Standard and Rectifier Diodes

Forward current (AV): 5A. VRRM: 200V. Semiconductor material: silicon. Note: GI, S

Forward current (AV): 3A. VRRM: 1500V. Semiconductor material: silicon. Note: 9x7mm. Note: MONITOR DAMP. Note: D09.15

Forward current (AV): 1A. Housing: DO-214. Housing (according to data sheet): DO-214AC (SMA), 4.6x2.7mm. VRRM: 200V. Semiconductor material: silicon. Note: Super Fast Surface Mount Rectifier Diode. Note: 30App/8.3ms, ES1D SMD marking. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD)

Forward current (AV): 1A. Housing: DO-214. Housing (according to data sheet): DO-214AC (SMA), 4.6x2.7mm. VRRM: 400V. Semiconductor material: silicon. Note: Super Fast Surface Mount Rectifier Diode. Note: 30App/8.3ms, ES1G SMD marking. Number of terminals: 2

Forward current (AV): 1A. Housing: DO-214. Housing (according to data sheet): DO-214AC (SMA), 4.6x2.7mm. VRRM: 600V. Semiconductor material: silicon. Note: Super Fast Surface Mount Rectifier Diode. Note: 30App/8.3ms, ES1J SMD marking. Number of terminals: 2

Forward current (AV): 30A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Double: Double. Semiconductor material: Sb. Note: dual silicon diode. Note: Schottky diode. Note: Ifsm--250A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting

Forward current (AV): 5A. IFSM: 80A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3FP. VRRM: 1500V. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Trr Diode (Min.): 0.15us. Semiconductor material: silicon. Function: Low Loss Super High Speed ​​Rectifier. Note: DAMPER +MODULATION. Marking on the case: CO23M-15 (C023M-15). Number of terminals: 3. Spec info: IFSM--50/80Ap, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 1.8V

Forward current (AV): 3A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 200V. Double: Double. Semiconductor material: silicon. Note: ULTRA FAST ->l<-. Note: Ifsm--50A/10mS. Assembly/installation: PCB through-hole mounting

Forward current (AV): 0.8A. VRRM: 600V. Semiconductor material: silicon. Note: GI, S

Forward current (AV): 6A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). VRRM: 200V. Cj: 55pF. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Dual Fast Recovery Diode. Note: common cathode. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100A (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1A. Housing (according to data sheet): TS-1 ( 2.5x3.3mm ). VRRM: 400V. Semiconductor material: silicon. Note: 30Ap/8.3ms

Forward current (AV): 1A. VRRM: 200V. Semiconductor material: silicon. Note: GL

Forward current (AV): 3A. VRRM: 100V. Semiconductor material: silicon. Note: GL. Note: 125A/8.3ms

Forward current (AV): 3A. VRRM: 150V. Semiconductor material: silicon. Note: GL. Note: 125A/8.3ms

Forward current (AV): 8A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Double: Double. Semiconductor material: silicon. Note: common cathode. Note: Dual Ultrafast Plastic Rectifier. Note: Ifsm 125Aps/8.3ms. Number of terminals: 3. Assembly/installation: PCB through-hole mounting

Forward current (AV): 15A. IFSM: 300A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 200V. Cj: 175pF. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Double ultra-fast rectifier diode. common cathode. Note: common cathode. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm--300Ap, t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V

Forward current (AV): 15A. IFSM: 300A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 600V. Cj: 145pF. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Double ultra-fast rectifier diode. common cathode. Note: common cathode. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm--300Ap, t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V

Forward current (AV): 5A. VRRM: 1200V. Semiconductor material: silicon. Note: high voltage and high reliability. Note: High Speed ​​Switching. Note: Ifsm--30App

Forward current (AV): 6A. IFSM: 60A. Housing: TO-220FP. Housing (according to data sheet): TO-220F-2L. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35ms. Semiconductor material: silicon. Function: Ultrafast with soft recovery. Number of terminals: 2. RoHS: yes. Spec info: Low forward voltage. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1V

Forward current (AV): 10A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220F-2L. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 32 ns. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ultrafast with soft recovery (IF=1A), <35ns. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.15V. Forward voltage Vf (min): 1.1V

Forward current (AV): 10A. IFSM: 50A. Housing: TO-220FP. Housing (according to data sheet): TO-220F-2L. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 34 ns. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Spec info: Ultrafast with soft recovery (IF=1A), <40ns. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 2.2V. Forward voltage Vf (min): 2V

Forward current (AV): 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220F-3. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Trr Diode (Min.): 90 ns. Semiconductor material: silicon. Function: 'Damper + Modulation Diode'. Note: Dd--Vf--1.4...1.6V, Dm--Vf--2.0...2.2V. Note: Dd--Trr--120ns, Dm--Trr--90ns. Number of terminals: 3. RoHS: yes. Spec info: Dd--1500V/6A/60Ap, Dm--600V/20A/120Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C

Forward current (AV): 50A. IFSM: 280A. Housing: TO-247. Housing (according to data sheet): TO-247-2LD, CASE 340CL. VRRM: 1200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: SMPS, Solar Inverter, UPS, Power Switching Circuits. MRI (max): 400uA. MRI (min): 200uA. Number of terminals: 2. Schottky diode?: yes. Spec info: Ifsm--280App. Assembly/installation: PCB through-hole mounting. Technology: Silicon Carbide (SiC) Schottky. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.45V

Forward current (AV): 10A. IFSM: 60A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 40V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Trr Diode (Min.): 100 ns. Double: Double. Semiconductor material: Sb. Note: Schottky diode. Note: dual silicon diode. Note: Ifsm--60A/50Hz. Number of terminals: 3. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

Forward current (AV): 4A. Housing: TO-220. Housing (according to data sheet): TO-220/2. VRRM: 600V. Semiconductor material: silicon. Number of terminals: 2. Assembly/installation: PCB through-hole mounting