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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

528 products available
Products per page :
Quantity in stock : 319
MUR420

MUR420

Forward current (AV): 4A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): D0-201AD (...
MUR420
Forward current (AV): 4A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 200V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Marking on the case: MUR420. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 0.89V. Forward voltage Vf (min): 0.71V. Number of terminals: 2. Quantity per case: 1
MUR420
Forward current (AV): 4A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 200V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Marking on the case: MUR420. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 0.89V. Forward voltage Vf (min): 0.71V. Number of terminals: 2. Quantity per case: 1
Set of 1
0.86$ VAT incl.
(0.80$ excl. VAT)
0.86$
Quantity in stock : 525
MUR460

MUR460

Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( ...
MUR460
Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 600V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. MRI (max): 10uA. MRI (min): 5uA. Marking on the case: MUR460. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.28V. Forward voltage Vf (min): 1.05V. Number of terminals: 2. Quantity per case: 1
MUR460
Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 600V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. MRI (max): 10uA. MRI (min): 5uA. Marking on the case: MUR460. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.28V. Forward voltage Vf (min): 1.05V. Number of terminals: 2. Quantity per case: 1
Set of 1
0.92$ VAT incl.
(0.85$ excl. VAT)
0.92$
Quantity in stock : 152
MUR480E

MUR480E

Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( ...
MUR480E
Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5.3mm ) CASE267–05. VRRM: 800V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. MRI (max): 900uA. MRI (min): 25uA. Marking on the case: MUR480E. Equivalents: MUR480ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V. Number of terminals: 2. Quantity per case: 1
MUR480E
Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5.3mm ) CASE267–05. VRRM: 800V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. MRI (max): 900uA. MRI (min): 25uA. Marking on the case: MUR480E. Equivalents: MUR480ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V. Number of terminals: 2. Quantity per case: 1
Set of 1
1.63$ VAT incl.
(1.51$ excl. VAT)
1.63$
Quantity in stock : 24
MUR6060

MUR6060

Forward current (AV): 60A. IFSM: 550A. Housing: TO-247. Housing (according to data sheet): TO-247AC....
MUR6060
Forward current (AV): 60A. IFSM: 550A. Housing: TO-247. Housing (according to data sheet): TO-247AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: SWITCHMODE Power Rectifiers. Marking on the case: MUR 6060. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. Number of terminals: 2. Used for: can also be used for solar panel systems. Note: Ultra Fast Recovery Diode
MUR6060
Forward current (AV): 60A. IFSM: 550A. Housing: TO-247. Housing (according to data sheet): TO-247AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: SWITCHMODE Power Rectifiers. Marking on the case: MUR 6060. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. Number of terminals: 2. Used for: can also be used for solar panel systems. Note: Ultra Fast Recovery Diode
Set of 1
6.14$ VAT incl.
(5.68$ excl. VAT)
6.14$
Quantity in stock : 35
MUR8100

MUR8100

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR8100
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1000V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Marking on the case: U8100E. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode
MUR8100
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1000V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Marking on the case: U8100E. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode
Set of 1
2.67$ VAT incl.
(2.47$ excl. VAT)
2.67$
Quantity in stock : 24
MUR820

MUR820

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR820
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Marking on the case: U820. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode
MUR820
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Marking on the case: U820. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode
Set of 1
1.37$ VAT incl.
(1.27$ excl. VAT)
1.37$
Quantity in stock : 705
MUR860

MUR860

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR860
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: MUR860. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. Number of terminals: 2. Quantity per case: 1. Function: rectifier diode for switching power supply. Spec info: ultra fast rectifier diode
MUR860
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: MUR860. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. Number of terminals: 2. Quantity per case: 1. Function: rectifier diode for switching power supply. Spec info: ultra fast rectifier diode
Set of 1
1.25$ VAT incl.
(1.16$ excl. VAT)
1.25$
Quantity in stock : 109
MUR860G

MUR860G

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR860G
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: U860. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. Number of terminals: 2. Quantity per case: 1. Spec info: ultra fast rectifier diode
MUR860G
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: U860. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. Number of terminals: 2. Quantity per case: 1. Spec info: ultra fast rectifier diode
Set of 1
2.24$ VAT incl.
(2.07$ excl. VAT)
2.24$
Quantity in stock : 42
MUR880

MUR880

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR880
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 800V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Marking on the case: U880E. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode
MUR880
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 800V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Marking on the case: U880E. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode
Set of 1
2.43$ VAT incl.
(2.25$ excl. VAT)
2.43$
Quantity in stock : 11956
MURS120T3G

