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Semiconductors Diodes Standard and Rectifier Diodes

MURS320T3G

MURS320T3G
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.89$ 0.96$
10 - 24 0.85$ 0.92$
25 - 49 0.80$ 0.86$
50 - 99 0.76$ 0.82$
100 - 100 0.74$ 0.80$
Quantity U.P
1 - 9 0.89$ 0.96$
10 - 24 0.85$ 0.92$
25 - 49 0.80$ 0.86$
50 - 99 0.76$ 0.82$
100 - 100 0.74$ 0.80$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 100
Set of 1

MURS320T3G. Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 200V. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. MRI (max): 150uA. MRI (min): 5uA. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V. Number of terminals: 2. Note: screen printing/CMS code U3D. Quantity in stock updated on 28/04/2025, 17:25.

Technical documentation

Equivalent products :

Quantity in stock : 1148
MBRS360T3G

MBRS360T3G

Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMC CASE 40...
MBRS360T3G
Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 60V. RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B36. Equivalents: Vishay VS-MBRS360-M3/9AT. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.74V. Forward voltage Vf (min): 0.74V. Spec info: Vf 0.74V/3A, (iF=3.0A, TJ=25°C)
MBRS360T3G
Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 60V. RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B36. Equivalents: Vishay VS-MBRS360-M3/9AT. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.74V. Forward voltage Vf (min): 0.74V. Spec info: Vf 0.74V/3A, (iF=3.0A, TJ=25°C)
Set of 1
0.97$ VAT incl.
(0.90$ excl. VAT)
0.97$
Quantity in stock : 818
SS34-E3-57T

SS34-E3-57T

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (...
SS34-E3-57T
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (SMC) 7.11x6.22mm. VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. MRI (max): 20mA. MRI (min): 500uA. Marking on the case: SS34. Equivalents: SS34-E3/9AT. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: Ifsm 100Ap (t=8.3ms)
SS34-E3-57T
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (SMC) 7.11x6.22mm. VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. MRI (max): 20mA. MRI (min): 500uA. Marking on the case: SS34. Equivalents: SS34-E3/9AT. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: Ifsm 100Ap (t=8.3ms)
Set of 1
0.63$ VAT incl.
(0.58$ excl. VAT)
0.63$

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