N-channel FETs and MOSFETs

N-channel transistor, PCB soldering, ITO-220AB, 500V, 4.6A. Housing: PCB soldering. Housing: ITO-220AB. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 4.6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFI840GPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 2.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 55 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 1.1A, 1.7A, 500uA, 4.4 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 1.1A. ID (T=25°C): 1.7A. Idss (max): 500uA. On-resistance Rds On: 4.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 350pF. Cost): 48pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 290ms. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 6A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 1.5A, 2.5A, 500uA, 2.2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 1.5A. ID (T=25°C): 2.5A. Idss (max): 500uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 660pF. Cost): 86pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: Switching. G-S Protection: no. Id(imp): 10A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 2.2A, 3.5A, 500uA, 1.2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.2A. ID (T=25°C): 3.5A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 470ms. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 14A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, ITO-220AB, 900V, 1.9A. Housing: PCB soldering. Housing: ITO-220AB. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 1.9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFIBF30GPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 3.7 Ohms @ 1.1A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 90 ns. Ciss Gate Capacitance [pF]: 1200pF. Maximum dissipation Ptot [W]: 35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 22A, 31A, 31A, 0.024 Ohms, TO-220FP, TO-220F, 55V. ID (T=100°C): 22A. ID (T=25°C): 31A. Idss (max): 31A. On-resistance Rds On: 0.024 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 55V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

N-channel transistor, PCB soldering (SMD), SOT-223, 55V, 1.9A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 1.9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL014N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.16 Ohms @ 1.9A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.6 ns. Switch-off delay tf[nsec.]: 12 ns. Ciss Gate Capacitance [pF]: 190pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 60V, 2.7A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 2.7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FA. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 1.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 13 ns. Ciss Gate Capacitance [pF]: 300pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 2.3A, 2.8A, 250uA, 0.075 Ohms, SOT-223 ( TO-226 ), SOT-223, 55V. ID (T=100°C): 2.3A. ID (T=25°C): 2.8A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 55V. C(in): 400pF. Cost): 145pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 35 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 11.2A. IDss (min): 25uA. Equivalents: IRFL024NPBF. Number of terminals: 3. Pd (Power Dissipation, Max): 2.1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 22.2 ns. Td(on): 8.1 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), SOT-223, 55V, 2.8A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 2.8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL024N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 2.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.1 ns. Switch-off delay tf[nsec.]: 22 ns. Ciss Gate Capacitance [pF]: 400pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 100V, 1.5A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL110. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.9ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 180pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 0.6A, 0.96A, 250uA, 1.5 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V. ID (T=100°C): 0.6A. ID (T=25°C): 0.96A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 200V. C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 7.7A. IDss (min): 25uA. Note: screen printing/SMD code FC. Marking on the case: FC. Number of terminals: 4. Pd (Power Dissipation, Max): 3.1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 14 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), SOT-223, 200V, 0.96A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 0.96A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FC. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ 0.58A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.2 ns. Switch-off delay tf[nsec.]: 14 ns. Ciss Gate Capacitance [pF]: 140pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 55V, 3.7A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 3.7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL4105. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.045 Ohms @ 3.7A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7.1 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 660pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 100V, 1.6A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL4310. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 1.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7.8 ns. Switch-off delay tf[nsec.]: 34 ns. Ciss Gate Capacitance [pF]: 330pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-247AC, 55V, 53A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 53A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP044N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ 29A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 1500pF. Maximum dissipation Ptot [W]: 120W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 52A, 70A, 250uA, 0.018 Ohms, TO-247, TO-247AC, 60V. ID (T=100°C): 52A. ID (T=25°C): 70A. Idss (max): 250uA. On-resistance Rds On: 0.018 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 60V. C(in): 2400pF. Cost): 1300pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: PowerMOSFET. G-S Protection: no. Id(imp): 290A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 210 ns. Td(on): 8.1 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 45A, 64A, 250uA, 0.016 Ohms, TO-247, TO-247AC, 55V. ID (T=100°C): 45A. ID (T=25°C): 64A. Idss (max): 250uA. On-resistance Rds On: 0.016 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V. C(in): 1900pF. Cost): 620pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 94 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 210A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 11 ns. Technology: HEXFET ® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 64A, 70A, 250uA, 0.014 Ohms, TO-247, TO-247AC, 60V. ID (T=100°C): 64A. ID (T=25°C): 70A. Idss (max): 250uA. On-resistance Rds On: 0.014 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 60V. C(in): 4500pF. Cost): 2000pF. Channel type: N. Drain-source protection : yes. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 360A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 83 ns. Td(on): 20 ns. Technology: Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 57A, 81A, 250uA, 0.012 Ohms, TO-247, TO-247AC, 55V. ID (T=100°C): 57A. ID (T=25°C): 81A. Idss (max): 250uA. On-resistance Rds On: 0.012 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V. C(in): 2900pF. Cost): 880pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 81 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 290A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 11 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 59A, 110A, 250uA, 0.008 Ohms, TO-247, TO-247AC, 55V. ID (T=100°C): 59A. ID (T=25°C): 110A. Idss (max): 250uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V. C(in): 4000pF. Cost): 1300pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 390A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: Ultra Low On-Resistance. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247AC, 55V, 110A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 110A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP064NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.008 Ohms @ 59A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 4000pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering, TO-247AC, 60V, 70A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 70A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP064PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.009 Ohms @ 78A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 21 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 7400pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 22A, 31A, 250uA, 0.077 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 22A. ID (T=25°C): 31A. Idss (max): 250uA. On-resistance Rds On: 0.077 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. C(in): 1700pF. Cost): 550pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 60.4k Ohms. IDss (min): 25uA. Note: complementary transistor (pair) IRFP9140. Pd (Power Dissipation, Max): 180W. RoHS: yes. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Power: 180W. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 110A, 160A, 250uA, 0.0042 Ohms, TO-247, TO-247AC, 55V. ID (T=100°C): 110A. ID (T=25°C): 160A. Idss (max): 250uA. On-resistance Rds On: 0.0042 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V. C(in): 5600pF. Cost): 1310pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Fast Switching, Advanced Process Technology, Ultra Low On-Resistance. G-S Protection: no. Id(imp): 640A. IDss (min): 25uA. Pd (Power Dissipation, Max): 310W. RoHS: yes. Td(off): 140 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Power: 310W. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V