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Semiconductors Transistors
N-channel FETs and MOSFETs

N-channel FETs and MOSFETs

1241 products available
Products per page :
1...303132 3334...50
Quantity in stock : 48
IRG4PC30UD

IRG4PC30UD

N-channel transistor, 12A, TO-247, TO-247 ( AC ), 600V. ID (T=100°C): 12A. Housing: TO-247. Housing...
IRG4PC30UD
N-channel transistor, 12A, TO-247, TO-247 ( AC ), 600V. ID (T=100°C): 12A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Function: ULTRA FAST. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4PC30UD. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.95V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC30UD
N-channel transistor, 12A, TO-247, TO-247 ( AC ), 600V. ID (T=100°C): 12A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Function: ULTRA FAST. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4PC30UD. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.95V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
13.66$ VAT incl.
(12.64$ excl. VAT)
13.66$
Quantity in stock : 83
IRG4PC40FDPBF

IRG4PC40FDPBF

N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing ...
IRG4PC40FDPBF
N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. RoHS: yes. C(in): 2200pF. Cost): 140pF. CE diode: yes. Channel type: N. Conditioning: TO-247AC. Conditioning unit: PCB through-hole mounting. Trr Diode (Min.): 42 ns. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 49A. Ic(pulse): 84A. Marking on the case: 230 ns. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. Assembly/installation: PCB through-hole mounting. Td(off): 230 ns. Td(on): 63 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.85V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC40FDPBF
N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. RoHS: yes. C(in): 2200pF. Cost): 140pF. CE diode: yes. Channel type: N. Conditioning: TO-247AC. Conditioning unit: PCB through-hole mounting. Trr Diode (Min.): 42 ns. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 49A. Ic(pulse): 84A. Marking on the case: 230 ns. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. Assembly/installation: PCB through-hole mounting. Td(off): 230 ns. Td(on): 63 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.85V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
12.70$ VAT incl.
(11.75$ excl. VAT)
12.70$
Quantity in stock : 70
IRG4PC40K

IRG4PC40K

N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing ...
IRG4PC40K
N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 42A. Ic(pulse): 84A. Marking on the case: G4PC40K. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: insulated gate bipolar transistor (IGBT). Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC40K
N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 42A. Ic(pulse): 84A. Marking on the case: G4PC40K. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: insulated gate bipolar transistor (IGBT). Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
10.10$ VAT incl.
(9.34$ excl. VAT)
10.10$
Quantity in stock : 51
IRG4PC40KD

IRG4PC40KD

N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing ...
IRG4PC40KD
N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 42 ns. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 42A. Ic(pulse): 84A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 53 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.6V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC40KD
N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 42 ns. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 42A. Ic(pulse): 84A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 53 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.6V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
10.11$ VAT incl.
(9.35$ excl. VAT)
10.11$
Quantity in stock : 3
IRG4PC40U

IRG4PC40U

N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing ...
IRG4PC40U
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 2100pF. Cost): 140pF. CE diode: no. Channel type: N. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 34 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.72V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V
IRG4PC40U
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 2100pF. Cost): 140pF. CE diode: no. Channel type: N. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 34 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.72V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V
Set of 1
10.36$ VAT incl.
(9.58$ excl. VAT)
10.36$
Out of stock
IRG4PC40UD

IRG4PC40UD

N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing ...
IRG4PC40UD
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 2100pF. Cost): 140pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 54 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.72V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC40UD
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 2100pF. Cost): 140pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 54 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.72V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
11.98$ VAT incl.
(11.08$ excl. VAT)
11.98$
Quantity in stock : 10
IRG4PC40W

IRG4PC40W

N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing ...
IRG4PC40W
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1900pF. Cost): 140pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 27 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.05V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC40W
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1900pF. Cost): 140pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 27 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.05V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
13.18$ VAT incl.
(12.19$ excl. VAT)
13.18$
Out of stock
IRG4PC50KPBF

IRG4PC50KPBF

N-channel transistor, 30A, TO-247, TO-247AC, 600V. Ic(T=100°C): 30A. Housing: TO-247. Housing (acco...
IRG4PC50KPBF
N-channel transistor, 30A, TO-247, TO-247AC, 600V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. C(in): 3200pF. Cost): 370pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: High Speed ​​Switching. Germanium diode: no. Collector current: 52A. Ic(pulse): 104A. Marking on the case: IRG4PC50K. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 38 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.84V. Maximum saturation voltage VCE(sat): 2.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC50KPBF
N-channel transistor, 30A, TO-247, TO-247AC, 600V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. C(in): 3200pF. Cost): 370pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: High Speed ​​Switching. Germanium diode: no. Collector current: 52A. Ic(pulse): 104A. Marking on the case: IRG4PC50K. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 38 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.84V. Maximum saturation voltage VCE(sat): 2.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
9.89$ VAT incl.
(9.15$ excl. VAT)
9.89$
Out of stock
IRG4PC50U

