Standard and Rectifier Diodes

Forward current (AV): 20mA. IFSM: 500mA. Housing (according to data sheet): 3x12mm. VRRM: 16000V. Cj: 1.8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. MRI (min): 5uA. Number of terminals: 2. Dimensions: 3x12mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 40V

Forward current (AV): 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 1500V. Semiconductor material: silicon. Note: Ultrahigh-Definition Display Applications. Note: 50App/10ms, Silicon Diffused Junction Type. Assembly/installation: PCB through-hole mounting

Forward current (AV): 20A. IFSM: 180A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263. VRRM: 300V. Cj: 90pF. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: high efficiency ultrafast diode. Marking on the case: 20LC30. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Spec info: IFSM--180Ap (1cycle). Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1V

Forward current (AV): 3A. IFSM: 100A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1500V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20us. Semiconductor material: silicon. Function: DIODE-RECTIFIER. MRI (max): 100uA. MRI (min): 5uA. Marking on the case: DGP30L. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V

Housing: TO-220. Housing (according to data sheet): T0-220FPAB. VRRM: 1500V. Double: Double. Semiconductor material: silicon. Note: dual silicon diode. Note: DAMPER +MODULATION. Assembly/installation: PCB through-hole mounting

Housing: TO-220. Housing (according to data sheet): T0-220AB. VRRM: 1500V. Double: Double. Semiconductor material: silicon. Note: dual silicon diode. Note: DAMPER +MODULATION. Assembly/installation: PCB through-hole mounting

Forward current (AV): 14A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 62W. RoHS: yes. Spec info: 100Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.5V

Forward current (AV): 11A. IFSM: 75A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 78W. RoHS: yes. Spec info: 75Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.6V. Forward voltage Vf (min): 2.2A

Forward current (AV): 100A. IFSM: 600A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. MRI (max): 20mA. MRI (min): 1.5mA. Number of terminals: 2. Pd (Power Dissipation, Max): 357W. RoHS: yes. Spec info: 540Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode (FRED)'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.55V

Forward current (AV): 2x96A. IFSM: 1200A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 600V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: dual fast recovery diode. MRI (max): 20mA. MRI (min): 1mA. Number of terminals: 4. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: 1200Ap t=10ms, TVJ=45°C, 1080Ap t=10ms, TVJ=150°C. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.17V

Forward current (AV): 2x91A. IFSM: 900A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: dual fast recovery diode. Note: epitaxial diode, high current. Note: 900App/10ms, 45°C. MRI (max): 15mA. MRI (min): 1.5mA. Pd (Power Dissipation, Max): 250W. Spec info: 810Ap t=10ms, TVJ=150°C. Delivery time: KB. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.87V. Forward voltage Vf (min): 1.61V

Forward current (AV): 37A. IFSM: 375A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 600V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: 375Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.4V

Forward current (AV): 37A. IFSM: 375A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1000V. RoHS: yes. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 138W. Spec info: 375Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.4V. Forward voltage Vf (min): 2V

Forward current (AV): 28A. IFSM: 200A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 138W. RoHS: yes. Spec info: 375Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.55V. Forward voltage Vf (min): 2.2V

Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 600V. Forward current (AV): 60A. IFSM: 550A. RoHS: yes. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 166W. Spec info: 480Ap t=10ms, TVJ=150°C. Weight: 5.6g. Assembly/installation: PCB through-hole mounting

Forward current (AV): 60A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1000V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 189W. RoHS: yes. Spec info: 450Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.3V. Forward voltage Vf (min): 1.8V

Forward current (AV): 52A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 189W. RoHS: yes. Spec info: 450Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.55V. Forward voltage Vf (min): 2V

Forward current (AV): 30A. IFSM: 300A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 600V. Cj: yes. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Double: yes. Semiconductor material: silicon. Function: 'Fast Recovery'. MRI (max): 100uA. MRI (min): 50uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: Ifsm--375Ap Tp--10uS. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode (FRED)'. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.4V

Forward current (AV): 15A. IFSM: 90A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 0.5mA. MRI (min): 100uA. Number of terminals: 2. Pd (Power Dissipation, Max): 95W. RoHS: yes. Spec info: 90Ap t=10ms, TVJ=45°C. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.75V. Forward voltage Vf (min): 1.79V

Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Forward current (AV): 30A. IFSM: 200A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.74V. Forward voltage Vf (min): 1.78V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 1mA. MRI (min): 250uA. Number of terminals: 2. Pd (Power Dissipation, Max): 165W. Spec info: 200Ap t=10ms, TVJ=45°C

Forward current (AV): 70A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 2.5mA. MRI (min): 650uA. Number of terminals: 2. Pd (Power Dissipation, Max): 190W. RoHS: yes. Spec info: 500Ap t=10ms, TVJ=45°C. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.66V. Forward voltage Vf (min): 1.74V

Forward current (AV): 60A. IFSM: 500A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 2.5mA. MRI (min): 650uA. Configuration: insulated housing, without drilling. Number of terminals: 2. Pd (Power Dissipation, Max): 190W. RoHS: yes. Spec info: 540Ap t=10ms, TVJ=45°C. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.66V. Forward voltage Vf (min): 1.74V

Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1600V. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: silicon. Function: Standard Rectifier. Number of terminals: 3. RoHS: yes. Spec info: central leg (cathode D1, anode D2, in series). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.16V

Forward current (AV): 6A. Forward current (RMS): 15A. IFSM: 80A (tp=10ms). Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1500V. Trr Diode (Min.): 75 ns. Various: High Voltage Damper Diode. Semiconductor material: silicon. Function: CRT Horizontal Deflection. MRI (max): 1mA. MRI (min): 100uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2.3V. Forward voltage Vf (min): 1.5V

Forward current (AV): 15A. Housing: TO-220FP. Housing (according to data sheet): TO-220FPAC. VRRM: 1500V. Semiconductor material: silicon. Note: IF(AV) 4A, Vf typ 1.5V. Note: High Voltage Damper Diode. Assembly/installation: PCB through-hole mounting