N-channel FETs and MOSFETs

N-channel transistor, 1.7A, 2.6A, 250uA, 1.5 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 200V. ID (T=100°C): 1.7A. ID (T=25°C): 2.6A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 200V. C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 10A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 14 ns. Td(on): 8.2 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 1.4A, 2.4A, 250uA, 3 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 500V. ID (T=100°C): 1.4A. ID (T=25°C): 2.4A. Idss (max): 250uA. On-resistance Rds On: 3 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 500V. C(in): 360pF. Cost): 92pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Fast Switching, Dynamic dv/dt Rating. Id(imp): 8A. IDss (min): 25uA. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 8 ns. Td(on): 33 ns. Technology: third-generation power MOSFET transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-251AA, 500V, 2.4A. Housing: PCB soldering. Housing: TO-251AA. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 2.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFU420PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 3 Ohms @ 1.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 33 ns. Ciss Gate Capacitance [pF]: 360pF. Maximum dissipation Ptot [W]: 42W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-251AA, 200V, 24A. Housing: PCB soldering. Housing: TO-251AA. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 24A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFU4620PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.78 Ohms @ 15A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 13.4 ns. Switch-off delay tf[nsec.]: 25.4 ns. Ciss Gate Capacitance [pF]: 1710pF. Maximum dissipation Ptot [W]: 144W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 1.2A, 2A, 500uA, 4.4 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 600V. ID (T=100°C): 1.2A. ID (T=25°C): 2A. Idss (max): 500uA. On-resistance Rds On: 4.4 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 600V. C(in): 350pF. Cost): 48pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 8A. IDss (min): 100uA. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 10 ns. Technology: V-MOS. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 10A, 17A, 250uA, 0.07 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 10A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.07 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 370pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 68A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 4.9 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 60V, 17A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 17A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFZ24NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 640pF. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 55V, 17A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 17A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZ24NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.07 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.9 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 45W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 20A, 29A, 250uA, 0.04 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 20A. ID (T=25°C): 29A. Idss (max): 250uA. On-resistance Rds On: 0.04 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 700pF. Cost): 240pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 57 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 100A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 68W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 31 ns. Td(on): 7 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 60V, 30A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 30A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFZ34NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 16A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 31 ns. Ciss Gate Capacitance [pF]: 700pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 35A, 49A, 250uA, 0.0175 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 35A. ID (T=25°C): 49A. Idss (max): 250uA. On-resistance Rds On: 0.0175 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 63us. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 94W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 60V, 50A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 50A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFZ44NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms @ 31A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 44 ns. Ciss Gate Capacitance [pF]: 1470pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 35A, 49A, 250uA, 17.5m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=100°C): 35A. ID (T=25°C): 49A. Idss (max): 250uA. On-resistance Rds On: 17.5m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 63 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 94W. RoHS: yes. Spec info: Ultra Low On-Resistance. Assembly/installation: surface-mounted component (SMD). Td(off): 44 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 55V, 49A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 49A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZ44NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0175 Ohms @ 25A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 44 ns. Ciss Gate Capacitance [pF]: 1470pF. Maximum dissipation Ptot [W]: 94W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 39A, 55A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 1812pF. Cost): 393pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 220A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 115W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 60V, 0.016 Ohms, TO-220AB. Drain-source voltage (Vds): 60V. On-resistance Rds On: 0.016 Ohms. Housing: TO-220AB. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 55A. Power: 115W

N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 107W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 55V. C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 50V, 50A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 50A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFZ46NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0165 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 1696pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 32A, 64A, 250uA, 0.014 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 32A. ID (T=25°C): 64A. Idss (max): 250uA. On-resistance Rds On: 0.014 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 68 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 210A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 34 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, TO-220AB, 55V, 64A, 55V, 0.014 Ohms. Housing: TO-220AB. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 64A. Drain-source voltage (Vds): 55V. On-resistance Rds On: 0.014 Ohms. Manufacturer's marking: IRFZ48NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 32A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 34 ns. Ciss Gate Capacitance [pF]: 1970pF. Maximum dissipation Ptot [W]: 130W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 64A. Power: 130W

N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Collector/emitter voltage Vceo: 600V. CE diode: no. Channel type: N. Function: Ultra Fast Speed IGBT (8-40KHz). Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 175 ns. Td(on): 27 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.59V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V

N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 42 ns. Function: UltraFast CoPack IGBT. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4BC30UD. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.95V. Maximum saturation voltage VCE(sat): 2.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V

N-channel transistor, 12A, TO-220, TO-220AB, 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 600V. C(in): 980pF. Cost): 71pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Function: power MOSFET transistor up to 150 kHz. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG 4BC30W. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: Vce(on)--2.1V (IC=12A), 2.45V (IC=23A). Assembly/installation: PCB through-hole mounting. Td(off): 99 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V

N-channel transistor, 16A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 16A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 920pF. Cost): 110pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Germanium diode: no. Collector current: 28A. Ic(pulse): 58A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: UltraFast IGBT transistor. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 60 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.21V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V