Standard and Rectifier Diodes

Forward current (AV): 0.5A. IFSM: 1A. Housing: SOD-323. Housing (according to data sheet): SOD-323. VRRM: 85V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed diode. Production date: 2014/22. Marking on the case: A6. Number of terminals: 2. RoHS: yes. Spec info: IFSM--4A(t=1us), 1A(t=1ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V

Forward current (AV): 0.2A. IFSM: 2A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 70V. Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 0.5uA. MRI (min): 1nA. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Spec info: IFSM--2Ap, t=1µs. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1V

Forward current (AV): 120mA. IFSM: 0.6A. Housing: SOD-523. Housing (according to data sheet): SOD-523. VRRM: 40V. Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Marking on the case: .W. Number of terminals: 2. RoHS: yes. Spec info: IFSM--600mA t=1s. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V

Forward current (AV): 0.2A. IFSM: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 40V. Cj: 5pF. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Marking on the case: 45. Number of terminals: 3. RoHS: yes. Spec info: IFSM--600mA t=1s. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V

Forward current (AV): 0.2A. IFSM: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 40V. Cj: 5pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Marking on the case: 46. Number of terminals: 3. RoHS: yes. Spec info: IFSM--600mA t=1s. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V

Forward current (AV): 0.2A. IFSM: 0.6A. Housing: SOT-143. Housing (according to data sheet): SOT-143B. VRRM: 40V. Cj: 5pF. Quantity per case: 2. Dielectric structure: independent. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Marking on the case: 47 s. Number of terminals: 4. RoHS: yes. Spec info: IFSM--600mA t=1s. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V

Forward current (AV): 250mA. IFSM: 1A. Housing: DO-34 ( SOD68 ). Housing (according to data sheet): DO-34 ( 3.4x1.6mm ). VRRM: 125V. Cj: 4pF. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.5us. Semiconductor material: silicon. Function: Low-leakage diode. Note: low reverse current. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Spec info: IFSM--1A t=1mS, 4A t=1uS. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.78V

VRRM: 70V. Average Rectified Current per Diode: 0.07A. Diode type: schottky. Forward Voltage (Max): <1V / 0.015A. Mounting Type: SMD. Reverse Leakage Current: 100nA / 50V. Reverse Recovery Time (Max): 5ns. Series: BAS

Forward current (AV): 0.2A. IFSM: 4A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. VRRM: 30 v. Cj: 10pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Glass Fast Switching Schottky Barrier Diodes. MRI (max): 2uA. Number of terminals: 2. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Spec info: IFSM--4A t=10ms. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V

VRRM: 30V. Average Rectified Current per Diode: 0.2A. Housing: 10pF. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. VRRM: 30 v. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.80V / 0.1A. Mounting Type: SMD. Reverse Leakage Current: 2uA / 25V. Series: BAS. Reverse Recovery Time (Max): 2uA. Information: 0.2uA. MSL: 200mW. RoHS: yes. Spec info: IFSM 0.6A t=1s. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V

Forward current (AV): 30mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 4 v. Quantity per case: 1. Dielectric structure: Anode-Cathode. Double: no. Semiconductor material: Sb. Function: Mixer applications in VHF/UHF range. Note: screen printing/SMD code 53s. MRI (max): 1.25uA. MRI (min): 0.25uA. Marking on the case: 53s. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: RF 8 Ohms, max 15 Ohms / CT 0.55pF. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 0.6V. Forward voltage Vf (min): 0.2V

Forward current (AV): 130mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 4 v. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: Sb. Function: Mixer applications in VHF/UHF range. Note: screen printing/SMD code 54s. MRI (max): 1.25uA. MRI (min): 0.25uA. Marking on the case: 54s. Number of terminals: 3. RoHS: yes. Spec info: RF 8 Ohms, max 15 Ohms / CT 0.55pF. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.6V. Forward voltage Vf (min): 0.2V

