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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 0.5A, 30 v - MPSA13

NPN transistor, 0.5A, 30 v - MPSA13
Quantity (Set of 5) excl. VAT VAT incl.
1 - 2 1.31$ 1.42$
3 - 4 1.24$ 1.34$
5 - 9 1.18$ 1.28$
10 - 19 1.15$ 1.24$
20 - 32 1.11$ 1.20$
Quantity (Set of 5) U.P
1 - 2 1.31$ 1.42$
3 - 4 1.24$ 1.34$
5 - 9 1.18$ 1.28$
10 - 19 1.15$ 1.24$
20 - 32 1.11$ 1.20$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 157
Set of 5

NPN transistor, 0.5A, 30 v - MPSA13. NPN transistor, 0.5A, 30 v. Collector current: 0.5A. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: general purpose. Max hFE gain: 10000. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 0.625W. Technology: Darlington transistor. Tf(min): 125 MHz. Type of transistor: NPN. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V. Original product from manufacturer Cdil. Quantity in stock updated on 16/06/2025, 16:25.

Equivalent products :

Quantity in stock : 185
MPSA14

MPSA14

NPN transistor, 500mA, TO-92, TO-92, 30 v. Collector current: 500mA. Housing: TO-92. Housing (accord...
MPSA14
NPN transistor, 500mA, TO-92, TO-92, 30 v. Collector current: 500mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: general purpose. Max hFE gain: 20000. Minimum hFE gain: 10000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V
MPSA14
NPN transistor, 500mA, TO-92, TO-92, 30 v. Collector current: 500mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: general purpose. Max hFE gain: 20000. Minimum hFE gain: 10000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V
Set of 1
0.50$ VAT incl.
(0.46$ excl. VAT)
0.50$

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2N3904

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NPN transistor, TO-92, 100mA, TO-92, 40V. Housing: TO-92. Collector current: 100mA. Housing (accordi...
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2N3906

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TIP36C

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TIP35C

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NPN transistor, 25A, TO-247, TO-247, 100V, 100V. Collector current: 25A. Housing: TO-247. Housing (a...
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STK621-140E

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Note: Thick-Film Hybrid IC. Note: VCE voltage 600V. Note: output current 10A. Number of terminals: 2...
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2SC5200

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FUSE-1-000A20F

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Max Continuous current: 1A. Fuse type: Glass (Cylindrical). Fuse properties: fast blow fuse (F). V...
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