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N-channel FETs and MOSFETs (page 30) - RPtronics
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Semiconductors Transistors
N-channel FETs and MOSFETs

N-channel FETs and MOSFETs

1186 products available
Products per page :
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Quantity in stock : 148
IRFZ44NPBF

IRFZ44NPBF

N-channel transistor, 55V, TO220AB. Vdss (Drain to Source Voltage): 55V. Housing: TO220AB. Series: H...
IRFZ44NPBF
N-channel transistor, 55V, TO220AB. Vdss (Drain to Source Voltage): 55V. Housing: TO220AB. Series: HEXFET. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 49A. Drive Voltage: 10V. Rds On (Max) @ Id, Vgs: 17.5m Ohms / 25A / 10V. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 94W. Mounting Type: THT
IRFZ44NPBF
N-channel transistor, 55V, TO220AB. Vdss (Drain to Source Voltage): 55V. Housing: TO220AB. Series: HEXFET. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 49A. Drive Voltage: 10V. Rds On (Max) @ Id, Vgs: 17.5m Ohms / 25A / 10V. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 94W. Mounting Type: THT
Set of 1
3.63$ VAT incl.
(3.36$ excl. VAT)
3.63$
Quantity in stock : 24
IRFZ44NS

IRFZ44NS

N-channel transistor, 35A, 49A, 250uA, 17.5m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=10...
IRFZ44NS
N-channel transistor, 35A, 49A, 250uA, 17.5m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=100°C): 35A. ID (T=25°C): 49A. Idss (max): 250uA. On-resistance Rds On: 17.5m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 63 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 94W. RoHS: yes. Spec info: Ultra Low On-Resistance. Assembly/installation: surface-mounted component (SMD). Td(off): 44 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFZ44NS
N-channel transistor, 35A, 49A, 250uA, 17.5m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=100°C): 35A. ID (T=25°C): 49A. Idss (max): 250uA. On-resistance Rds On: 17.5m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 63 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 94W. RoHS: yes. Spec info: Ultra Low On-Resistance. Assembly/installation: surface-mounted component (SMD). Td(off): 44 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
2.78$ VAT incl.
(2.57$ excl. VAT)
2.78$
Quantity in stock : 136
IRFZ44NSPBF

IRFZ44NSPBF

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 55V, 49A. Housing: PCB soldering (SMD). ...
IRFZ44NSPBF
N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 55V, 49A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 49A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZ44NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0175 Ohms @ 25A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 44 ns. Ciss Gate Capacitance [pF]: 1470pF. Maximum dissipation Ptot [W]: 94W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
IRFZ44NSPBF
N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 55V, 49A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 49A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZ44NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0175 Ohms @ 25A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 44 ns. Ciss Gate Capacitance [pF]: 1470pF. Maximum dissipation Ptot [W]: 94W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
4.62$ VAT incl.
(4.27$ excl. VAT)
4.62$
Quantity in stock : 259
IRFZ44V

IRFZ44V

N-channel transistor, 39A, 55A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 39A. ID (T=...
IRFZ44V
N-channel transistor, 39A, 55A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 1812pF. Cost): 393pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 220A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 115W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFZ44V
N-channel transistor, 39A, 55A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 1812pF. Cost): 393pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 220A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 115W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
2.39$ VAT incl.
(2.21$ excl. VAT)
2.39$
Quantity in stock : 137
IRFZ46N

IRFZ46N

N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 37A. ID (T=...
IRFZ46N
N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 107W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
IRFZ46N
N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 107W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
Set of 1
1.96$ VAT incl.
(1.81$ excl. VAT)
1.96$
Quantity in stock : 11
IRFZ46NL

IRFZ46NL

N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V. ID (T=100°C): 37...
IRFZ46NL
N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 55V. C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
IRFZ46NL
N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 55V. C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
Set of 1
2.08$ VAT incl.
(1.92$ excl. VAT)
2.08$
Quantity in stock : 211
IRFZ46NPBF

