Standard and Rectifier Diodes

Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 50V. Cj: 8pF. Conditioning: roll. Conditioning unit: 10000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 5uA. Marking on the case: BTA86S. Number of terminals: 2. Temperature: +125°C. Dimensions: 3.9x1.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 900mV. Forward voltage Vf (min): 300mV. Spec info: IFMS 5Ap/10ms

Forward current (AV): 250mA. IFSM: 1A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80 ( 3.5x1.5mm ). VRRM: 250V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Function: Small Signals Switching Diodes, High Voltage

Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 60V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Note: IFSM--1App tp= 1s, Tj=25°C. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V

Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 200V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. Spec info: IFSM--1App tp=1s, Tj=25°C

Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 250V. Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Note: S. Note: IFSM--1App tp= 1s, Tj=25°C. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V

Forward current (AV): 0.6A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35 ( 1.6x3.9mm ). VRRM: 75V. Semiconductor material: silicon. Note: Ifsm--4A/1uS. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Note: Small Signals Switching Diode

Forward current (AV): 200mA. IFSM: 1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 80V. Cj: 2pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ultra High Speed Switching. Note: screen printing/SMD code A1s. MRI (max): 50uA. MRI (min): 0.15uA. Marking on the case: A1s. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V. Spec info: Ifsm--4.5A t=1us, 1A t=1ms

Forward current (AV): 200mA. IFSM: 1A. Housing: SOT-323. Housing (according to data sheet): SOT323. VRRM: 85V. RoHS: yes. Cj: 2pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ultra High Speed Switching. Note: screen printing/SMD code A1. MRI (max): 50uA. MRI (min): 0.15uA. Marking on the case: A1. Number of terminals: 3. Temperature: +150°C. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V. Spec info: Ifsm--4.5A t=1us, 1A t=1ms

Forward current (AV): 0.115A. VRRM: 25V. Semiconductor material: silicon

Forward current (AV): 0.115A. VRRM: 35V. Semiconductor material: silicon

Forward current (AV): 8A. IFSM: 155A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 7.5x5.4mm ). VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. MRI (max): 20mA. MRI (min): 5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.83V. Forward voltage Vf (min): 0.75V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Axial Leads. Spec info: Ifsm 132Ap t=10us

Forward current (AV): 0.5A. IFSM: 30A. Housing (according to data sheet): 7.3x22mm. VRRM: 12000V. Cj: 1.8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. MRI (max): 25uA. MRI (min): 1uA. Number of terminals: 2. Dimensions: 7.3x22mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 10V

Housing: DO-41. Forward current (AV): 1A. IFSM: 30A. Housing (according to data sheet): DO-41 ( 2.6x4.8mm ). VRRM: 1300V. RoHS: yes. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): DO-41. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--30Ap t=8.3mS

Forward current (AV): 1.2A. VRRM: 50V. Semiconductor material: silicon

Forward current (AV): 0.25A. IFSM: 20A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass passivated. VRRM: 2000V. Quantity per case: 1. Diode Tff(25°C): 300 ns. Semiconductor material: silicon. MRI (max): 2uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2.4V. Spec info: IFSM--20Ap t=10ms

Forward current (AV): 0.75A. VRRM: 600V. Semiconductor material: silicon

Forward current (AV): 1.5A. VRRM: 650V. Semiconductor material: silicon. Note: GR

Forward current (AV): 3A. IFSM: 50A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Function: heat sink mounting. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Marking on the case: 97053100. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V. Spec info: IFSM--50Ap (t=10ms)

Forward current (AV): 3A. IFSM: 50A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass ( 4.2x4.3mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V. Spec info: IFSM--50Ap (tp=10ms)

Forward current (AV): 2A. IFSM: 70A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). VRRM: 200V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: Ifms 70Ap

Forward current (AV): 2A. IFSM: 70A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). VRRM: 800V. RoHS: yes. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: Ifms 70Ap

Forward current (AV): 2A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. MRI (max): 140uA. MRI (min): 3uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V. Spec info: IFSM--30Ap, t=10ms

Forward current (AV): 4A. Housing (according to data sheet): SOD-57. VRRM: 1200V. Semiconductor material: silicon. Note: 1000 ns. Note: 30App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 12A. VRRM: 1500V. Semiconductor material: silicon. Note: Monitor CRT-GI. Note: TO-220, SOD113 (plastic housing). Note: 48...82kHz

Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: Ifsm--200App t=10mS