N-channel FETs and MOSFETs

N-channel transistor, 1.8A, 2.5A, 250uA, 0.10 Ohms, DIP, HVMDIP ( DIP-4 ), 60V. ID (T=100°C): 1.8A. ID (T=25°C): 2.5A. Idss (max): 250uA. On-resistance Rds On: 0.10 Ohms. Housing: DIP. Housing (according to data sheet): HVMDIP ( DIP-4 ). Voltage Vds(max): 60V. C(in): 870pF. Cost): 360pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 110 ns. Various: Dynamic dv/dt Rating. Type of transistor: MOSFET. Function: Fast Switching, Logic-Level Gate Drive. G-S Protection: no. Id(imp): 20A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 10V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering, DIP4, 60V, 2.5A. Housing: PCB soldering. Housing: DIP4. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 2.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRLD024PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 1.5A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 870pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 13A, 19A, 25uA, 0.042 Ohms, TO-220FP, TO-220FP, 55V. ID (T=100°C): 13A. ID (T=25°C): 19A. Idss (max): 25uA. On-resistance Rds On: 0.042 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 55V. C(in): 740pF. Cost): 150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 52 ns. Type of transistor: MOSFET. Function: Amplifier Applications Optimized for Class-D Audio. G-S Protection: no. Id(imp): 80A. IDss (min): 2uA. Pd (Power Dissipation, Max): 39W. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 5.7 ns. Technology: Digital Audio HEXSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

N-channel transistor, 10A, 14A, 25uA, 93m Ohms, TO-220FP, TO-220FP, 55V. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 25uA. On-resistance Rds On: 93m Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 55V. C(in): 660pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 57 ns. Type of transistor: MOSFET. Function: Amplifier Applications Optimized for Class-D Audio. G-S Protection: diode. Id(imp): 60A. IDss (min): 2uA. Number of terminals: 3. Pd (Power Dissipation, Max): 33W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 9.5 ns. Technology: Digital Audio HEXSFET. Operating temperature: -40...+170°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering (SMD), SOT-223, 55V, 2A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 2A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: LL014N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 1.2A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 5.1 ns. Switch-off delay tf[nsec.]: 14 ns. Ciss Gate Capacitance [pF]: 230pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 55V, 3.1A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 3.1A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL024. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.065 Ohms @ 3.1A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 7.4 ns. Switch-off delay tf[nsec.]: 18 ns. Ciss Gate Capacitance [pF]: 510pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 100V, 1.5A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 0.9A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 9.3 ns. Switch-off delay tf[nsec.]: 16 ns. Ciss Gate Capacitance [pF]: 250pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3.1A, 5.5A, 250uA, 0.45 Ohms, SOT-223 ( TO-226 ), SOT-223, 30 v. ID (T=100°C): 3.1A. ID (T=25°C): 5.5A. Idss (max): 250uA. On-resistance Rds On: 0.45 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 30 v. C(in): 530pF. Cost): 230pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 42 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 16A. IDss (min): 25uA. Pd (Power Dissipation, Max): 2.1W. Assembly/installation: surface-mounted component (SMD). Td(off): 6.9ns. Td(on): 7.4 ns. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2.4V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering (SMD), SOT-223, 30 v, 3.9A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 3.9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: LL2703. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ 3.1A. Gate breakdown voltage Ugs [V]: 2.4V. Switch-on time ton [nsec.]: 7.4 ns. Switch-off delay tf[nsec.]: 6.9ns. Ciss Gate Capacitance [pF]: 530pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 30 v, 3.9A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 3.9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: LL2703. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ 3.1A. Gate breakdown voltage Ugs [V]: 2.4V. Switch-on time ton [nsec.]: 7.4 ns. Switch-off delay tf[nsec.]: 6.9ns. Ciss Gate Capacitance [pF]: 530pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 55V, 3.8A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 3.8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: LL2705. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 3.8A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 6.2 ns. Switch-off delay tf[nsec.]: 35 ns. Ciss Gate Capacitance [pF]: 870pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3.4A, 4.2A, 25uA, 0.035 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 20V. ID (T=100°C): 3.4A. ID (T=25°C): 4.2A. Idss (max): 25uA. On-resistance Rds On: 0.035 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO-236AB ) ( Micro3 ). Voltage Vds(max): 20V. C(in): 740pF. Cost): 90pF. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 16 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 33A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 54 ns. Td(on): 7.5 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 12V. Vgs(th) min.: 0.6V

