N-channel FETs and MOSFETs

N-channel transistor, 12A, 17A, 250uA, 80m Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 80m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 800pF. Cost): 74pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 64 ns. Type of transistor: MOSFET. Function: Key parameters optimized for Class-D audio. G-S Protection: no. Id(imp): 51A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 7 ns. Technology: Digital Audio MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4.9V. Vgs(th) min.: 3V

N-channel transistor, 13A, 18A, 250uA, 80m Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 13A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 80m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1200pF. Cost): 91pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 82 ns. Type of transistor: MOSFET. Function: Key parameters optimized for Class-D audio. G-S Protection: no. Id(imp): 52A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 7.8 ns. Technology: Digital Audio MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 4.9V. Vgs(th) min.: 3V

N-channel transistor, 3.7m Ohms, TO-220, TO-220AB, 100V, 130A, 60.4k Ohms, 250uA. On-resistance Rds On: 3.7m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. ID (T=100°C): 130A. ID (T=25°C): 60.4k Ohms. Idss (max): 250uA. Number of terminals: 3. Pd (Power Dissipation, Max): 370W. RoHS: yes. Weight: 1.99g. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 78 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. C(in): 9620pF. Cost): 670pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: PDP Switch. G-S Protection: no. Id(imp): 670A. IDss (min): 20uA

N-channel transistor, 74A, 104A, 250uA, 0.0093 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 74A. ID (T=25°C): 104A. Idss (max): 250uA. On-resistance Rds On: 0.0093 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 5270pF. Cost): 490pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 86 ns. Type of transistor: MOSFET. Function: High Efficiency Synchronous Rectification in SMPS, High Speed Power Switching. G-S Protection: no. Id(imp): 420A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 380W. RoHS: yes. Weight: 1.99g. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 41 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 3V

N-channel transistor, 46A, 65A, 1mA, 19.7m Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. On-resistance Rds On: 19.7m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: PDP Switch. G-S Protection: no. Id(imp): 260A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 59A, 83A, 1mA, 12m Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 59A. ID (T=25°C): 83A. Idss (max): 1mA. On-resistance Rds On: 12m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 4530pF. Cost): 550pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 76 ns. Type of transistor: MOSFET. Function: PDP Switch. G-S Protection: no. Id(imp): 330A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 24 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 33A, 46A, 1mA, 38m Ohms, TO-220, TO-220AB, 250V. ID (T=100°C): 33A. ID (T=25°C): 46A. Idss (max): 1mA. On-resistance Rds On: 38m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. C(in): 4560pF. Cost): 390pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: Class-D Audio Amplifier 300W-500W (Half-bridge). G-S Protection: no. Id(imp): 180A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 31A, 44A, 250uA, 0.055 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 31A. ID (T=25°C): 44A. Idss (max): 250uA. On-resistance Rds On: 0.055 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 3430pF. Cost): 530pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Function: SMPS, High frequency DC-DC converters. G-S Protection: no. Id(imp): 180A. IDss (min): 25uA. Marking on the case: FB42N20D. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 29 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 69A, 97A, 250uA, 0.072 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 69A. ID (T=25°C): 97A. Idss (max): 250uA. On-resistance Rds On: 0.072 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 4820pF. Cost): 340pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Function: High Speed ​​Power Switching. G-S Protection: no. Id(imp): 390A. IDss (min): 20uA. Marking on the case: IRFB4410ZPBF. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 92A, 130A, 250uA, 5.6M Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 92A. ID (T=25°C): 130A. Idss (max): 250uA. On-resistance Rds On: 5.6M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 7670pF. Cost): 540pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. G-S Protection: no. Id(imp): 550A. IDss (min): 20uA. Marking on the case: IRFB4310. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 68 ns. Td(on): 26 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 53A, 75A, 250uA, 0.011 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 53A. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 0.011 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 6160pF. Cost): 440pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 74 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. G-S Protection: no. Id(imp): 300A. IDss (min): 1uA. Marking on the case: FB4710. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 35 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3.5V