MURS120T3G

Forward current (AV): 1A. IFSM: 40A. Housing: DO-214. Housing (according to data sheet): SMB DO-214A...
MURS120T3G
Forward current (AV): 1A. IFSM: 40A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 200V. Diode Tff(25°C): 25 ns. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. MRI (max): 50uA. MRI (min): 2uA. Marking on the case: U1D. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V. Number of terminals: 2. Note: screen printing/CMS code U1D
MURS120T3G
Forward current (AV): 1A. IFSM: 40A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 200V. Diode Tff(25°C): 25 ns. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. MRI (max): 50uA. MRI (min): 2uA. Marking on the case: U1D. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V. Number of terminals: 2. Note: screen printing/CMS code U1D
Set of 1
0.37$ VAT incl.
(0.34$ excl. VAT)
0.37$
Quantity in stock : 1907
MURS160T3G

MURS160T3G

Forward current (AV): 1A. IFSM: 35A. Housing: DO-214. Housing (according to data sheet): SMB DO-214A...
MURS160T3G
Forward current (AV): 1A. IFSM: 35A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 600V. Diode Tff(25°C): 50 ns. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. MRI (max): 150uA. MRI (min): 5uA. Marking on the case: U1J. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V. Number of terminals: 2. Note: screen printing/CMS code U1J
MURS160T3G
Forward current (AV): 1A. IFSM: 35A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 600V. Diode Tff(25°C): 50 ns. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. MRI (max): 150uA. MRI (min): 5uA. Marking on the case: U1J. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V. Number of terminals: 2. Note: screen printing/CMS code U1J
Set of 1
0.44$ VAT incl.
(0.41$ excl. VAT)
0.44$
Quantity in stock : 100
MURS320T3G

MURS320T3G

Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214A...
MURS320T3G
Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 200V. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. MRI (max): 150uA. MRI (min): 5uA. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V. Number of terminals: 2. Note: screen printing/CMS code U3D
MURS320T3G
Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 200V. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. MRI (max): 150uA. MRI (min): 5uA. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V. Number of terminals: 2. Note: screen printing/CMS code U3D
Set of 1
0.96$ VAT incl.
(0.89$ excl. VAT)
0.96$
Quantity in stock : 449
MURS360

MURS360

Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214A...
MURS360
Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S R6. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V. Number of terminals: 2. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J
MURS360
Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S R6. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V. Number of terminals: 2. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J
Set of 1
1.18$ VAT incl.
(1.09$ excl. VAT)
1.18$
Quantity in stock : 261
MURS360B

MURS360B

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMB DO-214...
MURS360B
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.6x3.95mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S, R6. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.88V. Number of terminals: 2. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J
MURS360B
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.6x3.95mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S, R6. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.88V. Number of terminals: 2. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J
Set of 1
0.81$ VAT incl.
(0.75$ excl. VAT)
0.81$
Quantity in stock : 834
P1000M

P1000M

Forward current (AV): 10A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5m...
P1000M
Forward current (AV): 10A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Cj: 70pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. MRI (min): 10uA. Marking on the case: P1000M. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.9V. Spec info: IFSM--800Ap t=10mS
P1000M
Forward current (AV): 10A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Cj: 70pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. MRI (min): 10uA. Marking on the case: P1000M. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.9V. Spec info: IFSM--800Ap t=10mS
Set of 1
1.45$ VAT incl.
(1.34$ excl. VAT)
1.45$
Quantity in stock : 1696
P2000M

P2000M

Forward current (AV): 20A. IFSM: 500A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5m...
P2000M
Forward current (AV): 20A. IFSM: 500A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Cj: 110pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. MRI (min): 10uA. Marking on the case: P2000M. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.87V. Spec info: IFSM--500Ap 50Hz(t=10ms), 550Ap 60Hz(t=8.3ms)
P2000M
Forward current (AV): 20A. IFSM: 500A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Cj: 110pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. MRI (min): 10uA. Marking on the case: P2000M. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.87V. Spec info: IFSM--500Ap 50Hz(t=10ms), 550Ap 60Hz(t=8.3ms)
Set of 1
1.93$ VAT incl.
(1.79$ excl. VAT)
1.93$
Quantity in stock : 497
P600K

P600K

Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 9x9mm )...
P600K
Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 9x9mm ). VRRM: 800V. Cj: 150pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: 6A08. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.9V. Spec info: IFSM--400Ap (t=8.3ms)
P600K
Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 9x9mm ). VRRM: 800V. Cj: 150pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: 6A08. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.9V. Spec info: IFSM--400Ap (t=8.3ms)
Set of 1
0.43$ VAT incl.
(0.40$ excl. VAT)
0.43$
Quantity in stock : 4714
P600M

