Standard and Rectifier Diodes

Forward current (AV): 5A. VRRM: 500V. Double: Double. Semiconductor material: silicon. Note: Vf<1.05V. Note: S-L ->I<-. Note: 50A/10ms. Tr: 50 ns. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.95V

Forward current (AV): 30A. IFSM: 200A. Housing: TO-3P ( TO-218 SOT-93 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 70 ns. Semiconductor material: silicon. Note: metal part connected to the cathode. MRI (max): 5mA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--200Ap t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.8V

Forward current (AV): 1.4A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Semiconductor material: silicon. Function: Fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tr: 200 ns. Threshold voltage Vf (max): 1.3V

Forward current (AV): 1.25A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Semiconductor material: silicon. Note: Fast Silicon Mesa Rectifiers. Note: 30App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 400V. Conditioning unit: 2500. Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V

Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1000V. Conditioning unit: 2500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V

Forward current (AV): 1A. IFSM: 20A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 40V. Cj: 220pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 10mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--20A t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.55V

Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 600V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 800V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Number of terminals: 2. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V

Housing: SOD-57. VRRM: 200V. Average Rectified Current per Diode: 2A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.07V / 3A. Mounting Type: THT. Reverse Recovery Time (Max): 25ns. Series: BYV27

VRRM: 200V. Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass ( 4.5x3.6mm ). RoHS: yes. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.07V. Forward voltage Vf (min): 0.88V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultra Fast Avalanche Sinterglass Diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. Spec info: IFSM--50App, t=10mS. Assembly/installation: PCB through-hole mounting

Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass ( 4.5x3.6mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Ultra Fast Avalanche Sinterglass Diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50App, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.07V. Forward voltage Vf (min): 0.88V

Forward current (AV): 3.5A. IFSM: 90A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 200V. Cj: 190pF. Conditioning unit: 2500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Avalanche Sinterglass Diode Fast'. Production date: 201412. MRI (max): 100uA. MRI (min): 1uA. Marking on the case: BYV28-200. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--90A, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.89V

Forward current (AV): 3.1A. IFSM: 90A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 600V. Cj: 125pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultra fast low-loss controlled avalanche rect.. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--90A, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.93V

Forward current (AV): 9A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC ( SOD59 ). VRRM: 500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High-speed switching. MRI (max): 50uA. MRI (min): 2uA. Number of terminals: 2. Temperature: +150°C. RoHS: yes. Spec info: Ifsm 110Ap t=8.3ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 0.9V

VRRM: 200V. Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: ULTRA FAST. Note: common cathode. Marking on the case: BYV32-200. Equivalents: BYV32-200G, BYV32-200-E3/45. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100A t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.01V. Forward voltage Vf (min): 0.74V

Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB, SOT78. VRRM: 500V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High-speed switching. Marking on the case: BYV34-500. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 120A t=10ms, 132A t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.87V

Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass passivated. VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Silicon Mesa Rectifiers. Production date: 2013/40. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFMS 50Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V

Forward current (AV): 15A. IFSM: 75A. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). VRRM: 150V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: Rectifier diodes, Ultrafast, rugged. Note: common cathode. MRI (max): 1mA. MRI (min): 0.5mA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Spec info: Ifsm--75Ap t=10ms / diode. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.78V

Forward current (AV): 15A. IFSM: 75A. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). VRRM: 200V. RoHS: yes. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: Rectifier diodes, Ultrafast, rugged. MRI (max): 1mA. MRI (min): 0.5mA. Number of terminals: 3. Temperature: +150°C. Spec info: Ifsm--75Ap t=10ms / diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.78V

Forward current (AV): 12.7A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220-2. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ultra fast rectifier diode. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. Temperature: +150°C. RoHS: yes. Spec info: Ifsm 150Ap t=10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.83V

Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 200V. Semiconductor material: silicon. Note: GI S. Note: 100App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 800V. Semiconductor material: silicon. Note: GI S. Note: 80App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 8A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Cj: 45pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: SWITCHMODE Power Rectifiers. MRI (max): 600uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100A (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.85V