Warning: Undefined array key "9f845db12005dc3a93d18a181f3c0c95" in /var/www/vhosts/rptronics.com/httpdocs/site/php/viewProductsWithFilters.php on line 52

Warning: Trying to access array offset on null in /var/www/vhosts/rptronics.com/httpdocs/site/php/viewProductsWithFilters.php on line 52

Warning: foreach() argument must be of type array|object, null given in /var/www/vhosts/rptronics.com/httpdocs/site/php/viewProductsWithFilters.php on line 52
N-channel FETs and MOSFETs (page 28) - RPtronics
Electronic components and equipment, for businesses and individuals
Semiconductors Transistors
N-channel FETs and MOSFETs

N-channel FETs and MOSFETs

1186 products available
Products per page :
Quantity in stock : 46
IRFP90N20D

IRFP90N20D

N-channel transistor, 66A, 94A, 250uA, 0.023 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 66A. ID (T...
IRFP90N20D
N-channel transistor, 66A, 94A, 250uA, 0.023 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 66A. ID (T=25°C): 94A. Idss (max): 250uA. On-resistance Rds On: 0.023 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 1070pF. Cost): 6040pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: High frequency DC-DC converts. G-S Protection: no. Id(imp): 380A. IDss (min): 25uA. Pd (Power Dissipation, Max): 580W. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
IRFP90N20D
N-channel transistor, 66A, 94A, 250uA, 0.023 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 66A. ID (T=25°C): 94A. Idss (max): 250uA. On-resistance Rds On: 0.023 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 1070pF. Cost): 6040pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: High frequency DC-DC converts. G-S Protection: no. Id(imp): 380A. IDss (min): 25uA. Pd (Power Dissipation, Max): 580W. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
Set of 1
12.43$ VAT incl.
(11.50$ excl. VAT)
12.43$
Quantity in stock : 44
IRFP90N20DPBF

IRFP90N20DPBF

N-channel transistor, 200V, TO-247AC, 0.02. Drain-source voltage (Vds): 200V. Housing: TO-247AC. On-...
IRFP90N20DPBF
N-channel transistor, 200V, TO-247AC, 0.02. Drain-source voltage (Vds): 200V. Housing: TO-247AC. On-resistance Rds On: 0.02. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 94A. Power: 580W
IRFP90N20DPBF
N-channel transistor, 200V, TO-247AC, 0.02. Drain-source voltage (Vds): 200V. Housing: TO-247AC. On-resistance Rds On: 0.02. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 94A. Power: 580W
Set of 1
17.74$ VAT incl.
(16.41$ excl. VAT)
17.74$
Quantity in stock : 19
IRFPC50

IRFPC50

N-channel transistor, 7A, 11A, 500uA, 0.6 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 7A. ID (T=25Â...
IRFPC50
N-channel transistor, 7A, 11A, 500uA, 0.6 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 500uA. On-resistance Rds On: 0.6 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 600V. C(in): 2700pF. Cost): 300pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 44A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 88 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFPC50
N-channel transistor, 7A, 11A, 500uA, 0.6 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 500uA. On-resistance Rds On: 0.6 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 600V. C(in): 2700pF. Cost): 300pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 44A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 88 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
7.28$ VAT incl.
(6.73$ excl. VAT)
7.28$
Quantity in stock : 46
IRFPC50A

IRFPC50A

N-channel transistor, 7A, 11A, 250uA, 0.58 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 7A. ID (T=25...
IRFPC50A
N-channel transistor, 7A, 11A, 250uA, 0.58 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. On-resistance Rds On: 0.58 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 600V. C(in): 2100pF. Cost): 270pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 44A. IDss (min): 25uA-. Number of terminals: 3. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 33 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFPC50A
N-channel transistor, 7A, 11A, 250uA, 0.58 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. On-resistance Rds On: 0.58 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 600V. C(in): 2100pF. Cost): 270pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 44A. IDss (min): 25uA-. Number of terminals: 3. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 33 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
6.69$ VAT incl.
(6.19$ excl. VAT)
6.69$
Quantity in stock : 28
IRFPC50PBF

