Standard and Rectifier Diodes

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 400V. Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Equivalents: HER105G. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 1000V. Cj: 20pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Equivalents: HER108G. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V

Forward current (AV): 3A. IFSM: 150A peak. Housing: DO-27. Housing (according to data sheet): DO-27 (5.6 x 9.5mm). VRRM: 200V. Cj: 70pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 150uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 150Ap T=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -60...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). VRRM: 300V. Cj: 80pF. Quantity per case: 1. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap T=8.3ms. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Forward current (AV): 3A. IFSM: 150A. Housing: DO-27. Housing (according to data sheet): DO-27 (9.5x5.6mm). VRRM: 400V. Cj: 70pF. Quantity per case: 1. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 150uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 150Ap T=8.3ms. Weight: 0.4g. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). VRRM: 1000V. Cj: 80pF. Quantity per case: 1. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap T=8.3ms. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Forward current (AV): 6A. IFSM: 150A. Housing: R-6. Housing (according to data sheet): R-6 (8.8x7mm). VRRM: 1000V. Cj: 65pF. Semiconductor material: silicon. Function: High Speed ​​Switching. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Spec info: 150Ap/8.3ms. Assembly/installation: PCB through-hole mounting. Tr: 75 ns. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.3V

Forward current (AV): 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). VRRM: 600V. Semiconductor material: silicon. Note: Ultrafast. Note: Ifsm--60Aps. Pd (Power Dissipation, Max): 14W. Assembly/installation: surface-mounted component (SMD)

Forward current (AV): 8A. IFSM: 60A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 600V. Cj: 10pF. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 18 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Marking on the case: HFA08TB60. Equivalents: 39.2k Ohms. Number of terminals: 2. Pd (Power Dissipation, Max): 36W. RoHS: yes. Spec info: IFRM 24A. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.4V

Forward current (AV): 8A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). VRRM: 600V. Semiconductor material: silicon. Note: Ultrafast. Note: Ifsm 60Aps. Pd (Power Dissipation, Max): 36W. Assembly/installation: surface-mounted component (SMD)

Forward current (AV): 15A. IFSM: 50A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 600V. Cj: 25pF. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 42 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. MRI (max): 400uA. MRI (min): 1uA. Marking on the case: HFA15TB60. Number of terminals: 2. RoHS: yes. Spec info: Trr 19ns, (IF=1A). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.3V

Forward current (AV): 25A. IFSM: 225A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 23 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. MRI (max): 600uA. MRI (min): 1.5uA. Equivalents: VS-HFA25TB60-M3. Number of terminals: 2. RoHS: yes. Spec info: IFSM--225Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.3V

Forward current (AV): 30A. IFSM: 150A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 600V. Cj: 25pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 19 ns. Semiconductor material: silicon. Function: Ultra Fast Soft Recovery Diode. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 150Ap, t=8.33ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.3V

Forward current (AV): 6A. VRRM: 800V. Quantity per case: 1. Semiconductor material: silicon. Note: D30. Note: M4 thread. Assembly/installation: PCB through-hole mounting

Forward current (AV): 0.2A. IFSM: 2A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80 ( 3.4x1.6mm ). VRRM: 100V. Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High Speed ​​Switching Rectifiers. MRI (max): 50uA. MRI (min): 25nA. Number of terminals: 2. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: IFSM--2Ap (tp=1us). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.62V

Forward current (AV): 1A. VRRM: 600V. Semiconductor material: silicon. Note: SAMSUNG

Forward current (AV): 0.1A. VRRM: 80V. Double: Double. Semiconductor material: silicon. Note: dual silicon diode

Housing: SOD123. VRRM: 30V. Average Rectified Current per Diode: 0.5A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): 0.43V / 0.5A. Mounting Type: SMD. Reverse Leakage Current: 130uA / 30V. Product series: MBRB. MSL: 1

Forward current (AV): 10A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220A-2P. VRRM: 100V. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 6mA. MRI (min): 0.1mA. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.71V

Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. VRRM: 100V. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Dual Schottky Barrier Rectifier Diode. MRI (max): 0.008mA. MRI (min): 8uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 120A (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.88V. Forward voltage Vf (min): 0.78V

Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. VRRM: 150V. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Dual Schottky Barrier Rectifier Diode. MRI (max): 0.008mA. MRI (min): 8uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 120A (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.88V. Forward voltage Vf (min): 0.78V

Forward current (AV): 10A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2P. VRRM: 200V. Semiconductor material: Sb. Note: Schottky rectifier diode. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting

Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Dual Schottky Barrier Rectifier Diode. MRI (max): 0.2mA. MRI (min): 0.2mA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 120A (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.99V. Forward voltage Vf (min): 0.87V

Forward current (AV): 10A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 45V. Semiconductor material: Sb. Note: B1045. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting

Forward current (AV): 10A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. MRI (max): 6mA. MRI (min): 0.1mA. Marking on the case: B1060. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.7V