Standard and Rectifier Diodes

Forward current (AV): 8A. Housing: TO-220. Housing (according to data sheet): TO-220. VRRM: 200V. Double: Double. Semiconductor material: silicon. Note: ->l<-. Note: ULTRA FAST. Note: Ifsm--80A10mS. Assembly/installation: PCB through-hole mounting

Housing: PCB soldering (SMD). Housing: SMA. Housing (JEDEC standard): DO-214AC. Forward current [A]: 1A. RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Configuration: surface-mounted component (SMD). Number of terminals: 2. Ifsm [A]: 75A. Forward voltage Vfmax (V): 0.26V @ 1A. Close voltage (repetitive) Vrrm [V]: 30 v. Leakage current on closing Ir [A]: 6mA...15mA. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

Forward current (AV): 10A/diode. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 45V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Note: dual silicon diode. Note: Schottky rectifier diode. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: total 20A, IFSM 180App (t=10ms). Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 0.65V. Forward voltage Vf (min): 0.72V

Forward current (AV): 20A. IFSM: 250A. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. VRRM: 100V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: High Voltage Power Schottky Rectifier. Note: IFSM--250Ap. MRI (max): 2mA. MRI (min): 4.5uA. Number of terminals: 3. RoHS: yes. Spec info: insulation voltage 2000VDC, capacitance 45pF. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.67V. Forward voltage Vf (min): 0.56V

Forward current (AV): 10A. IFSM: 250A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 100V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: silicon. Function: High Voltage Power Schottky Rectifier. Note: Schottky rectifier diode. MRI (max): 6mA. MRI (min): 4.5uA. Number of terminals: 3. RoHS: yes. Spec info: IFSM--250App, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.67V. Forward voltage Vf (min): 0.56V

Forward current (AV): 2A. Forward current (RMS): 10A. IFSM: 50A / 10mS. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 100V. Semiconductor material: Sb. Function: 'High Voltage Power Schottky'. MRI (max): 5mA. MRI (min): 1uA. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 0.92V. Forward voltage Vf (min): 0.65V

RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Housing: PCB soldering (SMD). Housing: SMA. Housing (JEDEC standard): DO-214AC. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 2A. Ifsm [A]: 75A. Forward voltage Vfmax (V): 0.375V @ 2A. Close voltage (repetitive) Vrrm [V]: 30 v. Leakage current on closing Ir [A]: 200uA..15mA. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Switching speed (regeneration time) tr [sec.]: +150°C. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AA ( 4.6x2.9mm ). Threshold voltage Vf (max): 0.43V. Forward voltage Vf (min): 0.325V. VRRM: 30 v

Forward current (AV): 2A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.6x3.95mm ). VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: power Schottky rectifier diode. low voltage drop. Note: screen printing/SMD code GD4. MRI (max): 80mA. MRI (min): 220uA. Marking on the case: GD4. Number of terminals: 2. Temperature: +150°C. RoHS: yes. Spec info: IFSM--75Ap (tp =10ms). Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 0.39V. Forward voltage Vf (min): 0.25V

Forward current (AV): 30A. IFSM: 220A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 45V. Quantity per case: 2. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Dual Schottky diode. MRI (max): 11mA. MRI (min): 200uA. Number of terminals: 3. RoHS: yes. Spec info: IFSM--220Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.84V. Forward voltage Vf (min): 0.5V

Forward current (AV): 15A. IFSM: 250A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 100V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: silicon. Function: High Voltage Power Schottky Rectifier. Note: Schottky rectifier diode. MRI (max): 6mA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Spec info: IFSM--250App, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.74V. Forward voltage Vf (min): 0.64V

Forward current (AV): 5A. IFSM: 75A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252A ( Dpak ). VRRM: 100V. Semiconductor material: Sb. Function: 'High Voltage Power Schottky'. MRI (max): 4.5mA. MRI (min): 3.5uA. Marking on the case: S5H100. RoHS: yes. Schottky diode?: schottky. Spec info: 75App/10ms. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.57V

Forward current (AV): 5A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 40V. Semiconductor material: Sb. Function: Power Schottky Rectifier. MRI (max): 0.75mA. MRI (min): 0.2mA. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Spec info: 150App / 10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.38V

Forward current (AV): 30A. IFSM: 270A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 170V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: silicon. Function: High Voltage Power Schottky Rectifier. Note: IF(AV) 30A/diode, 60A/total. Note: Schottky rectifier diode. Number of terminals: 3. RoHS: yes. Spec info: IFSM--270App, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.97V

Forward current (AV): 8A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 100V. Semiconductor material: Sb. Note: 'High Voltage Power Schottky'. Note: 250App/10ms. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting

Forward current (AV): 12A. IFSM: 110A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 28 ns. Semiconductor material: silicon. Function: ultra-fast high voltage rectifier diode. Number of terminals: 2. Temperature: +150°C. RoHS: yes. Spec info: Ifsm 110App/10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.25V

Forward current (AV): 5A. IFSM: 55A. Housing: TO-220FP. Housing (according to data sheet): ISOWATT TO-220AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: Ultra-fast diode. MRI (max): 0.75mA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--55Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -...+150°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.25V

Forward current (AV): 5A. IFSM: 45A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 45 ns. Semiconductor material: silicon. Function: Ultra-fast Diode, High Voltage. MRI (max): 0.3mA. MRI (min): 100uA. Number of terminals: 2. Temperature: +150°C. Spec info: IFSM--45Ap. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2.2V. Forward voltage Vf (min): 1.35V

Forward current (AV): 12A. IFSM: 80A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1000V. RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 48 ns. Semiconductor material: silicon. Function: Ultrafast recovery - high voltage diode. Marking on the case: STTH1210D. Number of terminals: 2. Temperature: +175°C. Spec info: IFSM--80Ap T=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.3V

VRRM: 600V. Forward current (AV): 12A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. RoHS: yes. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.4V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ultra-fast high voltage rectifier diode. MRI (max): 45uA. Number of terminals: 2. Temperature: +175°C. Spec info: Ifsm 100App tp=10ms. Assembly/installation: PCB through-hole mounting

VRRM: 600V. Forward current (AV): 12A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC isolated. RoHS: yes. Threshold voltage Vf (max): 2.9V. Forward voltage Vf (min): 1.4V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast high voltage rectifier. Marking on the case: STTH12R06DI. Number of terminals: 3. Temperature: +175°C. Spec info: Ifsm 100Ap t=10ms. Assembly/installation: PCB through-hole mounting

Forward current (AV): 2x100A. IFSM: 100A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP. VRRM: 300V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Function: Dual Ultrafast high voltage rectifier diode. MRI (max): 2mA. MRI (min): 200uA. Number of terminals: 4. RoHS: yes. Spec info: IFSM--diode/100Ap t=10ms, TVJ=150°C. Assembly/installation: screw. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 0.8V

Forward current (AV): 10A. IFSM: 110A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 300V. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. MRI (max): 300uA. MRI (min): 30uA. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Spec info: Ifsm 110A t=10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.85V

Forward current (AV): 10A. IFSM: 110A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). VRRM: 300V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. MRI (max): 300uA. MRI (min): 30uA. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Spec info: Ifsm 110A t=10ms. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.85V

Forward current (AV): 10A. IFSM: 110A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 300V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. MRI (max): 300uA. MRI (min): 20uA. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Spec info: Ifsm 110A t=10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.85V

Forward current (AV): 2A. IFSM: 40A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: AXIAL TURBO 2 DIODE. Production date: 201506. MRI (max): 12uA. MRI (min): 2uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--40App, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V