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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 19A, 30A, 100uA, 0.03 Ohms, TO-220, TO-220AC, 50V - BUZ11

N-channel transistor, 19A, 30A, 100uA, 0.03 Ohms, TO-220, TO-220AC, 50V - BUZ11
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Quantity excl. VAT VAT incl.
1 - 4 2.17$ 2.35$
5 - 9 2.06$ 2.23$
10 - 24 1.95$ 2.11$
25 - 49 1.84$ 1.99$
50 - 99 1.80$ 1.95$
100 - 249 1.76$ 1.90$
250 - 1704 2.33$ 2.52$
Quantity U.P
1 - 4 2.17$ 2.35$
5 - 9 2.06$ 2.23$
10 - 24 1.95$ 2.11$
25 - 49 1.84$ 1.99$
50 - 99 1.80$ 1.95$
100 - 249 1.76$ 1.90$
250 - 1704 2.33$ 2.52$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1704
Set of 1

N-channel transistor, 19A, 30A, 100uA, 0.03 Ohms, TO-220, TO-220AC, 50V - BUZ11. N-channel transistor, 19A, 30A, 100uA, 0.03 Ohms, TO-220, TO-220AC, 50V. ID (T=100°C): 19A. ID (T=25°C): 30A. Idss (max): 100uA. On-resistance Rds On: 0.03 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AC. Voltage Vds(max): 50V. C(in): 1500pF. Cost): 750pF. Channel type: N. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Id(imp): 60.4k Ohms. IDss (min): 20uA. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 180 ns. Td(on): 30 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 22:25.

Technical documentation

Equivalent products :

Quantity in stock : 301
IRF540N

IRF540N

N-channel transistor, 23A, 33A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 23A. ID (T...
IRF540N
N-channel transistor, 23A, 33A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.044 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1960pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. IDss (min): 25uA. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
IRF540N
N-channel transistor, 23A, 33A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.044 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1960pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. IDss (min): 25uA. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
2.19$ VAT incl.
(2.03$ excl. VAT)
2.19$

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