IRG4PC50U

N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing ...
IRG4PC50U
N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 4000pF. Cost): 250pF. CE diode: no. Channel type: N. Germanium diode: no. Collector current: 55A. Ic(pulse): 220A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 230 ns. Td(on): 31 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 1.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC50U
N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 4000pF. Cost): 250pF. CE diode: no. Channel type: N. Germanium diode: no. Collector current: 55A. Ic(pulse): 220A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 230 ns. Td(on): 31 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 1.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
12.62$ VAT incl.
(11.67$ excl. VAT)
12.62$
Out of stock
IRG4PC50UD

IRG4PC50UD

N-channel transistor, 27A, TO-247, TO-247AC, 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (acco...
IRG4PC50UD
N-channel transistor, 27A, TO-247, TO-247AC, 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. C(in): 4000pF. Cost): 250pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 50 ns. Function: UltraFast CoPack IGBT. Germanium diode: no. Collector current: 55A. Ic(pulse): 220A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 46 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.65V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V
IRG4PC50UD
N-channel transistor, 27A, TO-247, TO-247AC, 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. C(in): 4000pF. Cost): 250pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 50 ns. Function: UltraFast CoPack IGBT. Germanium diode: no. Collector current: 55A. Ic(pulse): 220A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 46 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.65V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V
Set of 1
16.19$ VAT incl.
(14.98$ excl. VAT)
16.19$
Quantity in stock : 4
IRG4PC60FP

IRG4PC60FP

N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing ...
IRG4PC60FP
N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 6050pF. Cost): 360pF. CE diode: no. Channel type: N. Function: 'Fast Speed ​​IGBT'. Germanium diode: no. Collector current: 90A. Ic(pulse): 360A. Number of terminals: 3. Pd (Power Dissipation, Max): 520W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 310 ns. Td(on): 42 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC60FP
N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 6050pF. Cost): 360pF. CE diode: no. Channel type: N. Function: 'Fast Speed ​​IGBT'. Germanium diode: no. Collector current: 90A. Ic(pulse): 360A. Number of terminals: 3. Pd (Power Dissipation, Max): 520W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 310 ns. Td(on): 42 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
17.84$ VAT incl.
(16.50$ excl. VAT)
17.84$
Quantity in stock : 35
IRG4PH40U

IRG4PH40U

N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 21A. Housing: TO-2...
IRG4PH40U
N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 21A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 1800pF. Cost): 120pF. CE diode: no. Channel type: N. Function: Up to 40kHz in hard switching,>200kHz res.mode. Germanium diode: no. Collector current: 41A. Ic(pulse): 82A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.43V. Maximum saturation voltage VCE(sat): 3.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PH40U
N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 21A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 1800pF. Cost): 120pF. CE diode: no. Channel type: N. Function: Up to 40kHz in hard switching,>200kHz res.mode. Germanium diode: no. Collector current: 41A. Ic(pulse): 82A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.43V. Maximum saturation voltage VCE(sat): 3.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
10.01$ VAT incl.
(9.26$ excl. VAT)
10.01$
Quantity in stock : 32
IRG4PH50K

IRG4PH50K

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-2...
IRG4PH50K
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 2800pF. Cost): 140pF. CE diode: no. Channel type: N. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 90A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: td (on) 36ns, td(off) 200ns, TJ=25°C. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 36ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PH50K
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 2800pF. Cost): 140pF. CE diode: no. Channel type: N. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 90A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: td (on) 36ns, td(off) 200ns, TJ=25°C. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 36ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
13.22$ VAT incl.
(12.23$ excl. VAT)
13.22$
Quantity in stock : 12
IRG4PH50KD

IRG4PH50KD

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V. Ic(T=100°C): 24A. Housing: TO-2...
IRG4PH50KD
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1220V. C(in): 2800pF. Cost): 140pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 90 ns. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 90A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 87 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PH50KD
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1220V. C(in): 2800pF. Cost): 140pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 90 ns. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 90A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 87 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
26.61$ VAT incl.
(24.62$ excl. VAT)
26.61$
Quantity in stock : 36
IRG4PH50U

IRG4PH50U

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-2...
IRG4PH50U
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 3600pF. Cost): 160pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 180A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 180A. Marking on the case: IRG4PH50U. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: td(on) 35ns, td(off) 200ns, TJ=25°C. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 35 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.56V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PH50U
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 3600pF. Cost): 160pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 180A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 180A. Marking on the case: IRG4PH50U. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: td(on) 35ns, td(off) 200ns, TJ=25°C. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 35 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.56V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
14.12$ VAT incl.
(13.06$ excl. VAT)
14.12$
Out of stock
IRG4PH50UD

