NPN bipolar transistors

NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. BE resistor: 50. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 15...28. Marking on the case: ST13009L. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: ST13009L. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 700V

NPN transistor. BE diode: no. Cost): 122pF. CE diode: no. Quantity per case: 1

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), MT-100 TO-3P-5, 160V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): MT-100 TO-3P-5. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 45pF. CE diode: no. Conditioning: plastic tube. Conditioning unit: 30. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: Darlington Transistors for Audio Amplifiers. Max hFE gain: 2000. Minimum hFE gain: 5000. Number of terminals: 5. Temperature: +150°C. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), MT-100 TO-3P-5, 160V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): MT-100 TO-3P-5. Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 30. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: Darlington Transistors for Audio Amplifiers. Max hFE gain: 2000. Minimum hFE gain: 5000. Number of terminals: 5. Temperature: +150°C. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP & NPN. Vcbo: 160V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, 1.5A, SOT-223 ( TO-226 ), SOT-223, 400V. Collector current: 1.5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. Function: High voltage fast-switching power transistor. Max hFE gain: 32. Minimum hFE gain: 4. Ic(pulse): 3A. Marking on the case: N83003. Number of terminals: 3. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Spec info: complementary transistor (pair) STN93003. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V

NPN transistor, 5A, SOT-223 ( TO-226 ), SOT-223, 60V. Collector current: 5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 215pF. CE diode: no. Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: Low voltage fast-switching NPN power transistor. Max hFE gain: 350. Minimum hFE gain: 30. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.32V. Vebo: 7V

Assembly/installation: PCB through-hole mounting. BE diode: NINCS. CE diode: NINCS. Collector current: 2A. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Function: Linear and switching applications. Housing: TO-92. Housing (according to data sheet): TO-92. Ic(pulse): 4A. Max hFE gain: 1000. Minimum hFE gain: 500. Number of terminals: 3 pieces. Pd (Power Dissipation, Max): 1.2W. Process: Monolithic Darlington. ROHS: yes. Saturation voltage VCE(sat): 2.5V. Semiconductor material: silicon. Temperature: +150°C. Type of transistor: NPN. Vcbo: 100V. Vebo: 5V

NPN transistor, 1A, TO-92, TO-92, 700V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: HIGH SWITCH. Pd (Power Dissipation, Max): 1.5W. Spec info: High-Speed. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 7A, ISOWATT218, ISOWATT218, 700V. Collector current: 7A. Housing: ISOWATT218. Housing (according to data sheet): ISOWATT218. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: High voltage fast switching. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, TO-220, TO-220, 100V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. BE resistor: 8k Ohms (R1), 120 Ohms (R2). CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: switching, audio amplifier. Max hFE gain: 20000. Minimum hFE gain: 1000. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Spec info: complementary transistor (pair) TIP107. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V

NPN transistor, 2A, 60V. Collector current: 2A. Collector/emitter voltage Vceo: 60V. Darlington transistor?: yes. Semiconductor material: silicon. Max hFE gain: 1000. Minimum hFE gain: 500. Ic(pulse): 4A. Note: >1000. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: 10k Ohms (R1), 600 Ohms (R2). Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V

NPN transistor, 4A, 80V. Collector current: 4A. Collector/emitter voltage Vceo: 80V. BE diode: no. Cost): 2pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Note: >1000. Pd (Power Dissipation, Max): 50W. Spec info: TO-220. Type of transistor: NPN

NPN transistor, PCB soldering, TO-220AB, 5A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 5A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP120. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-220AB, 5A, 5A, TO-220, TO-220, 100V. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 5A. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP122. Collector-emitter voltage Uceo [V]: 100V. Cutoff frequency ft [MHz]: silicon. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Minimum hFE gain: 1000. Ic(pulse): 8A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. Spec info: complementary transistor (pair) TIP127. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, 5A, TO-220, TO-220, 100V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Resistor B: yes. BE diode: no. BE resistor: 8 k Ohms és 120 Ohms. C(in): TO-220. Cost): 200pF. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 8k Ohms (R1), 120 Ohms (R2). Max hFE gain: +150°C. Minimum hFE gain: 1000. Ic(pulse): 8A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Spec info: complementary transistor (pair) TIP127G. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, PCB soldering, TO-220AB, 8A, TO-220, TO220, 100V. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 8A. Housing: TO-220. Housing (according to data sheet): TO220. Collector/emitter voltage Vceo: 100V. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP132. Collector-emitter voltage Uceo [V]: 100V. Cutoff frequency ft [MHz]: 15000. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) TIP137. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 4 v. Vebo: 5V

NPN transistor, 10A, TO-247, TO-247, 100V. Collector current: 10A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. BE diode: no. BE resistor: R1 typ=5k Ohms, R2 typ=60 Ohms. Cost): 60pF. CE diode: yes. Darlington transistor?: yes. Semiconductor material: silicon. Function: Complementary power Darlington transistor. Max hFE gain: 1000. Minimum hFE gain: 500. Ic(pulse): 20A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) TIP147. Assembly/installation: PCB through-hole mounting. Technology: Monolithic Darlington. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V. Resistor B: Darlington Power Transistor. C(in): 100V

NPN transistor, 10A, TO-220, TO-220, 100V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. BE resistor: R1 typ=5k Ohms, R2 typ=60 Ohms. CE diode: yes. Darlington transistor?: yes. Semiconductor material: silicon. Function: Complementary power Darlington transistor. Max hFE gain: 1000. Minimum hFE gain: 500. Ic(pulse): 20A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Spec info: complementary transistor (pair) TIP147T. Assembly/installation: PCB through-hole mounting. Technology: Monolithic Darlington. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, 15A, TO-247, TO-247, 100V, 100V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: 100V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: audio amplifier. Max hFE gain: 70. Minimum hFE gain: 20. Note: complementary transistor (pair) TIP2955. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Spec info: Low collector-emitter saturation voltage. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1V. Vebo: 7V. Type of transistor: NPN power transistor. Polarity: NPN. Power: 90W

NPN transistor, 3A, TO-220, TO-220, 100V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 24. Minimum hFE gain: 10. Ic(pulse): 5A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Spec info: complementary transistor (pair) TIP32C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.2V. Vebo: 5V

NPN transistor, 10A, TO-247, TO-247, 100V. Collector current: 10A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain: 100. Minimum hFE gain: 20. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Spec info: complementary transistor (pair) TIP34C. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 140V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 25A, TO-247, TO-247, 100V, 100V. Collector current: 25A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: 100V. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Production date: 1450. Max hFE gain: 50. Minimum hFE gain: 25. Ic(pulse): 50A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) TIP36C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.8V. Type of transistor: NPN power transistor. Polarity: NPN. Power: 125W. Max frequency: 3MHz

NPN transistor, PCB soldering, TO-247, 25A. Housing: PCB soldering. Housing: TO-247. Collector current Ic [A], max.: 25A. RoHS: yes. Component family: NPN power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP35CG. Collector-emitter voltage Uceo [V]: 100V. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 6A, TO-220, TO-220AB, 100V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. BE diode: no. Cost): 80pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain: 75. Minimum hFE gain: 15. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Spec info: complementary transistor (pair) TIP42C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Vebo: 5V

NPN transistor, 100V, 6A, TO-220. Collector-Emitter Voltage VCEO: 100V. Collector current: 6A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Power: 65W. Max frequency: 3MHz