N-channel FETs and MOSFETs

N-channel transistor, 14A, 23A, 250uA, 0.20 Ohms, TO-247, TO-247AC, 400V. ID (T=100°C): 14A. ID (T=25°C): 23A. Idss (max): 250uA. On-resistance Rds On: 0.20 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 400V. C(in): 4500pF. Cost): 1100pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 92A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 14A, 23A, 250uA, 0.20 Ohms, TO-247, TO-247AC, 400V. ID (T=100°C): 14A. ID (T=25°C): 23A. Idss (max): 250uA. On-resistance Rds On: 0.20 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 400V. C(in): 3400pF. Cost): 540pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 91A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 16 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 400V, 0.20 Ohms, TO-247AC HV. Drain-source voltage (Vds): 400V. On-resistance Rds On: 0.20 Ohms. Housing: TO-247AC HV. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 23A. Power: 280W

N-channel transistor, 40A, 57A, 250uA, 0.026 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 40A. ID (T=25°C): 57A. Idss (max): 250uA. On-resistance Rds On: 0.026 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. C(in): 3000pF. Cost): 640pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 210 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 180A. IDss (min): 25uA. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Td(off): 58 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 100V, 0.028 Ohms, TO-247AC. Drain-source voltage (Vds): 100V. On-resistance Rds On: 0.028 Ohms. Housing: TO-247AC. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 51A. Power: 180W

N-channel transistor, 46A, 65A, 1mA, 0.021 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. On-resistance Rds On: 0.021 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: PDP MOSFET. G-S Protection: no. Id(imp): 260A. IDss (min): 20uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power-MOSFET, PDP SWITCH. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 31A, 44A, 1mA, 0.038 Ohms, TO-247, TO-247AC, 250V. ID (T=100°C): 31A. ID (T=25°C): 44A. Idss (max): 1mA. On-resistance Rds On: 0.038 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 250V. C(in): 4560pF. Cost): 390pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: PDP MOSFET. G-S Protection: no. Id(imp): 180A. IDss (min): 20uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 310W. RoHS: yes. Weight: 5.8g. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 44 ns. Technology: HEXFET Power-MOSFET, PDP SWITCH. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 33A, 46A, 150uA, 0.049 Ohms, TO-247, TO-247AC, 300V. ID (T=100°C): 33A. ID (T=25°C): 46A. Idss (max): 150uA. On-resistance Rds On: 0.049 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 300V. C(in): 7370pF. Cost): 520pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 190A. IDss (min): 5uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 430W. RoHS: yes. Spec info: Idm--190Ap.. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power-MOSFET, PDP SWITCH. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 40A, 57A, 1mA, 0.029 Ohms, TO-247, TO-247AC, 250V. ID (T=100°C): 40A. ID (T=25°C): 57A. Idss (max): 1mA. On-resistance Rds On: 0.029 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 250V. C(in): 5860pF. Cost): 530pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: PDP Switch. G-S Protection: no. Id(imp): 230A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 360W. RoHS: yes. Spec info: Idm--230Ap. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power-MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-247AC, 100V, 195A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 195A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP4468PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0026 Ohms @ 180A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 52 ns. Switch-off delay tf[nsec.]: 160 ns. Ciss Gate Capacitance [pF]: 19860pF. Maximum dissipation Ptot [W]: 520W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 8.7A, 14A, 250uA, 0.4 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 8.7A. ID (T=25°C): 14A. Idss (max): 250uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. C(in): 2600pF. Cost): 420pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 540 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. G-S Protection: no. Id(imp): 56A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 92us. Td(on): 17us. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 8.6A, 14A, 250uA, 0.4 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 8.6A. ID (T=25°C): 14A. Idss (max): 250uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. C(in): 2200pF. Cost): 320pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 580us. Type of transistor: MOSFET. Function: Ultra low Gate Charger. G-S Protection: no. Id(imp): 56A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247, 500V, 14A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 14A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP450LCPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 8.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 2200pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-247, 500V, 14A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 14A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP450PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 8.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 92 ns. Ciss Gate Capacitance [pF]: 2600pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 121A, 694A, 250uA, 0.0048 Ohms, TO-247, TO-247AC, 150V. ID (T=100°C): 121A. ID (T=25°C): 694A. Idss (max): 250uA. On-resistance Rds On: 0.0048 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 150V. C(in): 10470pF. Cost): 977pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 171A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 517W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 27 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 13A, 20A, 250uA, 0.27 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. C(in): 4200pF. Cost): 870pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 80A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET, High Efficiency Synchronous R. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247, 500V, 20A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 20A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP460APBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 3100pF. Maximum dissipation Ptot [W]: 280W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 13A, 20A, 10uA, 0.20 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.20 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. C(in): 3940pF. Cost): 152pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 437ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 62A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 278W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 117 ns. Td(on): 24 ns. Technology: D Series Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 12A, 20A, 250uA, 0.27 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 12A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. C(in): 3600pF. Cost): 440pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: fast Switching, Ultra Low Gate Charge. G-S Protection: no. Id(imp): 80A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 18 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247, 500V, 20A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 20A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP460LCPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 3600pF. Maximum dissipation Ptot [W]: 280W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-247, 500V, 20A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 20A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP460PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 4200pF. Maximum dissipation Ptot [W]: 280W

N-channel transistor, 92A, 130A, 0.1mA, 130A, 0.008 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 92A. ID (T=25°C): 130A. Idss: 0.1mA. Idss (max): 130A. On-resistance Rds On: 0.008 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 520A. Pd (Power Dissipation, Max): 520W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

N-channel transistor, 51A, 72A, 250uA, 72A, 0.011 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 51A. ID (T=25°C): 72A. Idss: 250uA. Idss (max): 72A. On-resistance Rds On: 0.011 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. C(in): 6160pF. Cost): 440pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: Power-MOSFET. G-S Protection: no. Id(imp): 300A. IDss (min): 0.1uA. Note: High Frequency. Pd (Power Dissipation, Max): 190W. Td(off): 41 ns. Td(on): 35 ns. Technology: HEXFET® Power MOSFET. Gate/source voltage Vgs: 20V. Gate/source voltage (off) min.: 3.5V. Vgs(th) max.: 5.5V

N-channel transistor, 100V, 0.014 Ohms, TO-247AC. Drain-source voltage (Vds): 100V. On-resistance Rds On: 0.014 Ohms. Housing: TO-247AC. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 72A. Power: 190W

ROHS: Yes. Housing: TO247AC. Power: 366W. Assembly/installation: THT. Type of transistor: N-MOSFET. Polarity: unipolar. Technology: HEXFET®. Drain-source voltage: 40V. Drain current: 404A. On-state resistance: 1.3m Ohms. Gate-source voltage: ±20V. Charge: 300nC. Conditioning: tubus