Standard and Rectifier Diodes

Forward current (AV): 30A. IFSM: 275A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Cj: 700pF. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Note: SMPS DIODE. Note: dual silicon diode. Note: Ifsm--275A/8.3mS 60Hz. Number of terminals: 3. Spec info: Schottky rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

VRRM: 45V. Average Rectified Current per Diode: 25A. Diode type: schottky. Diode Configuration: independent. Mounting Type: THT. Information: 3rd Gen

Forward current (AV): 30A. IFSM: 300A. Housing: P-600. Housing (according to data sheet): P600 ( 8x7.5mm ). VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 10mA. MRI (min): 0.3mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--300Ap T=10mS 50Hz. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.42V. Forward voltage Vf (min): 0.25V

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 600V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. Note: GI, S. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V

Forward current (AV): 2A. IFSM: 75A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.5x7.5mm ). VRRM: 200V. Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--75App/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V

Forward current (AV): 2A. IFSM: 75A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.5x7.5mm ). VRRM: 400V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--75App/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.25V

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 300V. Semiconductor material: silicon. Note: SUPER FAST RECTIFIER. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 6A. IFSM: 150A. Housing: R-6. Housing (according to data sheet): R-6 (9.1x9.1mm). VRRM: 600V. Cj: 80pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: ultra fast rectifier diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 150Ap/8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V

Housing: DO213AA (MiniMELF). VRRM: 100V. Average Rectified Current per Diode: 1A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.82V / 1A. Mounting Type: SMD. Reverse Leakage Current: 500uA / 100V. Series: SGL

Housing: DO213AA (MiniMELF). VRRM: 40V. Average Rectified Current per Diode: 2A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.53V / 2A. Mounting Type: SMD. Reverse Leakage Current: 40uA / 40V. Information: 3rd Gen. Series: SGL

Housing: DO214AC (SMA). VRRM: 100V. Average Rectified Current per Diode: 1A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.85V / 1A. Mounting Type: SMD. Reverse Leakage Current: 500uA / 100V. Series: SK

Housing: DO214AC (SMA). VRRM: 50V. Average Rectified Current per Diode: 1A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.70V / 1A. Mounting Type: SMD. Reverse Leakage Current: 500uA / 40V. Series: SK

Housing: PCB soldering (SMD). Housing: SMB. Housing (JEDEC standard): DO-214AA. Forward current [A]: 2A. RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Configuration: surface-mounted component (SMD). Number of terminals: 2. Ifsm [A]: 55A. Forward voltage Vfmax (V): 0.85V @ 2A. Close voltage (repetitive) Vrrm [V]: 100V. Leakage current on closing Ir [A]: 500uA..10mA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Housing: DO214AA (SMB). VRRM: 40V. Average Rectified Current per Diode: 2A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.50V / 2A. Mounting Type: SMD. Reverse Leakage Current: 500uA / 40V. Series: SK

Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO-214AC ( 4.6x3.83mm ). VRRM: 40V. Semiconductor material: Sb. Note: screen printing/SMD code SK24A. MRI (max): 10mA. Marking on the case: SK24A. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Spec info: Vf 0.5V/2A, IFSM 50App 8.3ms. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V

Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO-214AC ( 4.6x3.83mm ). VRRM: 60V. Semiconductor material: Sb. Note: screen printing/SMD code SK24A. MRI (max): 10mA. Marking on the case: SK26A. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Spec info: Vf 0.5V/2A, IFSM 50App 8.3ms. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.7V. Forward voltage Vf (min): 0.7V

Housing: DO214AC (SMA). VRRM: 100V. Average Rectified Current per Diode: 3A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): 63.4k Ohms. Mounting Type: SMD. Reverse Leakage Current: 80uA / 100V. Series: SK

Housing: DO214AB (SMC). VRRM: 40V. Average Rectified Current per Diode: 3A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.50V / 3A. Mounting Type: SMD. Reverse Leakage Current: 500uA / 40V. Series: SK

Housing: DO214AB (SMC). VRRM: 60V. Average Rectified Current per Diode: 3A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.75V / 3A. Mounting Type: SMD. Reverse Leakage Current: 500uA / 60V. Series: SK

Housing: DO214AC (SMA). VRRM: 60V. Average Rectified Current per Diode: 3A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.55V / 3A. Mounting Type: SMD. Reverse Leakage Current: 50uA / 60V. Information: 3rd Gen. Series: SK

Forward current (AV): 5A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (SMC) 7.11x6.22mm. VRRM: 100V. Cj: 200pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky Barrier Rectifier Diode, Surface Mount. Other name: SK510C. MRI (max): 1mA. MRI (min): 100uA. Marking on the case: SK510. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (t=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.85V

Forward current (AV): 8A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB (7.2x5.8x2.2mm). VRRM: 40V. RoHS: yes. Semiconductor material: Sb. Note: screen printing/SMD code SK84. Marking on the case: SK84. Number of terminals: 2. Schottky diode?: schottky. Spec info: Ifsm 150App, Vf 0.5V/5A. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.5V

Housing: SOD123. VRRM: 40V. Average Rectified Current per Diode: 1A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.55V / 1A. Mounting Type: SMD. Reverse Leakage Current: 200uA / 40V. Series: SKL

Housing: SOD123. VRRM: 40V. Average Rectified Current per Diode: 3A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.50V / 3A. Mounting Type: SMD. Reverse Leakage Current: 200uA / 40V. Series: SKL

Forward current (AV): 165A. IFSM: 2500A. Housing: DO-205. Housing (according to data sheet): DO-205. VRRM: 1200V. Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: All-purpose power rectifier. Note: M12 thread, 8.2mm eyelet. Number of terminals: 1. Spec info: Threaded housing--Anode, (high current). Assembly/installation: Threaded fastening. Operating temperature: -40...+180°C. Threshold voltage Vf (max): 1.5V