N-channel FETs and MOSFETs

N-channel transistor, 3.2A, 5A, 250uA, 1.4 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 3.2A. ID (T=25°C): 5A. Idss (max): 250uA. On-resistance Rds On: 1.4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 620 ns. Cost): 93 ns. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 430 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 20A. IDss (min): 25uA. Temperature: +105°C. Pd (Power Dissipation, Max): 74W. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 500V, 4.5A, 74W. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 4.5A. Housing (JEDEC standard): 74W. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF830PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ 2.7A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.2 ns. Switch-off delay tf[nsec.]: 42 ns. Ciss Gate Capacitance [pF]: 610pF. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 4.8A, 8A, 250uA, 0.85 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 4.8A. ID (T=25°C): 8A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1300pF. Cost): 310pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 32A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 5.1A, 8A, 250uA, 0.85 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1018pF. Cost): 155pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 32A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 500V, 8A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF840APBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 26 ns. Ciss Gate Capacitance [pF]: 1018pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 5.1A, 8A, 250uA, 0.85 Ohms, D2PAK ( TO-263 ), TO-263AB, 500V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263AB. Voltage Vds(max): 500V. C(in): 1018pF. Cost): 155pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 32A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 500V, 8A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRF840ASPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 26 ns. Ciss Gate Capacitance [pF]: 1018pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 500V, 8A, 500V, 0.85 Ohms, TO-220. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 8A. Drain-source voltage (Vds): 500V. On-resistance Rds On: 0.85 Ohms. Housing: TO-220. Manufacturer's marking: IRF840PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 49 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 8A. Power: 125W

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 500V, 8A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRF840SPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 49 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 9.1A, 11A, 150uA, 0.142 Ohms, SO, SO-8, 30 v. ID (T=100°C): 9.1A. ID (T=25°C): 11A. Idss (max): 150uA. On-resistance Rds On: 0.142 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 760pF. Cost): 170pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 12 ns. Type of transistor: MOSFET. G-S Protection: yes. Id(imp): 88A. IDss (min): 1uA. Marking on the case: IRF8707G. Number of terminals: 3. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 7.3 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Operating temperature: -50...+150°C. Gate/source voltage Vgs: 4.5V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 24A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 24A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F8788. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0028 Ohms @ 24A. Gate breakdown voltage Ugs [V]: 2.35V. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 5720pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 3.5A/-2.3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 3.5A/-2.3A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F9952. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms/025 Ohms @ 2.2/-1A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12 ns/19 ns. Switch-off delay tf[nsec.]: 26/40 ns. Ciss Gate Capacitance [pF]: 190/190pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 3.5A/-2.3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 3.5A/-2.3A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F9952Q. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.15 Ohms/0.4 Ohms @ 1/-0.5A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12 ns/19 ns. Switch-off delay tf[nsec.]: 26/40 ns. Ciss Gate Capacitance [pF]: 190/190pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 7A, 11A, 250uA, 0.52 Ohms, TO-220, TO-220, 500V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. On-resistance Rds On: 0.52 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 500V. C(in): 1423pF. Cost): 208pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 510 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 52nC. G-S Protection: no. Id(imp): 44A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. RoHS: yes. Spec info: N-Ch MOSFET, VBRDSS 500V. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 14 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 11A, 17A, 250uA, 0.26 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 2830pF. Cost): 3310pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 68A. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 220W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 22 ns. Technology: SMPS MOSFET, HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 12A, 20A, 250uA, 0.21 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 12A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.21 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 2870pF. Cost): 3480pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 80A. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 22 ns. Technology: SMPS MOSFET, HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 17A, 23A, 250uA, 0.09 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 17A. ID (T=25°C): 23A. Idss (max): 250uA. On-resistance Rds On: 0.09 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 1200pF. Cost): 260pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. G-S Protection: no. Id(imp): 92A. IDss (min): 25uA. Marking on the case: B23N15D. Number of terminals: 3. Pd (Power Dissipation, Max): 136W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V

N-channel transistor, 40A, 56A, 250uA, 0.04 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 40A. ID (T=25°C): 56A. Idss (max): 250uA. On-resistance Rds On: 0.04 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 4220pF. Cost): 580pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Function: SMPS, High frequency DC-DC converters. G-S Protection: no. Id(imp): 220A. IDss (min): 25uA. Marking on the case: FB260N. Number of terminals: 3. Pd (Power Dissipation, Max): 380W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 190A, 270A, 250uA, 0.0021 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 190A. ID (T=25°C): 270A. Idss (max): 250uA. On-resistance Rds On: 0.0021 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 8970pF. Cost): 1020pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 44 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 1080A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 375W. Assembly/installation: PCB through-hole mounting. Td(off): 118 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 150A, 210A, 250uA, 0.0028 Ohm, TO-220, TO-220AB, 75V. ID (T=100°C): 150A. ID (T=25°C): 210A. Idss (max): 250uA. On-resistance Rds On: 0.0028 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 9400pF. Cost): 820pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 42 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 850A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 370W. Assembly/installation: PCB through-hole mounting. Td(off): 69 ns. Td(on): 25 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 21A, 31A, 250uA, 0.082 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 21A. ID (T=25°C): 31A. Idss (max): 250uA. On-resistance Rds On: 0.082 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 2370pF. Cost): 390pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Function: SMPS, High frequency DC-DC converters. G-S Protection: no. Id(imp): 124A. IDss (min): 25uA. Marking on the case: FB32N20D. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V

N-channel transistor, 150A, 210A, 250uA, 2.4M Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 150A. ID (T=25°C): 210A. Idss (max): 250uA. On-resistance Rds On: 2.4M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 6540pF. Cost): 720pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 840A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 60.4k Ohms, 170A, 250uA, 3.3M Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 170A. Idss (max): 250uA. On-resistance Rds On: 3.3M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 6920pF. Cost): 600pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 36ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 670A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 60.4k Ohms, 170A, 250uA, 3.3M Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 170A. Idss (max): 250uA. On-resistance Rds On: 3.3M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 6920pF. Cost): 600pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 36ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 670A. IDss (min): 20uA. Marking on the case: FB3207. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 110A, 160A, 250uA, 3.3M Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 110A. ID (T=25°C): 160A. Idss (max): 250uA. On-resistance Rds On: 3.3M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 4520pF. Cost): 500pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 31 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 620A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V