Standard and Rectifier Diodes

Forward current (AV): 3A. IFSM: 200A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). VRRM: 600V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Spec info: IFSM--200Ap t=8.3ms

Forward current (AV): 3A. IFSM: 200A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). VRRM: 600V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Note: center distance 15mm. Spec info: IFSM--200Ap t=8.3ms

Forward current (AV): 3A. IFSM: 200A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). VRRM: 1000V. Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--200Ap t=8.3ms

Forward current (AV): 15mA. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 70V. Cj: 2pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: VHF/UHF detection. MRI (max): 0.2uA. RoHS: yes. Pitch: 4.5x2mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+200°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.41V. Number of terminals: 2. Note: Schottky diode. Quantity per case: 1. Spec info: f=1MHz 2pF

Forward current (AV): 15mA. Housing: SOD-123. Housing (according to data sheet): SOD123. VRRM: 70V. Cj: 2pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: VHF/UHF detection. MRI (max): 0.2uA. Marking on the case: SA. Dimensions: 2.85x1.7x1.35mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.41V. Number of terminals: 2. Note: Schottky diode. Quantity per case: 1. Spec info: f=1MHz 2pF

Forward current (AV): 1A. IFSM: 25A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 5.2x2.7mm ). VRRM: 20V. Cj: 110pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.45V. Number of terminals: 2. Quantity per case: 1

Forward current (AV): 1A. IFSM: 25A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). VRRM: 30 v. Cj: 110pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.55V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--25Ap, t=8.3ms

Forward current (AV): 1A. IFSM: 25A. Housing: SOD-123. Housing (according to data sheet): SOD123 ( 2.85x1.7mm ). VRRM: 40V. Cj: 50pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 1.5mA. MRI (min): 10uA. Marking on the case: SL. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Power: 450mW. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.32V. Number of terminals: 2. Spec info: IFSM--25Ap, t=8.3ms

Forward current (AV): 15mA. IFSM: 50mA. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 60V. Cj: 2.2pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Ultrafast switching. MRI (max): 0.2uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -60...+200°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.41V. Number of terminals: 2. Note: Switching Schottky diode. Note: f=1MHz 2.2pF. Note: VHF/UHF detection

Forward current (AV): 300mA. IFSM: 4A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 100V. Cj: 4pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. MRI (max): 5uA. MRI (min): 25nA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: 0...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 620mV. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--1Ap t=1sec

Forward current (AV): 1A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 6.0x3.4mm ). VRRM: 1000V. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Number of terminals: 2. Note: Ifsm 10Ap. Note: Switching mode Power Rectifiers

Forward current (AV): 130mA. IFSM: 400mA. Housing: DO-34 ( SOD68 ). Housing (according to data sheet): DO-34. VRRM: 80V. Cj: 2pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. MRI (max): 0.5uA. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.2V. Number of terminals: 2. Quantity per case: 1

Forward current (AV): 100mA. IFSM: 500mA. Housing: SOD-323. Housing (according to data sheet): SOD-323 ( 1.7x1.25mm ). VRRM: 80V. Cj: 3pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.2V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM 0.5A (t=1s)

Forward current (AV): 20A. IFSM: 310A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 7.5x5.4mm ). Vrms: 45V. Cj: 720pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.25V. Number of terminals: 2. Quantity per case: 1. Function: Schottky Barrier Rectifier Diode. Spec info: IFSM--310Ap 50Hz t=10ms, 350Ap 60Hz t=8.3ms

Forward current (AV): 3A. IFSM: 800A (tp=5us), 70A (tp=10ms). Housing: DO-214. Housing (according to data sheet): SMC (8.1x6.2x2.6mm). VRRM: 100V. Cj: 115pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. MRI (max): 5mA. MRI (min): 0.5mA. Marking on the case: 3J. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+175°C. Threshold voltage Vf (max): 0.96V. Forward voltage Vf (min): 0.62V

Housing: TO-247. Housing (according to data sheet): TO-247AC. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Note: 920App / 5us. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Note: Dual Schottky Barrier Rectifier Diode

Forward current (AV): 15A. IFSM: 340A. Housing: TO-247. Housing (according to data sheet): TO-247AC. VRRM: 150V. Cj: 340pF. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Note: common cathode. MRI (max): 15mA. MRI (min): 0.1mA. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.19V. Forward voltage Vf (min): 1V. Function: Dual Schottky Barrier Rectifier Diode. Spec info: IFSM--Max

Forward current (AV): 3A. Housing: DO-27. Housing (according to data sheet): DO-27( 5.5x9.5mm ). VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Note: 'Fast Recovery Rectifiers'. Note: 200App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. Housing: DO-27. Housing (according to data sheet): DO-27( 5.5x9.5mm ). VRRM: 400V. Semiconductor material: silicon. Note: 'Fast Recovery Rectifiers'. Note: 200App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. IFSM: 45A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.6x10mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultra-Fast Recovery. MRI (max): 100uA. MRI (min): 20uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD 8x6mm. VRRM: 600V. Dielectric structure: Anode-Cathode. Diode Tff(25°C): 200 ns. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Note: HIGH Speed Rectifier, (Fast Recovery). MRI (max): 100uA. Marking on the case: 3JU. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2V

Forward current (AV): 40A. Forward current (RMS): 62A. IFSM: 570A. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB ( DO-5 ). VRRM: 100V. Dielectric structure: casing connected to the cathode. Semiconductor material: silicon. RoHS: yes. Assembly/installation: screw. Note: M6 thread. Spec info: IFSM--480App / 10mS (100% Vrrm)

Forward current (AV): 40A. Forward current (RMS): 62A. IFSM: 570A. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. VRRM: 1200V. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: High peak current capability. MRI (max): 9mA. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Operating temperature: -65...+190°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V. Note: M6 thread. Spec info: IFSM--480App / 10mS (100% Vrrm)

Forward current (AV): 40A. Forward current (RMS): 62A. IFSM: 570A. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. VRRM: 1600V. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: High peak current capability. MRI (max): 4.5mA. Number of terminals: 1. RoHS: yes. Assembly/installation: Threaded fastening. Operating temperature: -65...+160°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V. Note: M6 thread. Spec info: IFSM--480App / 10mS (100% Vrrm)

Forward current (AV): 40A. Forward current (RMS): 62A. IFSM: 570A. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. VRRM: 400V. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: High peak current capability. MRI (max): 9mA. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Operating temperature: -65...+190°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V. Note: M6 thread. Spec info: IFSM--480App / 10mS (100% Vrrm)