IRG4PH50UD

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-2...
IRG4PH50UD
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 3600pF. Cost): 160pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 90 ns. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 180A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 180A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 47 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.56V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PH50UD
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 3600pF. Cost): 160pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 90 ns. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 180A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 180A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 47 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.56V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
16.22$ VAT incl.
(15.00$ excl. VAT)
16.22$
Quantity in stock : 48
IRGB15B60KD

IRGB15B60KD

N-channel transistor, 15A, TO-220, TO-220AC, 600V. Ic(T=100°C): 15A. Housing: TO-220. Housing (acco...
IRGB15B60KD
N-channel transistor, 15A, TO-220, TO-220AC, 600V. Ic(T=100°C): 15A. Housing: TO-220. Housing (according to data sheet): TO-220AC. Collector/emitter voltage Vceo: 600V. C(in): 850pF. Cost): 75pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 92 ns. Germanium diode: no. Collector current: 31A. Ic(pulse): 62A. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Spec info: Ultrafast Soft Recovery Diode. Assembly/installation: PCB through-hole mounting. Td(off): 184 ns. Td(on): 34 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 2.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 5.5V
IRGB15B60KD
N-channel transistor, 15A, TO-220, TO-220AC, 600V. Ic(T=100°C): 15A. Housing: TO-220. Housing (according to data sheet): TO-220AC. Collector/emitter voltage Vceo: 600V. C(in): 850pF. Cost): 75pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 92 ns. Germanium diode: no. Collector current: 31A. Ic(pulse): 62A. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Spec info: Ultrafast Soft Recovery Diode. Assembly/installation: PCB through-hole mounting. Td(off): 184 ns. Td(on): 34 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 2.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 5.5V
Set of 1
10.39$ VAT incl.
(9.61$ excl. VAT)
10.39$
Quantity in stock : 12
IRGP4068D

IRGP4068D

N-channel transistor, 48A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 48A. Housing: TO-247. Housing ...
IRGP4068D
N-channel transistor, 48A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 48A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 3025pF. Cost): 245pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Germanium diode: no. Collector current: 90A. Ic(pulse): 144A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 145 ns. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.65V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 4 v
IRGP4068D
N-channel transistor, 48A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 48A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 3025pF. Cost): 245pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Germanium diode: no. Collector current: 90A. Ic(pulse): 144A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 145 ns. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.65V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 4 v
Set of 1
17.80$ VAT incl.
(16.47$ excl. VAT)
17.80$
Quantity in stock : 31
IRGP4086

IRGP4086

N-channel transistor, 40A, TO-247, TO-247 ( AC ), 300V. Ic(T=100°C): 40A. Housing: TO-247. Housing ...
IRGP4086
N-channel transistor, 40A, TO-247, TO-247 ( AC ), 300V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 300V. C(in): 2250pF. Cost): 110pF. CE diode: no. Channel type: N. Conditioning unit: 25. Germanium diode: no. Collector current: 70A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 112 ns. Td(on): 36ns. Operating temperature: -40...+140°C. Saturation voltage VCE(sat): 1.29V. Maximum saturation voltage VCE(sat): 2.57V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.6V. Gate/emitter voltage VGE(th)max.: 5V
IRGP4086
N-channel transistor, 40A, TO-247, TO-247 ( AC ), 300V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 300V. C(in): 2250pF. Cost): 110pF. CE diode: no. Channel type: N. Conditioning unit: 25. Germanium diode: no. Collector current: 70A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 112 ns. Td(on): 36ns. Operating temperature: -40...+140°C. Saturation voltage VCE(sat): 1.29V. Maximum saturation voltage VCE(sat): 2.57V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.6V. Gate/emitter voltage VGE(th)max.: 5V
Set of 1
10.62$ VAT incl.
(9.82$ excl. VAT)
10.62$
Out of stock
IRGS14C40LPBF

