Standard and Rectifier Diodes

Housing: DO-247. Housing (according to data sheet): DO-247. Note: 2500V insulation. Note: high voltage diode, ultra-fast recovery. Note: 300Ap/5ms, 180Ap/10ms

Forward current (AV): 15A. IFSM: 60.4k Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263. VRRM: 300V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: high efficiency ultrafast diode. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Spec info: Ifsm 120Ap tp=10ms. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.1V

Forward current (AV): 15A. IFSM: 60.4k Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. VRRM: 600V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ultra-fast high voltage rectifier diode. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Spec info: Ifsm 120Ap t=10mS. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.1V

Forward current (AV): 30A. IFSM: 300A. Housing: TO-247. Housing (according to data sheet): TO-247. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: ultra-fast high voltage rectifier diode. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Spec info: IFSM--300Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.1V

Forward current (AV): 60A. IFSM: 330A. Housing: TO-247. Housing (according to data sheet): TO-247. VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 22 ns. Semiconductor material: silicon. Function: high efficiency ultrafast diode. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Spec info: Ifsm--330Ap t=10mS. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.75V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220FPAC. VRRM: 200V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diodes (min 17ns, max 30ns). Marking on the case: STTH802. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.8V

Forward current (AV): 1A. IFSM: 27A. Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). VRRM: 200V. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: IFSM--27Ap. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Forward current (AV): 1A. IFSM: 27A. Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). VRRM: 400V. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: IFSM--27Ap. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.25V

Forward current (AV): 1A. IFSM: 27A. Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). VRRM: 1000V. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: IFSM--27Ap. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V

VRRM: 30V. Average Rectified Current per Diode: 0.2A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <1V / 0.2A. Mounting Type: SMD. Reverse Leakage Current: 500nA / 25V. Reverse Recovery Time (Max): 5ns. Series: BAT

VRRM: 40V. Average Rectified Current per Diode: 0.35A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.75V / 0.2A. Mounting Type: SMD. Reverse Leakage Current: 25uA / 40V. Reverse Recovery Time (Max): 10ns. Series: BAT

VRRM: 100V. Average Rectified Current per Diode: 0.15A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.45V / 0.01A. Mounting Type: SMD. Reverse Leakage Current: 5uA / 75V. Series: BAT

Housing: SMD 0603. VRRM: 75V. Average Rectified Current per Diode: 0.1A. Diode type: Switching. Diode Configuration: independent. Forward Voltage (Max): <1.0V / 0.01A. Mounting Type: SMD. Reverse Recovery Time (Max): 4ns. Series: TS4148

Housing: SMD 1206. VRRM: 75V. Average Rectified Current per Diode: 0.15A. Diode type: Switching. Diode Configuration: independent. Forward Voltage (Max): <1.0V / 0.1A. Mounting Type: SMD. Reverse Leakage Current: 25nA / 20V. Reverse Recovery Time (Max): 4ns. Series: TS4148

Housing: PCB soldering (SMD). Housing: 063. Forward current [A]: 0.1A. RoHS: yes. Component family: Small-signal diode. Surface mount (SMD). Configuration: surface-mounted component (SMD). Number of terminals: 2. Ifsm [A]: 2A. Forward voltage Vfmax (V): 1V @ 100mA. Close voltage (repetitive) Vrrm [V]: 75V. Leakage current on closing Ir [A]: 5uA. Switching speed (regeneration time) tr [sec.]: 4 ns. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Housing: SMD 0805. Forward current (AV): 150mA. IFSM: 500mA. VRRM: 100V. RoHS: yes. Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed diodes. Other name: IN4148. MRI (max): 50uA. MRI (min): 25nA. Number of terminals: 2. Spec info: Ifsm--1us 4A, 1ms 1A, 1s 0.5A. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Forward current (AV): 3A. IFSM: 50A. Housing: SOD-123. Housing (according to data sheet): SOD123W SMA (2.9x1.9mm). VRRM: 45V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode with low forward voltage. Surface mount (SMD). MRI (max): 1mA. Marking on the case: W3U45. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (tp=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.47V. Forward voltage Vf (min): 0.33V

Forward current (AV): 3A. IFSM: 50A. Housing: SOD-123. Housing (according to data sheet): SOD123W SMA (2.9x1.9mm). VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode with low forward voltage. Surface mount (SMD). MRI (max): 1mA. Marking on the case: W3U60. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (tp=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.58V. Forward voltage Vf (min): 0.39V

Forward current (AV): 0.6A. VRRM: 600V. Semiconductor material: silicon

Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 800V. Semiconductor material: silicon. Note: GI-S. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). VRRM: 100V. Semiconductor material: silicon. Note: GI-S. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). VRRM: 400V. Semiconductor material: silicon. Note: GI-S. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). VRRM: 600V. Cj: 50pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultra fast switching. Number of terminals: 2. Spec info: Ifsm 150Ap t=8.2ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V

Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Semiconductor material: silicon. Note: GI-S. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 600V. Semiconductor material: silicon. Note: GI-S. Number of terminals: 2. Assembly/installation: PCB through-hole mounting