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Semiconductors Transistors FET and MOSFET transistors

P-channel transistor, 12A, 500uA, TO-220, TO-220AB, 100V - IRF9530

P-channel transistor, 12A, 500uA, TO-220, TO-220AB, 100V - IRF9530
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.01$ 2.17$
5 - 9 1.91$ 2.06$
10 - 24 1.81$ 1.96$
25 - 49 1.71$ 1.85$
50 - 99 1.67$ 1.81$
100 - 112 1.42$ 1.54$
Quantity U.P
1 - 4 2.01$ 2.17$
5 - 9 1.91$ 2.06$
10 - 24 1.81$ 1.96$
25 - 49 1.71$ 1.85$
50 - 99 1.67$ 1.81$
100 - 112 1.42$ 1.54$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 112
Set of 1

P-channel transistor, 12A, 500uA, TO-220, TO-220AB, 100V - IRF9530. P-channel transistor, 12A, 500uA, TO-220, TO-220AB, 100V. ID (T=25°C): 12A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 860pF. Cost): 340pF. Channel type: P. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 48A. ID (T=100°C): 8.2A. IDss (min): 100uA. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 28/04/2025, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 34
IRF9530N

IRF9530N

P-channel transistor, 14A, 250uA, TO-220, TO-220AB, 100V. ID (T=25°C): 14A. Idss (max): 250uA. Hous...
IRF9530N
P-channel transistor, 14A, 250uA, TO-220, TO-220AB, 100V. ID (T=25°C): 14A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 760pF. Cost): 260pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. ID (T=100°C): 10A. IDss (min): 25uA. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
IRF9530N
P-channel transistor, 14A, 250uA, TO-220, TO-220AB, 100V. ID (T=25°C): 14A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 760pF. Cost): 260pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. ID (T=100°C): 10A. IDss (min): 25uA. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
2.36$ VAT incl.
(2.18$ excl. VAT)
2.36$

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