IRFPC50PBF

N-channel transistor, PCB soldering, TO-247AC, 600V, 11A. Housing: PCB soldering. Housing: TO-247AC....
IRFPC50PBF
N-channel transistor, PCB soldering, TO-247AC, 600V, 11A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 11A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPC50PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 88 ns. Ciss Gate Capacitance [pF]: 2700pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
IRFPC50PBF
N-channel transistor, PCB soldering, TO-247AC, 600V, 11A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 11A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPC50PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 88 ns. Ciss Gate Capacitance [pF]: 2700pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
11.10$ VAT incl.
(10.27$ excl. VAT)
11.10$
Quantity in stock : 22
IRFPC60

IRFPC60

N-channel transistor, 6A, 16A, 500uA, 0.4 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 6A. ID (T=25Â...
IRFPC60
N-channel transistor, 6A, 16A, 500uA, 0.4 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 6A. ID (T=25°C): 16A. Idss (max): 500uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 600V. C(in): 3900pF. Cost): 440pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: Fast Switching, Dynamic dv/dt Rating. G-S Protection: no. Id(imp): 64A. IDss (min): 100uA. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 19 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFPC60
N-channel transistor, 6A, 16A, 500uA, 0.4 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 6A. ID (T=25°C): 16A. Idss (max): 500uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 600V. C(in): 3900pF. Cost): 440pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: Fast Switching, Dynamic dv/dt Rating. G-S Protection: no. Id(imp): 64A. IDss (min): 100uA. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 19 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
9.60$ VAT incl.
(8.88$ excl. VAT)
9.60$
Quantity in stock : 33
IRFPE40

IRFPE40

N-channel transistor, 3.4A, 5.4A, 500uA, 2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 3.4A. ID (T=...
IRFPE40
N-channel transistor, 3.4A, 5.4A, 500uA, 2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 3.4A. ID (T=25°C): 5.4A. Idss (max): 500uA. On-resistance Rds On: 2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 800V. C(in): 1900pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: fast switching, ORION TV. G-S Protection: no. Id(imp): 22A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFPE40
N-channel transistor, 3.4A, 5.4A, 500uA, 2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 3.4A. ID (T=25°C): 5.4A. Idss (max): 500uA. On-resistance Rds On: 2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 800V. C(in): 1900pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: fast switching, ORION TV. G-S Protection: no. Id(imp): 22A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
5.92$ VAT incl.
(5.48$ excl. VAT)
5.92$
Quantity in stock : 47
IRFPE40PBF

IRFPE40PBF

N-channel transistor, PCB soldering, TO-247AC, 800V, 5.4A. Housing: PCB soldering. Housing: TO-247AC...
IRFPE40PBF
N-channel transistor, PCB soldering, TO-247AC, 800V, 5.4A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 5.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPE40PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 2 Ohms @ 3.2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 100 ns. Ciss Gate Capacitance [pF]: 1900pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
IRFPE40PBF
N-channel transistor, PCB soldering, TO-247AC, 800V, 5.4A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 5.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPE40PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 2 Ohms @ 3.2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 100 ns. Ciss Gate Capacitance [pF]: 1900pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
8.43$ VAT incl.
(7.80$ excl. VAT)
8.43$
Quantity in stock : 127
IRFPE50

IRFPE50

N-channel transistor, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 4.7A. ID (...
IRFPE50
N-channel transistor, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 4.7A. ID (T=25°C): 7.8A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 800V. C(in): 3100pF. Cost): 800pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 31A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFPE50
N-channel transistor, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 4.7A. ID (T=25°C): 7.8A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 800V. C(in): 3100pF. Cost): 800pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 31A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
7.68$ VAT incl.
(7.10$ excl. VAT)
7.68$
Quantity in stock : 49
IRFPF40

