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Semiconductors Transistors FET and MOSFET transistors

P-channel transistor, 5.3A, 5.3A, SO, SO-8, 30 v - SI9435BDY

P-channel transistor, 5.3A, 5.3A, SO, SO-8, 30 v - SI9435BDY
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.29$ 2.48$
5 - 9 2.17$ 2.35$
10 - 24 2.10$ 2.27$
25 - 49 2.06$ 2.23$
50 - 79 2.01$ 2.17$
Quantity U.P
1 - 4 2.29$ 2.48$
5 - 9 2.17$ 2.35$
10 - 24 2.10$ 2.27$
25 - 49 2.06$ 2.23$
50 - 79 2.01$ 2.17$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 79
Set of 1

P-channel transistor, 5.3A, 5.3A, SO, SO-8, 30 v - SI9435BDY. P-channel transistor, 5.3A, 5.3A, SO, SO-8, 30 v. ID (T=25°C): 5.3A. Idss (max): 5.3A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.055 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: V-MOS. Original product from manufacturer Vishay. Quantity in stock updated on 26/07/2025, 17:25.

Technical documentation

Equivalent products :

Quantity in stock : 44
FDS9435A

FDS9435A

P-channel transistor, 5.3A, 100nA, SO, SO-8, 30 v. ID (T=25°C): 5.3A. Idss (max): 100nA. Housing: S...
FDS9435A
P-channel transistor, 5.3A, 100nA, SO, SO-8, 30 v. ID (T=25°C): 5.3A. Idss (max): 100nA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 528pF. Cost): 132pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.042 Ohms. RoHS: yes. Spec info: VGS(th) 1V...3V, ID=250uA. Assembly/installation: surface-mounted component (SMD). Td(off): 14 ns. Td(on): 7 ns. Technology: P-Channel PowerTrench MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V
FDS9435A
P-channel transistor, 5.3A, 100nA, SO, SO-8, 30 v. ID (T=25°C): 5.3A. Idss (max): 100nA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 528pF. Cost): 132pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.042 Ohms. RoHS: yes. Spec info: VGS(th) 1V...3V, ID=250uA. Assembly/installation: surface-mounted component (SMD). Td(off): 14 ns. Td(on): 7 ns. Technology: P-Channel PowerTrench MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V
Set of 1
1.46$ VAT incl.
(1.35$ excl. VAT)
1.46$

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