Standard and Rectifier Diodes

Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1500V. Semiconductor material: silicon. Note: 4.2x4.3mm. Note: 50App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: rectifier diode. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (t=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.15V. Forward voltage Vf (min): 1.15V

Forward current (AV): 5A. IFSM: 180A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 7.2x5.8x2.2mm ). VRRM: 1000V. Cj: 80pF. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: 50/60 Hz Mains Rectification. MRI (max): 250uA. MRI (min): 10uA. Marking on the case: S5M. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 100V. Forward current (AV): 1A. IFSM: 40A. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--40Ap T=8.3mS

Housing: DO15. VRRM: 20V. Average Rectified Current per Diode: 1A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.50V / 1A. Mounting Type: THT. Reverse Leakage Current: 500uA / 20V. Series: SB1. MSL: n/a

Housing: DO15. VRRM: 30V. Average Rectified Current per Diode: 1A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.50V / 1A. Mounting Type: THT. Reverse Leakage Current: 500uA / 30V. Series: SB1. MSL: n/a

VRRM: 40V. Housing: DO15. Average Rectified Current per Diode: 1A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.50V / 1A. Mounting Type: THT. Reverse Leakage Current: 500uA / 40V. Series: SB1. MSL: n/a

Forward current (AV): 1A. IFSM: 40A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--40Ap T=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.7V. Forward voltage Vf (min): 0.7V

Forward current (AV): 1A. IFSM: 40A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--40Ap T=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V

Forward current (AV): 2A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 6.3x3.0mm ). VRRM: 100V. Semiconductor material: Sb. Note: Schottky rectifier diode. Note: IFSM--50Ap/10mS. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 0.79V

Forward current (AV): 2A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 6.3x3.0mm ). VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Note: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V

Forward current (AV): 2A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 6.3x3.0mm ). VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.7V. Forward voltage Vf (min): 0.7V

Forward current (AV): 15A. IFSM: 275A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Dual Schottky diode. Note: Total IF(AV) 2ch 30A. Number of terminals: 3. RoHS: yes. Spec info: Ifsm--275A t=8.3ms. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. IFSM: 100A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.5x7.5mm ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap 50Hz 8.2ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.79V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 4.5x7.5mm ). VRRM: 200V. Cj: 175pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 6mA. MRI (min): 0.001mA. Marking on the case: SB3200. Equivalents: Vishay--VSB3200. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap 50Hz 8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.68V

Forward current (AV): 3A. IFSM: 100A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.5x7.5mm ). VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap 50Hz 8.2ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.79V

VRRM: 100V. Housing: DO-201. Forward current (AV): 5A. IFSM: 125A. Housing (according to data sheet): DO-201AD. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 0.6mA. MRI (min): 0.5mA. Number of terminals: 2. Spec info: Ifsm 125Ap (t=10ms). Assembly/installation: PCB through-hole mounting

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 150V. Cj: 150pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 50mA. MRI (min): 8uA. Number of terminals: 2. RoHS: yes. Spec info: 125Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 0.92V. Forward voltage Vf (min): 0.92V

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 200V. Cj: 120pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 0.5mA. MRI (min): 0.1mA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.9V

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 50V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.67V. Forward voltage Vf (min): 0.67V

Housing: DO201. VRRM: 60V. Average Rectified Current per Diode: 5A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.55V / 5A. Mounting Type: THT. Reverse Leakage Current: 50uA / 60V. Information: 3rd Gen. Series: SB5. MSL: n/a

Housing: TO220. VRRM: 100V. Average Rectified Current per Diode: 10A. Diode type: schottky. Forward Voltage (Max): <0.85V / 10A. Mounting Type: THT. Reverse Leakage Current: 100uA / 100V. Series: SCBT20

Forward current (AV): 30A. IFSM: 275A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Cj: 700pF. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Note: SMPS DIODE. Note: dual silicon diode. Note: Ifsm--275A/8.3mS 60Hz. Number of terminals: 3. Spec info: Schottky rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

VRRM: 45V. Average Rectified Current per Diode: 25A. Diode type: schottky. Diode Configuration: independent. Mounting Type: THT. Information: 3rd Gen