NPN bipolar transistors

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A8A. Collector-emitter voltage Uceo [V]: 50V. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

BE diode: VAN. BE resistor: 42 Ohms. CE diode: VAN. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A8E. Collector-emitter voltage Uceo [V]: 50V. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A8K. Collector-emitter voltage Uceo [V]: 50V. Maximum dissipation Ptot [W]: 0.246W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-218, 160V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Darlington transistor?: yes. Semiconductor material: silicon. FT: 55 MHz. Function: pair of complementary transistors. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP & NPN

NPN transistor, PCB soldering, TO-92, 500mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MPSA42. Collector-emitter voltage Uceo [V]: 300V. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.5A, TO-92, TO-92, 40V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 40V

NPN transistor, 0.1A, TO-92, TO-92A, 12V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92A. Collector/emitter voltage Vceo: 12V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Max hFE gain: 600. Minimum hFE gain: 45. Pd (Power Dissipation, Max): 0.35W. Spec info: MPS9630K. Type of transistor: NPN. Saturation voltage VCE(sat): 0.5V

NPN transistor, 500mA, TO-92, TO-92, 80V. Collector current: 500mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. BE diode: no. BE resistor: 10. Cost): 300pF. CE diode: yes. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100MHz. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.25V. Vebo: 4 v

NPN transistor, PCB soldering, TO-92, 500mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MPSA06. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.5A, 30 v. Collector current: 0.5A. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: general purpose. Max hFE gain: 10000. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 0.625W. Technology: Darlington transistor. Tf(min): 125 MHz. Type of transistor: NPN. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V

NPN transistor, 500mA, TO-92, TO-92, 30 v. Collector current: 500mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: general purpose. Max hFE gain: 20000. Minimum hFE gain: 10000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V

NPN transistor, 45V, 0.2A, TO-92. Collector-Emitter Voltage VCEO: 45V. Collector current: 0.2A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Max frequency: 100 MHz. DC Collector/Base Gain hFE min.: 1000. Applications: Audio

NPN transistor, 0.5A, TO-92, TO-92 (ammo pak), 300V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92 (ammo pak). Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: VIDEO amp.. Max hFE gain: 40. Minimum hFE gain: 25. Equivalents: KSP42. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) MPSA92. Type of transistor: NPN. Vcbo: 300V. Saturation voltage VCE(sat): 500mV. Vebo: 6V

NPN transistor, 0.3A, TO-92, TO-92 (ammo pak), 400V. Collector current: 0.3A. Housing: TO-92. Housing (according to data sheet): TO-92 (ammo pak). Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 7pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: VIDEO amp.. Max hFE gain: 50. Minimum hFE gain: 40. Equivalents: KSP44, CMPSA44. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 500V. Saturation voltage VCE(sat): 400mV. Maximum saturation voltage VCE(sat): 750mV. Vebo: 6V

NPN transistor, PCB soldering, TO-92, 5mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 5mA. RoHS: no. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MPSH10. Collector-emitter voltage Uceo [V]: 25V. Cutoff frequency ft [MHz]: 650 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.5A, TO-92, TO-92M ( 9mm ), 300V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: hFE 25...40. Pd (Power Dissipation, Max): 1W. Spec info: One Watt High Voltage Transistor. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 1A, TO-92, TO-92M ( 9mm ), 50V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. FT: 100 MHz. Function: High hFE. Max hFE gain: 150000. Minimum hFE gain: 25000. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Vcbo: 60V. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 12V

NPN transistor, 28V. Collector-Emitter Voltage VCEO: 28V. Type of transistor: NPN transistor. Polarity: NPN. Applications: RF-POWER

NPN transistor, 0.1A, SOT-23 ( TO-236 ), SC-59 ( 2.9x1.5x1.15mm ), 50V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SC-59 ( 2.9x1.5x1.15mm ). Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: transistor with bias resistor network. Max hFE gain: 100. Minimum hFE gain: 60. Note: Panasonic NV-SD450. Note: B1GBCFLL0035. Marking on the case: 8B. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 338mW. RoHS: yes. Spec info: screen printing/SMD code 8B. Assembly/installation: surface-mounted component (SMD). Technology: Digital Transistors (BRT). Type of transistor: NPN. Vcbo: 50V

NPN transistor. BE diode: no. C(in): 9pF. Cost): 3.5pF. CE diode: no. Quantity per case: 1

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. BE diode: no. C(in): 9pF. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: audio power amplifier. Production date: 201452 201512. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) NJW1302. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN transistor, 15A, 60V. Collector current: 15A. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Max hFE gain: 70. Minimum hFE gain: 20. Note: hFE 20...70. Note: complementary transistor (pair) NTE219. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 3.3V. Vebo: 7V

NPN transistor. BE diode: no. Cost): 135pF. CE diode: no. Quantity per case: 1

NPN transistor, 8A, SOT-199, SOT-199, 700V. Collector current: 8A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: Made for Grundig. Pd (Power Dissipation, Max): 34W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V