IRFPF40

N-channel transistor, 4.7A, 4.7A, TO-247, TO-247AC, 900V. ID (T=25°C): 4.7A. Idss (max): 4.7A. Hous...
IRFPF40
N-channel transistor, 4.7A, 4.7A, TO-247, TO-247AC, 900V. ID (T=25°C): 4.7A. Idss (max): 4.7A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 900V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: <63/214ns. Assembly/installation: PCB through-hole mounting. Technology: V-MOS L
IRFPF40
N-channel transistor, 4.7A, 4.7A, TO-247, TO-247AC, 900V. ID (T=25°C): 4.7A. Idss (max): 4.7A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 900V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: <63/214ns. Assembly/installation: PCB through-hole mounting. Technology: V-MOS L
Set of 1
7.22$ VAT incl.
(6.68$ excl. VAT)
7.22$
Quantity in stock : 63
IRFPF50

IRFPF50

N-channel transistor, 4.2A, 6.7A, 500uA, 1.6 Ohms, TO-247, TO-247AC, 900V. ID (T=100°C): 4.2A. ID (...
IRFPF50
N-channel transistor, 4.2A, 6.7A, 500uA, 1.6 Ohms, TO-247, TO-247AC, 900V. ID (T=100°C): 4.2A. ID (T=25°C): 6.7A. Idss (max): 500uA. On-resistance Rds On: 1.6 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 900V. C(in): 2900pF. Cost): 270pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 27A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFPF50
N-channel transistor, 4.2A, 6.7A, 500uA, 1.6 Ohms, TO-247, TO-247AC, 900V. ID (T=100°C): 4.2A. ID (T=25°C): 6.7A. Idss (max): 500uA. On-resistance Rds On: 1.6 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 900V. C(in): 2900pF. Cost): 270pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 27A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
8.29$ VAT incl.
(7.67$ excl. VAT)
8.29$
Quantity in stock : 74
IRFPF50PBF

IRFPF50PBF

N-channel transistor, PCB soldering, TO-247AC, 900V, 6.7A. Housing: PCB soldering. Housing: TO-247AC...
IRFPF50PBF
N-channel transistor, PCB soldering, TO-247AC, 900V, 6.7A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 6.7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPF50PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.6 Ohms @ 4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 2900pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
IRFPF50PBF
N-channel transistor, PCB soldering, TO-247AC, 900V, 6.7A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 6.7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPF50PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.6 Ohms @ 4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 2900pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
9.25$ VAT incl.
(8.56$ excl. VAT)
9.25$
Quantity in stock : 52
IRFPG50

IRFPG50

N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V. ID (T=100°C): 3.9A. ID (T...
IRFPG50
N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V. ID (T=100°C): 3.9A. ID (T=25°C): 6.1A. Idss (max): 500uA. On-resistance Rds On: 2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 1000V. C(in): 2800pF. Cost): 250pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 24A. IDss (min): 100uA. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 19 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v
IRFPG50
N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V. ID (T=100°C): 3.9A. ID (T=25°C): 6.1A. Idss (max): 500uA. On-resistance Rds On: 2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 1000V. C(in): 2800pF. Cost): 250pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 24A. IDss (min): 100uA. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 19 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v
Set of 1
8.56$ VAT incl.
(7.92$ excl. VAT)
8.56$
Quantity in stock : 44
IRFPS37N50A