Forward current (AV): 30mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 4 v. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: Mixer applications in VHF/UHF range. Note: screen printing/SMD code 55s. MRI (max): 1.25uA. MRI (min): 0.25uA. Marking on the case: 55s. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: RF 8 Ohms, max 15 Ohms / CT 0.55pF. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 0.6V. Forward voltage Vf (min): 0.2V

Forward current (AV): 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 35V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: VHF/UHF Band Switching diode. Marking on the case: A2. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: 0.8...1pF (f=1MHz), rD--0.5...0.7 Ohm. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.2V

Forward current (AV): 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 35V. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: Sb. Function: VHF/UHF Band Switching diode 10MHz. Marking on the case: AUs. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: 0.75...1pF (f=1MHz), rf--0.4...0.7 Ohm. Assembly/installation: surface-mounted component (SMD). Tf (type): 120ns. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 0.75V

VRRM: 100V. Forward current (AV): 0.1A. IFSM: 0.75A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. RoHS: yes. Forward voltage Vf (min): 0.4V. Cj: 2pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. MRI (max): 20uA. MRI (min): 0.1uA. Number of terminals: 2. Spec info: 750mAp t=10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 0.45V

Housing: DO35. VRRM: 30V. Average Rectified Current per Diode: 0.2A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <1V / 0.2A. Mounting Type: THT. Reverse Leakage Current: 0.5uA / 25V. Reverse Recovery Time (Max): 5ns. Series: BAT4. MSL: n/a

Housing: DO35. VRRM: 30V. Average Rectified Current per Diode: 0.2A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.33V / 2mA. Mounting Type: THT. Reverse Leakage Current: 0.5uA / 25V. Reverse Recovery Time (Max): 5ns. Series: BAT4. MSL: n/a

VRRM: 100V. Forward current (AV): 150mA. IFSM: 750mA. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Cj: 6pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. Number of terminals: 2. RoHS: yes. Spec info: IFSM 0.75Ap t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.25V

Forward current (AV): 350mA. IFSM: 7.5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 40V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 10 ns. Semiconductor material: Sb. Function: Schottky diode. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--7.5Ap t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.5V

Forward current (AV): 200mA. IFSM: 600mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 30 v. Cj: 10pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. MRI (max): 2uA. Marking on the case: L4. Number of terminals: 3. Spec info: IFSM--600mAp (t=10ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 800mV. Forward voltage Vf (min): 240mV

Forward current (AV): 200mA. IFSM: 600mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 30 v. Cj: 10pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Dual Schottky diode. MRI (max): 2uA. Marking on the case: L42 or V3. Number of terminals: 3. RoHS: yes. Spec info: IFSM--600mAp (t=10ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 800mV. Forward voltage Vf (min): 240mV

Forward current (AV): 200mA. IFSM: 600mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 30 v. Cj: 10pF. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Dual Schottky diode. MRI (max): 2uA. Marking on the case: L43 or W1. Number of terminals: 3. RoHS: yes. Spec info: IFSM--600mAp (t=10ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 800mV. Forward voltage Vf (min): 240mV

Housing: PCB soldering (SMD). Housing: SOD-323. Forward current [A]: 0.3A. RoHS: yes. Component family: Silicon Schottky diode. Configuration: surface-mounted component (SMD). Number of terminals: 2. Ifsm [A]: 1A. Forward voltage Vfmax (V): 0.4V @ 10mA. Close voltage (repetitive) Vrrm [V]: 40V. Leakage current on closing Ir [A]: 1uA..100uA. Switching speed (regeneration time) tr [sec.]: 5 ns. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

Forward current (AV): 200mA. IFSM: 600mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 30 v. RoHS: yes. Cj: 10pF. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Dual Schottky diode. MRI (max): 2uA. Marking on the case: L44 or V4. Number of terminals: 3. Spec info: IFSM--600mAp (t=10ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 800mV. Forward voltage Vf (min): 240mV