IRFZ46NPBF

N-channel transistor, 55V, TO220AB. Vdss (Drain to Source Voltage): 55V. Housing: TO220AB. Operating...
IRFZ46NPBF
N-channel transistor, 55V, TO220AB. Vdss (Drain to Source Voltage): 55V. Housing: TO220AB. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Series: IRFZ. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 53A. Drive Voltage: 10V. Rds On (Max) @ Id, Vgs: 16.5m Ohms / 28A / 10V. Vgs(th) (Max) @ Id: 3. Qg (Total Gate Charge, Max @ Vgs): IRFZ46NPBF. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 107W. Operating temperature: 0.0165 Ohms @ 28A. Mounting Type: THT. Features: 52 ns. Information: 1696pF. MSL: 150W
IRFZ46NPBF
N-channel transistor, 55V, TO220AB. Vdss (Drain to Source Voltage): 55V. Housing: TO220AB. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Series: IRFZ. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 53A. Drive Voltage: 10V. Rds On (Max) @ Id, Vgs: 16.5m Ohms / 28A / 10V. Vgs(th) (Max) @ Id: 3. Qg (Total Gate Charge, Max @ Vgs): IRFZ46NPBF. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 107W. Operating temperature: 0.0165 Ohms @ 28A. Mounting Type: THT. Features: 52 ns. Information: 1696pF. MSL: 150W
Set of 1
2.82$ VAT incl.
(2.61$ excl. VAT)
2.82$
Quantity in stock : 170
IRFZ48N

IRFZ48N

N-channel transistor, 32A, 64A, 250uA, 0.014 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 32A. ID (T=...
IRFZ48N
N-channel transistor, 32A, 64A, 250uA, 0.014 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 32A. ID (T=25°C): 64A. Idss (max): 250uA. On-resistance Rds On: 0.014 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 68 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 210A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 34 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFZ48N
N-channel transistor, 32A, 64A, 250uA, 0.014 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 32A. ID (T=25°C): 64A. Idss (max): 250uA. On-resistance Rds On: 0.014 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 68 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 210A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 34 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
2.43$ VAT incl.
(2.25$ excl. VAT)
2.43$
Quantity in stock : 7
IRFZ48NPBF

IRFZ48NPBF

N-channel transistor, 55V, TO220AB. Vdss (Drain to Source Voltage): 55V. Housing: TO220AB. Polarity:...
IRFZ48NPBF
N-channel transistor, 55V, TO220AB. Vdss (Drain to Source Voltage): 55V. Housing: TO220AB. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 64A. Drive Voltage: 10V. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 130W. Mounting Type: THT
IRFZ48NPBF
N-channel transistor, 55V, TO220AB. Vdss (Drain to Source Voltage): 55V. Housing: TO220AB. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 64A. Drive Voltage: 10V. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 130W. Mounting Type: THT
Set of 1
3.06$ VAT incl.
(2.83$ excl. VAT)
3.06$
Quantity in stock : 69
IRG4BC30U

IRG4BC30U

N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing ...
IRG4BC30U
N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Collector/emitter voltage Vceo: 600V. CE diode: no. Channel type: N. Function: Ultra Fast Speed IGBT (8-40KHz). Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 175 ns. Td(on): 27 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.59V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V
IRG4BC30U
N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Collector/emitter voltage Vceo: 600V. CE diode: no. Channel type: N. Function: Ultra Fast Speed IGBT (8-40KHz). Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 175 ns. Td(on): 27 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.59V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V
Set of 1
6.10$ VAT incl.
(5.64$ excl. VAT)
6.10$
Quantity in stock : 84
IRG4BC30UD

IRG4BC30UD

N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing ...
IRG4BC30UD
N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 42 ns. Function: UltraFast CoPack IGBT. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4BC30UD. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.95V. Maximum saturation voltage VCE(sat): 2.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4BC30UD
N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 42 ns. Function: UltraFast CoPack IGBT. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4BC30UD. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.95V. Maximum saturation voltage VCE(sat): 2.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
11.59$ VAT incl.
(10.72$ excl. VAT)
11.59$
Quantity in stock : 35
IRG4BC30W

IRG4BC30W

N-channel transistor, 12A, TO-220, TO-220AB, 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (acco...
IRG4BC30W
N-channel transistor, 12A, TO-220, TO-220AB, 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 600V. C(in): 980pF. Cost): 71pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Function: power MOSFET transistor up to 150 kHz. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG 4BC30W. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: Vce(on)--2.1V (IC=12A), 2.45V (IC=23A). Assembly/installation: PCB through-hole mounting. Td(off): 99 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4BC30W
N-channel transistor, 12A, TO-220, TO-220AB, 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 600V. C(in): 980pF. Cost): 71pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Function: power MOSFET transistor up to 150 kHz. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG 4BC30W. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: Vce(on)--2.1V (IC=12A), 2.45V (IC=23A). Assembly/installation: PCB through-hole mounting. Td(off): 99 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
7.88$ VAT incl.
(7.29$ excl. VAT)
7.88$
Quantity in stock : 16
IRG4PC30KD

