
IRLR3705ZPBF
N-channel transistor, 63A, 89A, 250uA, 6.5m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 63A. ID (T=25°C): 89A. Idss (max): 250uA. On-resistance Rds On: 6.5m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 2900pF. Cost): 420pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 21ms. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 360A. IDss (min): 20uA. Number of terminals: 2. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 33 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Spec info: AUTOMOTIVE MOSFET. G-S Protection: no
Set of 1
2.76$ VAT incl.
(2.55$ excl. VAT)
2.76$

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