N-channel FETs and MOSFETs

N-channel transistor, 49A, 71A, 250uA, 0.011 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 49A. ID (T=25°C): 71A. Idss (max): 250uA. On-resistance Rds On: 0.011 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 2030pF. Cost): 470pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance, Fast Switching. G-S Protection: no. Id(imp): 280A. IDss (min): 20uA. Number of terminals: 2. Pd (Power Dissipation, Max): 140W. RoHS: yes. Spec info: AUTOMOTIVE MOSFET. Assembly/installation: surface-mounted component (SMD). Td(off): 43 ns. Td(on): 13 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 61A, 86A, 150uA, 5.2m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 61A. ID (T=25°C): 86A. Idss (max): 150uA. On-resistance Rds On: 5.2m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 2330pF. Cost): 460pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance, Ultra-Low Gate Impedance. G-S Protection: no. Id(imp): 340A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 79W. RoHS: yes. Spec info: AUTOMOTIVE MOSFET. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 12 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V

N-channel transistor, 12A, 16A, 250uA, 0.115 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V. ID (T=100°C): 12A. ID (T=25°C): 16A. Idss (max): 250uA. On-resistance Rds On: 0.115 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. C(in): 640pF. Cost): 160pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 60A. IDss (min): 25uA. Pd (Power Dissipation, Max): 79W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 37 ns. Td(on): 6.4 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 19A, 27A, 0.025mA, 27A, 0.045 Ohms, D-PAK TO-252AA, 55V. ID (T=100°C): 19A. ID (T=25°C): 27A. Idss: 0.025mA. Idss (max): 27A. On-resistance Rds On: 0.045 Ohms. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 55V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: td(on) 7ns. Id(imp): 100A. Pd (Power Dissipation, Max): 68W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET

N-channel transistor, 1.5A, 2.4A, 0.025mA, 250uA, 3 Ohms, D-PAK TO-252AA, 500V. ID (T=100°C): 1.5A. ID (T=25°C): 2.4A. Idss: 0.025mA. Idss (max): 250uA. On-resistance Rds On: 3 Ohms. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 500V. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 8A. IDss (min): 25uA. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 1.3A, 2A, 500uA, 4.4 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 600V. ID (T=100°C): 1.3A. ID (T=25°C): 2A. Idss (max): 500uA. On-resistance Rds On: 4.4 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 600V. C(in): 350pF. Cost): 48pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 8A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 600V, 2A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 2A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRFRC20PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 4.4 Ohms @ 1.2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 42W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 4.1A, 6.5A, 100uA, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 100uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. C(in): 500pF. Cost): 95pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 137 ns. Type of transistor: MOSFET. Function: Advanced Power MOSFET. G-S Protection: no. Id(imp): 36A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: Advanced Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 4.1A, 6.5A, 6.5A, 0.34 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 6.5A. On-resistance Rds On: 0.34 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Low gate charge (typical 22nC), Low Crss. Id(imp): 26A. Pd (Power Dissipation, Max): 38W. Assembly/installation: PCB through-hole mounting. Technology: Power MOSFET

N-channel transistor, 3.7A, 5.8A, 5.8A, 0.45 Ohms, TO-220FP, TO-220F, 250V. ID (T=100°C): 3.7A. ID (T=25°C): 5.8A. Idss (max): 5.8A. On-resistance Rds On: 0.45 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 250V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 32A. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Technology: Advanced Power MOSFET

N-channel transistor, 3.9A, 5.5A, 1000uA, 0.55 Ohms, TO-220FP, TO-220F, 400V. ID (T=100°C): 3.9A. ID (T=25°C): 5.5A. Idss (max): 1000uA. On-resistance Rds On: 0.55 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 400V. C(in): 1500pF. Cost): 178pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 40A. IDss (min): 250uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 12A, 17A, 250uA, 0.075 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 55V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 55V. C(in): 370pF. Cost): 140pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance, Fast Switching. Id(imp): 68A. IDss (min): 25uA. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 4.7 ns. Technology: HEXFET® Power MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, I-PAK, 60V, 14A. Housing: PCB soldering. Housing: I-PAK. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 14A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFU024NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 8.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.9 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 2.7A, 4.3A, 4.3A, 0.54 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 100V. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 4.3A. On-resistance Rds On: 0.54 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 100V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 17A. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HEXFET® Power MOSFET

N-channel transistor, 1.7A, 2.6A, 250uA, 1.5 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 200V. ID (T=100°C): 1.7A. ID (T=25°C): 2.6A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 200V. C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 10A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 14 ns. Td(on): 8.2 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 1.4A, 2.4A, 250uA, 3 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 500V. ID (T=100°C): 1.4A. ID (T=25°C): 2.4A. Idss (max): 250uA. On-resistance Rds On: 3 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 500V. C(in): 360pF. Cost): 92pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Fast Switching, Dynamic dv/dt Rating. Id(imp): 8A. IDss (min): 25uA. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 8 ns. Td(on): 33 ns. Technology: third-generation power MOSFET transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-251AA, 500V, 2.4A. Housing: PCB soldering. Housing: TO-251AA. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 2.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFU420PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 3 Ohms @ 1.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 33 ns. Ciss Gate Capacitance [pF]: 360pF. Maximum dissipation Ptot [W]: 42W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-251AA, 200V, 24A. Housing: PCB soldering. Housing: TO-251AA. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 24A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFU4620PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.78 Ohms @ 15A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 13.4 ns. Switch-off delay tf[nsec.]: 25.4 ns. Ciss Gate Capacitance [pF]: 1710pF. Maximum dissipation Ptot [W]: 144W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 1.2A, 2A, 500uA, 4.4 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 600V. ID (T=100°C): 1.2A. ID (T=25°C): 2A. Idss (max): 500uA. On-resistance Rds On: 4.4 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 600V. C(in): 350pF. Cost): 48pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 8A. IDss (min): 100uA. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 10 ns. Technology: V-MOS. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 10A, 17A, 250uA, 0.07 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 10A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.07 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 370pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 68A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 4.9 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 60V, 17A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 17A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFZ24NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 640pF. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 55V, 17A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 17A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZ24NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.07 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.9 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 45W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 20A, 29A, 250uA, 0.04 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 20A. ID (T=25°C): 29A. Idss (max): 250uA. On-resistance Rds On: 0.04 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 700pF. Cost): 240pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 57 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 100A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 68W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 31 ns. Td(on): 7 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 60V, 30A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 30A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFZ34NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 16A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 31 ns. Ciss Gate Capacitance [pF]: 700pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 35A, 49A, 250uA, 0.0175 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 35A. ID (T=25°C): 49A. Idss (max): 250uA. On-resistance Rds On: 0.0175 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 63us. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 94W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V