IRG4PC30KD

N-channel transistor, 16A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 16A. Housing: TO-247. Housing ...
IRG4PC30KD
N-channel transistor, 16A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 16A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 920pF. Cost): 110pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Germanium diode: no. Collector current: 28A. Ic(pulse): 58A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: UltraFast IGBT transistor. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 60 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.21V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC30KD
N-channel transistor, 16A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 16A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 920pF. Cost): 110pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Germanium diode: no. Collector current: 28A. Ic(pulse): 58A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: UltraFast IGBT transistor. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 60 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.21V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
6.84$ VAT incl.
(6.33$ excl. VAT)
6.84$
Quantity in stock : 48
IRG4PC30UD

IRG4PC30UD

N-channel transistor, 12A, TO-247, TO-247 ( AC ), 600V. ID (T=100°C): 12A. Housing: TO-247. Housing...
IRG4PC30UD
N-channel transistor, 12A, TO-247, TO-247 ( AC ), 600V. ID (T=100°C): 12A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Function: ULTRA FAST. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4PC30UD. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.95V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC30UD
N-channel transistor, 12A, TO-247, TO-247 ( AC ), 600V. ID (T=100°C): 12A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Function: ULTRA FAST. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4PC30UD. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.95V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
13.66$ VAT incl.
(12.64$ excl. VAT)
13.66$
Quantity in stock : 35
IRG4PC40FDPBF

IRG4PC40FDPBF

N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing ...
IRG4PC40FDPBF
N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. RoHS: yes. C(in): 2200pF. Cost): 140pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 42 ns. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 49A. Ic(pulse): 84A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. Assembly/installation: PCB through-hole mounting. Td(off): 230 ns. Td(on): 63 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.85V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC40FDPBF
N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. RoHS: yes. C(in): 2200pF. Cost): 140pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 42 ns. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 49A. Ic(pulse): 84A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. Assembly/installation: PCB through-hole mounting. Td(off): 230 ns. Td(on): 63 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.85V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
13.25$ VAT incl.
(12.26$ excl. VAT)
13.25$
Quantity in stock : 69
IRG4PC40K

IRG4PC40K

N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing ...
IRG4PC40K
N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 42A. Ic(pulse): 84A. Marking on the case: G4PC40K. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: insulated gate bipolar transistor (IGBT). Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC40K
N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 42A. Ic(pulse): 84A. Marking on the case: G4PC40K. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: insulated gate bipolar transistor (IGBT). Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
10.10$ VAT incl.
(9.34$ excl. VAT)
10.10$
Quantity in stock : 51
IRG4PC40KD

IRG4PC40KD

N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing ...
IRG4PC40KD
N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 42 ns. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 42A. Ic(pulse): 84A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 53 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.6V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC40KD
N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 42 ns. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 42A. Ic(pulse): 84A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 53 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.6V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
10.11$ VAT incl.
(9.35$ excl. VAT)
10.11$
Quantity in stock : 3
IRG4PC40U

IRG4PC40U

N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing ...
IRG4PC40U
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 2100pF. Cost): 140pF. CE diode: no. Channel type: N. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 34 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.72V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V
IRG4PC40U
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 2100pF. Cost): 140pF. CE diode: no. Channel type: N. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 34 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.72V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V
Set of 1
10.36$ VAT incl.
(9.58$ excl. VAT)
10.36$
Quantity in stock : 10
IRG4PC40W

IRG4PC40W

N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing ...
IRG4PC40W
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1900pF. Cost): 140pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 27 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.05V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC40W
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1900pF. Cost): 140pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 27 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.05V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
13.18$ VAT incl.
(12.19$ excl. VAT)
13.18$
Quantity in stock : 4
IRG4PC60FP