N-channel transistor, PCB soldering (SMD), SOT-23, 20V, 3.4A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 3.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1g. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.045 Ohms @ 4.2A. Gate breakdown voltage Ugs [V]: 1.2V. Switch-on time ton [nsec.]: 7.5 ns. Switch-off delay tf[nsec.]: 54 ns. Ciss Gate Capacitance [pF]: 740pF. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 0.93A, 1.2A, 25uA, 0.025 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 30 v. ID (T=100°C): 0.93A. ID (T=25°C): 1.2A. Idss (max): 25uA. On-resistance Rds On: 0.025 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO-236AB ) ( Micro3 ). Voltage Vds(max): 30 v. C(in): 85pF. Cost): 34pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 7.3A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 540mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 9 ns. Td(on): 3.9 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering (SMD), SOT-23, 30 v, 1.2A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 1.2A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: B. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 0.91A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 3.9 ns. Switch-off delay tf[nsec.]: 9 ns. Ciss Gate Capacitance [pF]: 85pF. Maximum dissipation Ptot [W]: 0.54W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, 30 v, 1.2A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 1.2A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 0.91A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 3.9 ns. Switch-off delay tf[nsec.]: 9 ns. Ciss Gate Capacitance [pF]: 85pF. Maximum dissipation Ptot [W]: 0.54W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, 30 v, 5A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms @ 5A. Gate breakdown voltage Ugs [V]: 1.1V. Switch-on time ton [nsec.]: 4.2 ns. Switch-off delay tf[nsec.]: 22 ns. Ciss Gate Capacitance [pF]: 650pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 12A, 17A, 250uA, 0.065 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 5V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.065 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 5V. C(in): 480pF. Cost): 130pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 72A. IDss (min): 25uA. Equivalents: IRLR024NPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 45W. RoHS: yes. Spec info: Gate control by logic level. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 7.1 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

ROHS: Yes. Housing: TO252AA, DPAK. Power: 38W. Assembly/installation: SMD. Type of transistor: N-MOSFET, HEXFET, logic level. Polarity: unipolar. Technology: HEXFET®. Properties of semiconductor: Logic Level. Drain-source voltage: 55V. Drain current: 17A. On-state resistance: 65m Ohms. Gate-source voltage: 16V, ±16V. Housing thermal resistance: 3.3K/W. Charge: 10nC

N-channel transistor, 7A, 10A, 250uA, 0.185 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V. ID (T=100°C): 7A. ID (T=25°C): 10A. Idss (max): 250uA. On-resistance Rds On: 0.185 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 100V. C(in): 440pF. Cost): 97pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 35A. IDss (min): 25uA. Equivalents: IRLR120NTRPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 48W. RoHS: yes. Spec info: Gate control by logic level. Assembly/installation: surface-mounted component (SMD). Td(off): 23 ns. Td(on): 4 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

N-channel transistor, 20A, 28A, 250uA, 0.04 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 20A. ID (T=25°C): 28A. Idss (max): 250uA. On-resistance Rds On: 0.04 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 880pF. Cost): 220pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 75. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 76 ns. Type of transistor: MOSFET. Function: Logic-Level Gate Drive, Fast Switching. G-S Protection: no. Id(imp): 110A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 68W. RoHS: yes. Spec info: low resistance R-on 0.040 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 8.9 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

N-channel transistor, 30A, 42A, 250uA, 0.027 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 30A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 0.027 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 1700pF. Cost): 400pF. Channel type: N. Conditioning: roll. Conditioning unit: 2000. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance, Fast Switching. G-S Protection: no. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 110W. RoHS: yes. Spec info: Gate control by logic level. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 55V, 42A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 42A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRLR2905PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.027 Ohms @ 42A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 26 ns. Ciss Gate Capacitance [pF]: 1700pF. Maximum dissipation Ptot [W]: 110W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 43A, 42A, 250uA, 11m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 43A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 11m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 1570pF. Cost): 230pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 22ms. Type of transistor: MOSFET. Function: Gate control by logic level. G-S Protection: no. Id(imp): 240A. IDss (min): 20uA. Equivalents: IRLR2905ZTRPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 110W. RoHS: yes. Spec info: AUTOMOTIVE MOSFET. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, 45A, 42A, 250uA, 0.105 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V. ID (T=100°C): 45A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 0.105 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 100V. C(in): 3980pF. Cost): 170pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 34-51 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance, Fast Switching. G-S Protection: no. Id(imp): 250A. IDss (min): 25uA. Equivalents: IRLR3110ZPbF. Number of terminals: 2. Pd (Power Dissipation, Max): 79W. RoHS: yes. Spec info: Ultra Low On-Resistance. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 7.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: ±16. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V