N-channel transistor SKW25N120, 20A, TO-247, TO-247 ( AC ), 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. C(in): 1150pF. CE diode: yes. Channel type: N. Collector current: 46A. Conditioning unit: 30. Conditioning: plastic tube. Cost): 120pF. Function: Fast IGBT in NPT-technology with soft, fast recovery. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Gate/emitter voltage VGE: 20V. Germanium diode: -. Ic(pulse): 84A. Marking on the case: K25N120. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 313W. RoHS: yes. Saturation voltage VCE(sat): 3.1V. Spec info: Td(on) 50ns / Td(off) 820ns. Td(off): 730 ns. Td(on): 45 ns. Trr Diode (Min.): 280 ns. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 13/11/2025, 10:40