IRG4PC60FP

N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing ...
IRG4PC60FP
N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 6050pF. Cost): 360pF. CE diode: no. Channel type: N. Function: 'Fast Speed ​​IGBT'. Germanium diode: no. Collector current: 90A. Ic(pulse): 360A. Number of terminals: 3. Pd (Power Dissipation, Max): 520W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 310 ns. Td(on): 42 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC60FP
N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 6050pF. Cost): 360pF. CE diode: no. Channel type: N. Function: 'Fast Speed ​​IGBT'. Germanium diode: no. Collector current: 90A. Ic(pulse): 360A. Number of terminals: 3. Pd (Power Dissipation, Max): 520W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 310 ns. Td(on): 42 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
17.84$ VAT incl.
(16.50$ excl. VAT)
17.84$
Quantity in stock : 35
IRG4PH40U

IRG4PH40U

N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 21A. Housing: TO-2...
IRG4PH40U
N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 21A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 1800pF. Cost): 120pF. CE diode: no. Channel type: N. Function: Up to 40kHz in hard switching,>200kHz res.mode. Germanium diode: no. Collector current: 41A. Ic(pulse): 82A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.43V. Maximum saturation voltage VCE(sat): 3.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PH40U
N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 21A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 1800pF. Cost): 120pF. CE diode: no. Channel type: N. Function: Up to 40kHz in hard switching,>200kHz res.mode. Germanium diode: no. Collector current: 41A. Ic(pulse): 82A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.43V. Maximum saturation voltage VCE(sat): 3.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
10.01$ VAT incl.
(9.26$ excl. VAT)
10.01$
Quantity in stock : 32
IRG4PH50K

IRG4PH50K

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-2...
IRG4PH50K
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 2800pF. Cost): 140pF. CE diode: no. Channel type: N. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 90A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: td (on) 36ns, td(off) 200ns, TJ=25°C. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 36ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PH50K
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 2800pF. Cost): 140pF. CE diode: no. Channel type: N. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 90A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: td (on) 36ns, td(off) 200ns, TJ=25°C. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 36ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
13.22$ VAT incl.
(12.23$ excl. VAT)
13.22$
Quantity in stock : 12
IRG4PH50KD

IRG4PH50KD

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V. Ic(T=100°C): 24A. Housing: TO-2...
IRG4PH50KD
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1220V. C(in): 2800pF. Cost): 140pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 90 ns. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 90A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 87 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PH50KD
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1220V. C(in): 2800pF. Cost): 140pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 90 ns. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 90A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 87 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
26.61$ VAT incl.
(24.62$ excl. VAT)
26.61$
Quantity in stock : 36
IRG4PH50U

IRG4PH50U

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-2...
IRG4PH50U
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 3600pF. Cost): 160pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 180A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 180A. Marking on the case: IRG4PH50U. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: td(on) 35ns, td(off) 200ns, TJ=25°C. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 35 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.56V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PH50U
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 3600pF. Cost): 160pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 180A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 180A. Marking on the case: IRG4PH50U. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: td(on) 35ns, td(off) 200ns, TJ=25°C. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 35 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.56V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
14.12$ VAT incl.
(13.06$ excl. VAT)
14.12$
Quantity in stock : 48
IRGB15B60KD

IRGB15B60KD

N-channel transistor, 15A, TO-220, TO-220AC, 600V. Ic(T=100°C): 15A. Housing: TO-220. Housing (acco...
IRGB15B60KD
N-channel transistor, 15A, TO-220, TO-220AC, 600V. Ic(T=100°C): 15A. Housing: TO-220. Housing (according to data sheet): TO-220AC. Collector/emitter voltage Vceo: 600V. C(in): 850pF. Cost): 75pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 92 ns. Germanium diode: no. Collector current: 31A. Ic(pulse): 62A. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Spec info: Ultrafast Soft Recovery Diode. Assembly/installation: PCB through-hole mounting. Td(off): 184 ns. Td(on): 34 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 2.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 5.5V
IRGB15B60KD
N-channel transistor, 15A, TO-220, TO-220AC, 600V. Ic(T=100°C): 15A. Housing: TO-220. Housing (according to data sheet): TO-220AC. Collector/emitter voltage Vceo: 600V. C(in): 850pF. Cost): 75pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 92 ns. Germanium diode: no. Collector current: 31A. Ic(pulse): 62A. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Spec info: Ultrafast Soft Recovery Diode. Assembly/installation: PCB through-hole mounting. Td(off): 184 ns. Td(on): 34 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 2.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 5.5V
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