IRGS14C40LPBF

N-channel transistor, 14A, TO-263, 400V. Ic(T=100°C): 14A. Housing (according to data sheet): TO-26...
IRGS14C40LPBF
N-channel transistor, 14A, TO-263, 400V. Ic(T=100°C): 14A. Housing (according to data sheet): TO-263. Collector/emitter voltage Vceo: 400V. C(in): 825pF. Cost): 150pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Germanium diode: no. Collector current: 20A. Note: > 6KV ESD Gate Protection. Marking on the case: GS14C40L. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Spec info: IGBT with on-chip Gate-Emitter and Gate-Collector. Assembly/installation: surface-mounted component (SMD). Td(off): 8.3 ns. Td(on): 1.35 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 1.3V. Gate/emitter voltage VGE(th)max.: 2.2V
IRGS14C40LPBF
N-channel transistor, 14A, TO-263, 400V. Ic(T=100°C): 14A. Housing (according to data sheet): TO-263. Collector/emitter voltage Vceo: 400V. C(in): 825pF. Cost): 150pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Germanium diode: no. Collector current: 20A. Note: > 6KV ESD Gate Protection. Marking on the case: GS14C40L. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Spec info: IGBT with on-chip Gate-Emitter and Gate-Collector. Assembly/installation: surface-mounted component (SMD). Td(off): 8.3 ns. Td(on): 1.35 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 1.3V. Gate/emitter voltage VGE(th)max.: 2.2V
Set of 1
11.63$ VAT incl.
(10.76$ excl. VAT)
11.63$
Quantity in stock : 49
IRL1004S

IRL1004S

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 40V, 130A. Housing: PCB soldering (SMD)....
IRL1004S
N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 40V, 130A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 130A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L1004S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0065 Ohms @ 78A. Gate breakdown voltage Ugs [V]: 2.7V. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 5330pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
IRL1004S
N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 40V, 130A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 130A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L1004S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0065 Ohms @ 78A. Gate breakdown voltage Ugs [V]: 2.7V. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 5330pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
5.55$ VAT incl.
(5.13$ excl. VAT)
5.55$
Quantity in stock : 81
IRL1404

IRL1404

N-channel transistor, 110A, 160A, 250uA, 0.004 Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 110A. ID ...
IRL1404
N-channel transistor, 110A, 160A, 250uA, 0.004 Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 110A. ID (T=25°C): 160A. Idss (max): 250uA. On-resistance Rds On: 0.004 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 6590pF. Cost): 1710pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 63 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 640A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V
IRL1404
N-channel transistor, 110A, 160A, 250uA, 0.004 Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 110A. ID (T=25°C): 160A. Idss (max): 250uA. On-resistance Rds On: 0.004 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 6590pF. Cost): 1710pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 63 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 640A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V
Set of 1
5.47$ VAT incl.
(5.06$ excl. VAT)
5.47$
Quantity in stock : 15
IRL1404PBF

IRL1404PBF

N-channel transistor, 40V, 0.004 Ohms, TO-220AB. Drain-source voltage (Vds): 40V. On-resistance Rds ...
IRL1404PBF
N-channel transistor, 40V, 0.004 Ohms, TO-220AB. Drain-source voltage (Vds): 40V. On-resistance Rds On: 0.004 Ohms. Housing: TO-220AB. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 160A. Power: 200W
IRL1404PBF
N-channel transistor, 40V, 0.004 Ohms, TO-220AB. Drain-source voltage (Vds): 40V. On-resistance Rds On: 0.004 Ohms. Housing: TO-220AB. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 160A. Power: 200W
Set of 1
4.26$ VAT incl.
(3.94$ excl. VAT)
4.26$
Quantity in stock : 111
IRL1404Z

IRL1404Z

N-channel transistor, 140A, 200A, 200A, 0.005 Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 140A. ID (...
IRL1404Z
N-channel transistor, 140A, 200A, 200A, 0.005 Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 140A. ID (T=25°C): 200A. Idss (max): 200A. On-resistance Rds On: 0.005 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 790A. Pd (Power Dissipation, Max): 230W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Function: Fast Switching, Logic-Level Gate Drive
IRL1404Z
N-channel transistor, 140A, 200A, 200A, 0.005 Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 140A. ID (T=25°C): 200A. Idss (max): 200A. On-resistance Rds On: 0.005 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 790A. Pd (Power Dissipation, Max): 230W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Function: Fast Switching, Logic-Level Gate Drive
Set of 1
4.14$ VAT incl.
(3.83$ excl. VAT)
4.14$
Quantity in stock : 42
IRL1404ZPBF

IRL1404ZPBF

N-channel transistor, PCB soldering, TO-220AB, 40V, 140A. Housing: PCB soldering. Housing: TO-220AB....
IRL1404ZPBF
N-channel transistor, PCB soldering, TO-220AB, 40V, 140A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 140A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL1404ZPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.003 Ohms @ 75A. Gate breakdown voltage Ugs [V]: 2.7V. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 5080pF. Maximum dissipation Ptot [W]: 230W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
IRL1404ZPBF
N-channel transistor, PCB soldering, TO-220AB, 40V, 140A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 140A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL1404ZPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.003 Ohms @ 75A. Gate breakdown voltage Ugs [V]: 2.7V. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 5080pF. Maximum dissipation Ptot [W]: 230W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
6.48$ VAT incl.
(5.99$ excl. VAT)
6.48$
1...303132 3334...50

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