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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 12A, 17A, 250uA, 0.09 Ohms, TO-220, TO-220AB, 100V - IRF530N

N-channel transistor, 12A, 17A, 250uA, 0.09 Ohms, TO-220, TO-220AB, 100V - IRF530N
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.36$ 2.55$
5 - 9 2.24$ 2.42$
10 - 24 2.12$ 2.29$
25 - 49 2.00$ 2.16$
50 - 99 1.96$ 2.12$
100 - 110 1.79$ 1.93$
Quantity U.P
1 - 4 2.36$ 2.55$
5 - 9 2.24$ 2.42$
10 - 24 2.12$ 2.29$
25 - 49 2.00$ 2.16$
50 - 99 1.96$ 2.12$
100 - 110 1.79$ 1.93$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 110
Set of 1

N-channel transistor, 12A, 17A, 250uA, 0.09 Ohms, TO-220, TO-220AB, 100V - IRF530N. N-channel transistor, 12A, 17A, 250uA, 0.09 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.09 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 920pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 93 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 60A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 9.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no. Quantity in stock updated on 27/04/2025, 20:25.

Technical documentation

Equivalent products :

Quantity in stock : 142
IRF530

IRF530

N-channel transistor, 10A, 14A, 250uA, 0.16 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 10A. ID (T=...
IRF530
N-channel transistor, 10A, 14A, 250uA, 0.16 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 88W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no
IRF530
N-channel transistor, 10A, 14A, 250uA, 0.16 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 88W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no
Set of 1
1.50$ VAT incl.
(1.39$ excl. VAT)
1.50$

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