IRFPS37N50A

N-channel transistor, 23A, 36A, 250uA, 0.13 Ohms, 17.4k Ohms, SUPER247, 500V. ID (T=100°C): 23A. ID...
IRFPS37N50A
N-channel transistor, 23A, 36A, 250uA, 0.13 Ohms, 17.4k Ohms, SUPER247, 500V. ID (T=100°C): 23A. ID (T=25°C): 36A. Idss (max): 250uA. On-resistance Rds On: 0.13 Ohms. Housing: 17.4k Ohms. Housing (according to data sheet): SUPER247. Voltage Vds(max): 500V. C(in): 5579pF. Cost): 810pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 144A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 23 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFPS37N50A
N-channel transistor, 23A, 36A, 250uA, 0.13 Ohms, 17.4k Ohms, SUPER247, 500V. ID (T=100°C): 23A. ID (T=25°C): 36A. Idss (max): 250uA. On-resistance Rds On: 0.13 Ohms. Housing: 17.4k Ohms. Housing (according to data sheet): SUPER247. Voltage Vds(max): 500V. C(in): 5579pF. Cost): 810pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 144A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 23 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
25.41$ VAT incl.
(23.51$ excl. VAT)
25.41$
Quantity in stock : 10
IRFPS37N50APBF

IRFPS37N50APBF

N-channel transistor, PCB soldering, 17.4k Ohms, 500V, 36A. Housing: PCB soldering. Housing: 17.4k O...
IRFPS37N50APBF
N-channel transistor, PCB soldering, 17.4k Ohms, 500V, 36A. Housing: PCB soldering. Housing: 17.4k Ohms. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 36A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPS37N50APBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 5580pF. Maximum dissipation Ptot [W]: 446W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
IRFPS37N50APBF
N-channel transistor, PCB soldering, 17.4k Ohms, 500V, 36A. Housing: PCB soldering. Housing: 17.4k Ohms. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 36A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPS37N50APBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 5580pF. Maximum dissipation Ptot [W]: 446W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
26.61$ VAT incl.
(24.62$ excl. VAT)
26.61$
Quantity in stock : 158
IRFR024N

IRFR024N

N-channel transistor, 12A, 17A, 250uA, 0.075 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 5...
IRFR024N
N-channel transistor, 12A, 17A, 250uA, 0.075 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 370pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 68A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 4.9 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFR024N
N-channel transistor, 12A, 17A, 250uA, 0.075 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 370pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 68A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 4.9 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.58$ VAT incl.
(1.46$ excl. VAT)
1.58$
Quantity in stock : 131
IRFR024NPBF

IRFR024NPBF

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 55V, 17A. Housing: PCB soldering (SMD). Ho...
IRFR024NPBF
N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 55V, 17A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 17A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR024N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.9 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 45W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
IRFR024NPBF
N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 55V, 17A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 17A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR024N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.9 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 45W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
2.40$ VAT incl.
(2.22$ excl. VAT)
2.40$
Quantity in stock : 987
IRFR024NTRPBF

IRFR024NTRPBF

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 60V, 14A. Housing: PCB soldering (SMD). Ho...
IRFR024NTRPBF
N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 60V, 14A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 14A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR024N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.9 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 45W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
IRFR024NTRPBF
N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 60V, 14A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 14A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR024N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.9 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 45W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
2.40$ VAT incl.
(2.22$ excl. VAT)
2.40$
Quantity in stock : 118
IRFR110

IRFR110

N-channel transistor, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V. ID (T=10...
IRFR110
N-channel transistor, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 250uA. On-resistance Rds On: 0.54 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. C(in): 180pF. Cost): 80pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 17A. IDss (min): 25uA. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFR110
N-channel transistor, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 250uA. On-resistance Rds On: 0.54 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. C(in): 180pF. Cost): 80pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 17A. IDss (min): 25uA. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.30$ VAT incl.
(1.20$ excl. VAT)
1.30$
Quantity in stock : 818
IRFR110PBF

IRFR110PBF

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 100V, 4.3A. Housing: PCB soldering (SMD). ...
IRFR110PBF
N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 100V, 4.3A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 4.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRFR110PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 2.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.9ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 180pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
IRFR110PBF
N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 100V, 4.3A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 4.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRFR110PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 2.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.9ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 180pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
3.70$ VAT incl.
(3.42$ excl. VAT)
3.70$
Quantity in stock : 102
IRFR1205