P600M

RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: D8x7.5mm. Co...
P600M
RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: D8x7.5mm. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 6A. Ifsm [A]: 450A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 10uA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1V @ 5A. Housing (JEDEC standard): silicon. Switching speed (regeneration time) tr [sec.]: IFSM--400Ap (t=8.3ms). Housing (according to data sheet): R-6 ( 9.1x9.1mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V
P600M
RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: D8x7.5mm. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 6A. Ifsm [A]: 450A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 10uA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1V @ 5A. Housing (JEDEC standard): silicon. Switching speed (regeneration time) tr [sec.]: IFSM--400Ap (t=8.3ms). Housing (according to data sheet): R-6 ( 9.1x9.1mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V
Set of 1
0.40$ VAT incl.
(0.37$ excl. VAT)
0.40$
Quantity in stock : 134
P600S

P600S

Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm...
P600S
Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1200V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. MRI (min): 10uA. Marking on the case: 6A12. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V. Spec info: IFSM--360Ap (t=10ms), 400Ap (t=8.3ms)
P600S
Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1200V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. MRI (min): 10uA. Marking on the case: 6A12. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V. Spec info: IFSM--360Ap (t=10ms), 400Ap (t=8.3ms)
Set of 1
0.93$ VAT incl.
(0.86$ excl. VAT)
0.93$
Quantity in stock : 2656
PMEG6010CEJ

PMEG6010CEJ

Forward current (AV): 1A. IFSM: 10A. Housing: SOD-323. Housing (according to data sheet): SOD-323F. ...
PMEG6010CEJ
Forward current (AV): 1A. IFSM: 10A. Housing: SOD-323. Housing (according to data sheet): SOD-323F. VRRM: 60V. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Schottky rectifier diode (Mega series). Marking on the case: EQ. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.66V. Forward voltage Vf (min): 0.21V. Number of terminals: 2. Quantity per case: 1
PMEG6010CEJ
Forward current (AV): 1A. IFSM: 10A. Housing: SOD-323. Housing (according to data sheet): SOD-323F. VRRM: 60V. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Schottky rectifier diode (Mega series). Marking on the case: EQ. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.66V. Forward voltage Vf (min): 0.21V. Number of terminals: 2. Quantity per case: 1
Set of 1
0.34$ VAT incl.
(0.31$ excl. VAT)
0.34$
Quantity in stock : 39
PR1504

PR1504

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2....
PR1504
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.7x5.0mm ). VRRM: 400V. Cj: 20pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--50App, t=8.3mS
PR1504
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.7x5.0mm ). VRRM: 400V. Cj: 20pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--50App, t=8.3mS
Set of 1
1.79$ VAT incl.
(1.66$ excl. VAT)
1.79$
Out of stock
PS1010RS

PS1010RS

IFSM: 30A. VRRM: 1000V. Housing (according to data sheet): A-405 (5.2x2.7mm). Dielectric structure: ...
PS1010RS
IFSM: 30A. VRRM: 1000V. Housing (according to data sheet): A-405 (5.2x2.7mm). Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Number of terminals: 2. Quantity per case: 1
PS1010RS
IFSM: 30A. VRRM: 1000V. Housing (according to data sheet): A-405 (5.2x2.7mm). Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Number of terminals: 2. Quantity per case: 1
Set of 10
0.93$ VAT incl.
(0.86$ excl. VAT)
0.93$
Quantity in stock : 24
R2KY

R2KY

Note: DAEWOO TV...
R2KY
Note: DAEWOO TV
R2KY
Note: DAEWOO TV
Set of 1
1.39$ VAT incl.
(1.29$ excl. VAT)
1.39$
Quantity in stock : 12
R2M

R2M

Note: SONY TV...
R2M
Note: SONY TV
R2M
Note: SONY TV
Set of 1
1.56$ VAT incl.
(1.44$ excl. VAT)
1.56$
Quantity in stock : 47
RF2001T3D

RF2001T3D

Forward current (AV): 20A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220F...
RF2001T3D
Forward current (AV): 20A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. VRRM: 350V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. MRI (max): 10uA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.3V. Function: Fast switching, Fast recovery diode. Spec info: IFMS 100Ap
RF2001T3D
Forward current (AV): 20A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. VRRM: 350V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. MRI (max): 10uA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.3V. Function: Fast switching, Fast recovery diode. Spec info: IFMS 100Ap
Set of 1
2.56$ VAT incl.
(2.37$ excl. VAT)
2.56$

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