Standard and Rectifier Diodes

Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Cj: 50pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: Mesa Rectifiers. MRI (max): 5uA. MRI (min): 0.1uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.9V

Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 200V. Semiconductor material: silicon. Note: GI S. Note: 100App/10ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting

Forward current (AV): 8A. Housing: TO-220. Housing (according to data sheet): TO-220B. VRRM: 200V. Semiconductor material: silicon. Note: SWITCHMODE Power Rectifiers. Note: Ifsm 100A/10ms. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. IFSM: 70A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 600V. Cj: 85pF. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery controlled avalanche rectifiers'. MRI (max): 150uA. MRI (min): 1uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--70App / 10mS. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.25V

Forward current (AV): 3A. IFSM: 70A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 800V. Cj: 75pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast soft-recovery controlled avalanche rectifier. MRI (max): 150uA. MRI (min): 1uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--70Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.25V

Forward current (AV): 0.36A. VRRM: 1600V. Semiconductor material: silicon. Note: GI. Note: BYX10GP

Forward current (AV): 1.2A. VRRM: 350V. Semiconductor material: silicon. Note: GI-S

Forward current (AV): 10A. VRRM: 1200V. Semiconductor material: silicon. Note: 11mm, 6-sided. Note: GI-L. Note: M5 thread

Forward current (AV): 1A. VRRM: 300V. Semiconductor material: silicon. Note: GI

Forward current (AV): 20mA. Housing: DO-214. Housing (according to data sheet): SMB ( 4.6x3.7x2.1mm ). VRRM: 45V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: LED driver circuit 20mA/45V. Note: constant current LED driver. Number of terminals: 2. RoHS: yes. Spec info: for a dissipation of 1W without cooling, max 25V. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C

Forward current (AV): 40mA. Housing: DO-214. Housing (according to data sheet): SMB ( 4.6x3.7x2.1mm ). VRRM: 45V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: LED driver circuit 40mA/45V. Note: constant current LED driver. Number of terminals: 2. RoHS: yes. Spec info: for a dissipation of 1W without cooling, max 25V. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C

Forward current (AV): 15A. IFSM: 150A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 100 ns. Semiconductor material: Sb. Function: Schottky diode. Number of terminals: 3. Spec info: Ifsm 150A (50Hz), Vf max 0.55V. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

Forward current (AV): 30A. IFSM: 300A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 100 ns. Semiconductor material: Sb. Function: Schottky diode. Number of terminals: 3. Spec info: Ifsm--300A (50Hz), Vf max--0.55V. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

Note: Uf 0.98V. Note: Ultra Fast Recovery Diode. Note: Ifsm--65App

Forward current (AV): 5A. Housing: TO-220. Housing (according to data sheet): TO-220. VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. Note: ULTRA FAST. Note: Ifsm--50A10mS. Number of terminals: 3. Spec info: IFSM--50A t=10mS. Assembly/installation: PCB through-hole mounting

Forward current (AV): 20A. IFSM: 275A. Housing: DO-4. Housing (according to data sheet): DO-4P. VRRM: 600V. Dielectric structure: casing connected to the cathode. Used for: can also be used for solar panel systems. Function: power diode. Bushing Thread: M5. Spec info: 275App/10ms. Weight: 6g. Assembly/installation: screw. Operating temperature: -25...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.1V

Forward current (AV): 20A. IFSM: 275A. Housing: DO-4. Housing (according to data sheet): DO-4P. VRRM: 600V. Dielectric structure: casing connected to the anode. Function: power diode. Bushing Thread: M5. Spec info: 275App/10ms. Weight: 6g. Assembly/installation: screw. Operating temperature: -25...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.1V

Forward current (AV): 40A. IFSM: 600A. Housing: DO-5. Housing (according to data sheet): DO-5P. VRRM: 800V. Dielectric structure: casing connected to the cathode. Used for: can also be used for solar panel systems. Function: power diode. Bushing Thread: M6. Spec info: 600App/10ms. Assembly/installation: screw. Operating temperature: -25...+150°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1V

Forward current (AV): 40A. IFSM: 600A. Housing: DO-5. Housing (according to data sheet): DO-5P. VRRM: 800V. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Function: power diode. Bushing Thread: M6. Spec info: 600App/10ms. Assembly/installation: screw. Operating temperature: -25...+150°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1V

Housing: DO-205. Housing (according to data sheet): DO-205AC. Used for: can also be used for solar panel systems. Note: Reversed DO-8P, M12 thread. Note: Threaded housing--Anode, (high current)

Forward current (AV): 15.9A. IFSM: 300A. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3. VRRM: 600V. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'Fast Recovery Rectifiers'. Number of terminals: 3. Temperature: +125°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.6V

Forward current (AV): 20A. IFSM: 255A. Housing: TO-220. Housing (according to data sheet): TO-220L. VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: Ultra Fast Recovery Rectifiers. MRI (max): 500uA. MRI (min): 20uA. Number of terminals: 3. Spec info: trr 4us (IF=0.9A, IR=1.5A). Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V

Forward current (AV): 25A. IFSM: 350A. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: trr 4us (IF=0.9A, IR=1.5A). Note: cathode (1), anode (2), not connected (3). Note: insulated TO220 package. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 3. RoHS: yes. Spec info: 350Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V

Forward current (AV): 0.2A. Housing: SOT-323. Housing (according to data sheet): SOT-323. VRRM: 20V. Double: Double. Semiconductor material: silicon. Note: Ultra High Speed Switching. Note: screen printing/CMS code UMD3. Marking on the case: UMD3. Assembly/installation: surface-mounted component (SMD)

Forward current (AV): 20mA. IFSM: 500mA. Housing (according to data sheet): 3x12mm. VRRM: 12000V. Cj: 1.8pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. MRI (min): 5uA. Dimensions: 3x12mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 40V. Number of terminals: 2. Quantity per case: 1