N-channel transistor, PCB soldering, TO-220AB, 100V, 75A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 75A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFB4710PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 45A. Gate breakdown voltage Ugs [V]: 5.5V. Switch-on time ton [nsec.]: 35 ns. Switch-off delay tf[nsec.]: 41 ns. Ciss Gate Capacitance [pF]: 6160pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 36A, 51A, 250uA, 0.032 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 36A. ID (T=25°C): 51A. Idss (max): 250uA. On-resistance Rds On: 0.032 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 2770pF. Cost): 590pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converters, Plasma Display. G-S Protection: no. Id(imp): 230A. IDss (min): 25uA. Marking on the case: FB52N15D. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 25A, 35A, 250uA, 0.032 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 25A. ID (T=25°C): 35A. Idss (max): 250uA. On-resistance Rds On: 0.032 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 1750pF. Cost): 155pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: for class-D audio amplifier applications. G-S Protection: no. Id(imp): 140A. IDss (min): 20uA. Marking on the case: IRFB5615PbF. Number of terminals: 3. Pd (Power Dissipation, Max): 144W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 17.2ns. Td(on): 8.9 ns. Technology: Digital Audio MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V

N-channel transistor, 180A, 250A, 150uA, 1.5M Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 180A. ID (T=25°C): 250A. Idss (max): 150uA. On-resistance Rds On: 1.5M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 7330pF. Cost): 1095pF. Channel type: N. Drain-source protection : yes. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Function: BLDC Motor drive applications, Battery powered circuits, DC/DC and AC/DC converters. G-S Protection: no. Id(imp): 1000A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 78 ns. Td(on): 19 ns. Technology: StrongIRFET, HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.2V

N-channel transistor, 60.4k Ohms, 172A, 150uA, 2M Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 172A. Idss (max): 150uA. On-resistance Rds On: 2M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 4730pF. Cost): 680pF. Channel type: N. Drain-source protection : yes. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Function: BLDC Motor drive applications, Battery powered circuits, DC/DC and AC/DC converters. G-S Protection: no. Id(imp): 770A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 143W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 115 ns. Td(on): 24 ns. Technology: StrongIRFET, HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.2V

N-channel transistor, 5.8A, 9.2A, 250uA, 0.75 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 5.8A. ID (T=25°C): 9.2A. Idss (max): 250uA. On-resistance Rds On: 0.75 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1400pF. Cost): 180pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 530 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. G-S Protection: no. Id(imp): 37A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. RoHS: yes. Spec info: High-speed switching. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -50...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 5.4A, 8.5A, 8.5A, 0.93 Ohms, TO-220, TO-220AB, 650V. ID (T=100°C): 5.4A. ID (T=25°C): 8.5A. Idss (max): 8.5A. On-resistance Rds On: 0.93 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 650V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Pd (Power Dissipation, Max): 167W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

N-channel transistor, 2.3A, 3.6A, 500uA, 2.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 500uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 660pF. Cost): 86pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. G-S Protection: no. Id(imp): 14A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 2.3A, 3.6A, 250uA, 2.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 250uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 510pF. Cost): 70pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. G-S Protection: no. Id(imp): 14A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 9.8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V

N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. G-S Protection: no. Id(imp): 25A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 600V, 1.2 Ohms, TO-220. Drain-source voltage (Vds): 600V. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 6.2A. Power: 125W

N-channel transistor, 2.6A, 4.1A, 500uA, 3 Ohms, TO-220, TO-220AB, 800V. ID (T=100°C): 2.6A. ID (T=25°C): 4.1A. Idss (max): 500uA. On-resistance Rds On: 3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 800V. C(in): 1300pF. Cost): 310pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 16A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: Dynamic dv/dt Rating. Assembly/installation: PCB through-hole mounting. Td(off): 82 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 800V, 4.1A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 4.1A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFBE30PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 3 Ohms @ 2.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 82 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 1.1A, 1.7A, 500uA, 8 Ohms, TO-262 ( I2-PAK ), TO-262, 900V. ID (T=100°C): 1.1A. ID (T=25°C): 1.7A. Idss (max): 500uA. On-resistance Rds On: 8 Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 900V. C(in): 490pF. Cost): 55pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 350 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. G-S Protection: no. Id(imp): 6.8A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 54W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 56 ns. Td(on): 8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V