Standard and Rectifier Diodes

Housing: TO220. VRRM: 200V. Average Rectified Current per Diode: 10A. Diode type: schottky. Forward Voltage (Max): <0.90V / 10A. Mounting Type: THT. Reverse Leakage Current: 1mA / 200V. Series: MBR20

Forward current (AV): 10A/diode. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 45V. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Function: Dual Schottky Barrier Rectifier Diode. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: total 20A, IFSM 150App. Assembly/installation: PCB through-hole mounting

Forward current (AV): 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 60V. Quantity per case: 2. Dielectric structure: common cathode. Note: Dual Schottky Barrier Rectifier Diode. Note: 20A/150App. Assembly/installation: PCB through-hole mounting

Forward current (AV): 30A. IFSM: 250A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 45V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 2. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Dual Schottky diode. MRI (max): 60mA. MRI (min): 1mA. Number of terminals: 3. RoHS: yes. Spec info: IFSM--250Ap, t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.72V. Forward voltage Vf (min): 0.6V

Forward current (AV): 30A. IFSM: 250A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 60V. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: silicon. Function: Dual Schottky diode. MRI (max): 60mA. MRI (min): 1mA. Number of terminals: 3. RoHS: yes. Spec info: IFSM--250Ap, t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.65V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 9.5x5.0mm ). VRRM: 100V. Conditioning: roll. Conditioning unit: 1500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Marking on the case: B3100. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Spec info: IFMS 150App/8.3ms, 60Hz. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.69V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 9.5x5.0mm ). VRRM: 60V. Conditioning: roll. Conditioning unit: 1500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Marking on the case: B340. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Spec info: IFMS 80App/8.3ms, 60Hz. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.5V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 9.5x5.0mm ). VRRM: 60V. Conditioning: roll. Conditioning unit: 1500. Quantity per case: 1. Semiconductor material: Sb. Marking on the case: B360. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Spec info: IFMS 150App/8.3ms, 60Hz. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.08V. Forward voltage Vf (min): 0.6V

Forward current (AV): 40A. IFSM: 80A. Housing: TO-220. Housing (according to data sheet): TO-220 CASE 221A. VRRM: 250V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: Sb. Function: Switch-mode Schottky, Power Rectifier. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.97V. Forward voltage Vf (min): 0.71V

Housing: TO218. VRRM: 45V. Average Rectified Current per Diode: 20A. Diode type: schottky. Forward Voltage (Max): <0.60V / 20A. Mounting Type: THT. Reverse Leakage Current: 1mA / 45V. Series: MBR40

Forward current (AV): 40A (2x20A). IFSM: 400A (2x200A). Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 45V. Quantity per case: 2. Dielectric material: common cathode. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -60...+150°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.7V

Forward current (AV): 7.5A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 45V. Semiconductor material: Sb. Note: diode for switching power supply. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting

VRRM: 200V. Average Rectified Current per Diode: 10A. Diode type: schottky. Mounting Type: SMD. Reverse Leakage Current: 1mA / 200V. Series: MBRB

Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Forward current [A]: 2 X 3A. RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Configuration: surface-mounted component (SMD). Number of terminals: 3. Ifsm [A]: 75A. Forward voltage Vfmax (V): 0.7V @ 3A. Close voltage (repetitive) Vrrm [V]: 50V. Leakage current on closing Ir [A]: 0.1mA..15mA. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C

Forward current (AV): 8A. IFSM: 75A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): Dpak-3. VRRM: 35V. Function: 'High Voltage Power Schottky'. MRI (max): 35mA. MRI (min): 1.4mA. Marking on the case: 853LG. RoHS: yes. Schottky diode?: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.51V. Forward voltage Vf (min): 0.41V

Forward current (AV): 20A. IFSM: 150A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 100V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Note: dual silicon diode. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 150Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.75V

Forward current (AV): 1A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AA. VRRM: 40V. Semiconductor material: Sb. Note: Vf 0.6V/1A. Note: screen printing/SMD code B14L. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD)

Forward current (AV): 1A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA. VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 0.5mA. Marking on the case: B19. Number of terminals: 2. RoHS: yes. Spec info: screen printing/SMD code B19. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V

Forward current (AV): 3A. IFSM: 130A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B310. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. Spec info: Vf 0.79V/3A, (iF=3.0A, TJ=25°C)

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 1mA. Marking on the case: B320. Number of terminals: 2. RoHS: yes. Spec info: Vf 0.84V/3A, (iF=3.0A, TJ=25°C). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.84V. Forward voltage Vf (min): 0.84V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 30 v. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B33. Number of terminals: 2. RoHS: yes. Spec info: Vf 0.50V/3A, (If=3.0A, TJ=25°C). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B34. Number of terminals: 2. RoHS: yes. Spec info: Vf 0.525V/3A, (iF=3.0A, TJ=25°C). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.525V. Forward voltage Vf (min): 0.525V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMB CASE 403A-03 ( 4.32x3.56mm ). VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B36. Number of terminals: 2. RoHS: yes. Spec info: Vf 0.74V/3A, (iF=3.0A, TJ=25°C). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.74V. Forward voltage Vf (min): 0.74V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B36. Equivalents: Vishay VS-MBRS360-M3/9AT. Number of terminals: 2. RoHS: yes. Spec info: Vf 0.74V/3A, (iF=3.0A, TJ=25°C). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.74V. Forward voltage Vf (min): 0.74V

Forward current (AV): 75A. IFSM: 1200A. Housing: TO-240. Housing (according to data sheet): TO-240AA. VRRM: 1200V. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: diode module. 'Fast Recovery Epitaxial Diode (FRED)'. Note: Ifsm--TVJ=45°C; t=10ms (50 Hz) 1200A. Note: dimensions 92x20.8x30mm. Note: 2 diode module. Number of terminals: 3. RoHS: yes. Spec info: insulation 3600V. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.58V. Forward voltage Vf (min): 1.8V