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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 2.8A, 4A, 4A, 2 Ohms, TO-220, TO-220AB, 600V - BUZ90A

N-channel transistor, 2.8A, 4A, 4A, 2 Ohms, TO-220, TO-220AB, 600V - BUZ90A
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.67$ 2.89$
5 - 9 2.54$ 2.75$
10 - 24 2.40$ 2.59$
25 - 49 2.27$ 2.45$
50 - 59 2.22$ 2.40$
Quantity U.P
1 - 4 2.67$ 2.89$
5 - 9 2.54$ 2.75$
10 - 24 2.40$ 2.59$
25 - 49 2.27$ 2.45$
50 - 59 2.22$ 2.40$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 59
Set of 1

N-channel transistor, 2.8A, 4A, 4A, 2 Ohms, TO-220, TO-220AB, 600V - BUZ90A. N-channel transistor, 2.8A, 4A, 4A, 2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.8A. ID (T=25°C): 4A. Idss (max): 4A. On-resistance Rds On: 2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Number of terminals: 3. Quantity per case: 1. Quantity in stock updated on 28/04/2025, 17:25.

Equivalent products :

Quantity in stock : 15
BUK455-600B

BUK455-600B

N-channel transistor, 2.5A, 4A, 20uA, 2.1 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.5A. ID (T=25Â...
BUK455-600B
N-channel transistor, 2.5A, 4A, 20uA, 2.1 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss (max): 20uA. On-resistance Rds On: 2.1 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 750pF. Cost): 90pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Power MOSFET SMPS. Id(imp): 16A. IDss (min): 2uA. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 10 ns. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
BUK455-600B
N-channel transistor, 2.5A, 4A, 20uA, 2.1 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss (max): 20uA. On-resistance Rds On: 2.1 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 750pF. Cost): 90pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Power MOSFET SMPS. Id(imp): 16A. IDss (min): 2uA. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 10 ns. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
Set of 1
7.28$ VAT incl.
(6.73$ excl. VAT)
7.28$
Quantity in stock : 50
IRFBC40

IRFBC40

N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (...
IRFBC40
N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 25A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
IRFBC40
N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 25A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
2.96$ VAT incl.
(2.74$ excl. VAT)
2.96$

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IRFBC30

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