Standard and Rectifier Diodes

Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting

Forward current (AV): 2A. VRRM: 100V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm

Forward current (AV): 2A. VRRM: 200V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm

Forward current (AV): 3A. VRRM: 400V. Semiconductor material: silicon. Note: 125A/PP. Note: GI, S

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Semiconductor material: silicon. Note: GI, S. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting

Forward current (AV): 1A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.4x7.5mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--32169-301-670. Note: Samsung--CK6813Z/SEH. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Forward current (AV): 2.5A. IFSM: 50A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 6.5x8.0mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--0402-000266. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V

Forward current (AV): 15A. IFSM: 200A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 1200V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast Diode. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V

Forward current (AV): 30A. IFSM: 300A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Marking on the case: RHR30120. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (1 Phase, 60Hz). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V

Forward current (AV): 2A. IFSM: 70A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). VRRM: 1000V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Silicon Rectifier. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--70Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Forward current (AV): 3.5A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 5.2x8.0mm ). VRRM: 200V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultra-Fast Recovery Rectifier Diode. Pitch: 8x6.5mm. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 50V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 80A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247-2. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 125 ns. Semiconductor material: silicon. Function: Ultrafast Diode. MRI (max): 2mA. MRI (min): 250uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--500App 60Hz. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.7V

Forward current (AV): 16A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 40V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Note: dual silicon diode. Note: Ifsm 150A/10ms. Number of terminals: 3. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.48V

VRRM: 100V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.1V / 1A. Mounting Type: SMD. Reverse Leakage Current: <50uA / 100V. Reverse Recovery Time (Max): 1500ns. Series: S1

Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 1000V. Cj: 12pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.8us. Semiconductor material: silicon. Function: general purpose rectifier diodes. Note: screen printing/SMD code 1M. Note: housing 4.6x2.7mm. Marking on the case: 1 M. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Forward current (AV): 1.5A. VRRM: 200V. Semiconductor material: silicon

VRRM: 1000V. Average Rectified Current per Diode: 2A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.15V / 2A. Mounting Type: SMD. Reverse Leakage Current: <100uA / 1000V. Reverse Recovery Time (Max): 1500ns. Series: S2