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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, n/a, 30A, 100uA, 38m Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 200V - 2SK3176

N-channel transistor, n/a, 30A, 100uA, 38m Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 200V - 2SK3176
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 1 10.71$ 11.58$
2 - 2 10.17$ 10.99$
3 - 4 9.64$ 10.42$
5 - 9 9.10$ 9.84$
10 - 19 8.89$ 9.61$
20 - 29 8.67$ 9.37$
30 - 42 8.35$ 9.03$
Quantity U.P
1 - 1 10.71$ 11.58$
2 - 2 10.17$ 10.99$
3 - 4 9.64$ 10.42$
5 - 9 9.10$ 9.84$
10 - 19 8.89$ 9.61$
20 - 29 8.67$ 9.37$
30 - 42 8.35$ 9.03$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 42
Set of 1

N-channel transistor, n/a, 30A, 100uA, 38m Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 200V - 2SK3176. N-channel transistor, n/a, 30A, 100uA, 38m Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 200V. ID (T=100°C): n/a. ID (T=25°C): 30A. Idss (max): 100uA. On-resistance Rds On: 38m Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 200V. C(in): 5400pF. Cost): 1900pF. Channel type: N. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Id(imp): 60.4k Ohms. IDss (min): 10uA. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 190 ns. Td(on): 55 ns. Technology: Field Effect Transistor MOS-V. Operating temperature: -...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V. Number of terminals: 3. Quantity per case: 1. Function: Switching mode Regulator, DC-DC Converter, Motor Driver. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 28/04/2025, 09:25.

Technical documentation

Equivalent products :

Quantity in stock : 143
IRFP250N

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N-channel transistor, 21A, 30A, 250uA, 0.075 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 21A. ID (T...
IRFP250N
N-channel transistor, 21A, 30A, 250uA, 0.075 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 2159pF. Cost): 315pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 186 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 60.4k Ohms. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
IRFP250N
N-channel transistor, 21A, 30A, 250uA, 0.075 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 2159pF. Cost): 315pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 186 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 60.4k Ohms. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
6.05$ VAT incl.
(5.60$ excl. VAT)
6.05$

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