IRFR1205

N-channel transistor, 31A, 44A, 250uA, 0.027 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 5...
IRFR1205
N-channel transistor, 31A, 44A, 250uA, 0.027 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 31A. ID (T=25°C): 44A. Idss (max): 250uA. On-resistance Rds On: 0.027 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 1300pF. Cost): 410pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 65 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance, Fast Switching. G-S Protection: no. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 107W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 47 ns. Td(on): 7.3 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+155°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
IRFR1205
N-channel transistor, 31A, 44A, 250uA, 0.027 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 31A. ID (T=25°C): 44A. Idss (max): 250uA. On-resistance Rds On: 0.027 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 1300pF. Cost): 410pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 65 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance, Fast Switching. G-S Protection: no. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 107W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 47 ns. Td(on): 7.3 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+155°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
Set of 1
1.70$ VAT incl.
(1.57$ excl. VAT)
1.70$
Quantity in stock : 1542
IRFR1205TRPBF

IRFR1205TRPBF

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 55V, 44A. Housing: PCB soldering (SMD). Ho...
IRFR1205TRPBF
N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 55V, 44A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 44A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR1205. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.027 Ohms @ 26A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7.3 ns. Switch-off delay tf[nsec.]: 47 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 107W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
IRFR1205TRPBF
N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 55V, 44A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 44A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR1205. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.027 Ohms @ 26A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7.3 ns. Switch-off delay tf[nsec.]: 47 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 107W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
2.31$ VAT incl.
(2.14$ excl. VAT)
2.31$
Quantity in stock : 864
IRFR120NPBF

IRFR120NPBF

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 100V, 6.6A. Housing: PCB soldering (SMD). ...
IRFR120NPBF
N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 100V, 6.6A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 6.6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR1205N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.21 Ohms @ 5.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.5 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 330pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
IRFR120NPBF
N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 100V, 6.6A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 6.6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR1205N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.21 Ohms @ 5.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.5 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 330pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
1.92$ VAT incl.
(1.78$ excl. VAT)
1.92$
Quantity in stock : 130
IRFR220NTRLPBF

IRFR220NTRLPBF

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 200V, 5A. Housing: PCB soldering (SMD). Ho...
IRFR220NTRLPBF
N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 200V, 5A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR220N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ 5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.4 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 300pF. Maximum dissipation Ptot [W]: 43W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
IRFR220NTRLPBF
N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 200V, 5A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR220N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ 5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.4 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 300pF. Maximum dissipation Ptot [W]: 43W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
3.18$ VAT incl.
(2.94$ excl. VAT)
3.18$
Quantity in stock : 57
IRFR320

IRFR320

N-channel transistor, 2A, 3.1A, 3.1A, 1.8 Ohms, D-PAK TO-252AA, 400V. ID (T=100°C): 2A. ID (T=25°C...
IRFR320
N-channel transistor, 2A, 3.1A, 3.1A, 1.8 Ohms, D-PAK TO-252AA, 400V. ID (T=100°C): 2A. ID (T=25°C): 3.1A. Idss (max): 3.1A. On-resistance Rds On: 1.8 Ohms. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 400V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 42W. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET
IRFR320
N-channel transistor, 2A, 3.1A, 3.1A, 1.8 Ohms, D-PAK TO-252AA, 400V. ID (T=100°C): 2A. ID (T=25°C): 3.1A. Idss (max): 3.1A. On-resistance Rds On: 1.8 Ohms. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 400V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 42W. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET
Set of 1
2.03$ VAT incl.
(1.88$ excl. VAT)
2.03$

Information and technical help

By phone :

Payment and delivery

Delivery in 2-3 days, with postal tracking!

Subscribe to the newsletter

I agree to receive emails, and I understand that I can unsubscribe at any time after subscribing.

All rights reserved, RPtronics, 2024.